MAX1725/MAX1726 12V, Ultra-Low I , Low-Dropout Linear Regulators
... 2µA supply current throughout their entire operating range and in dropout. Despite their ultra-low power consumption, the MAX1725/MAX1726 have tight output accuracy (1.5%) and require just 1µF output capacitance to achieve good load-transient response. These regulators have a wide input voltage rang ...
... 2µA supply current throughout their entire operating range and in dropout. Despite their ultra-low power consumption, the MAX1725/MAX1726 have tight output accuracy (1.5%) and require just 1µF output capacitance to achieve good load-transient response. These regulators have a wide input voltage rang ...
Manual - HP Archive
... Assume the output level h a s been set with R19 and s o m e change h a s occurred which causes the output voltage to rise. The voltage at the base of 43 is that which would appear across a forward biased diode and is essentially constant. The electron current flow through R20 is constant. When the o ...
... Assume the output level h a s been set with R19 and s o m e change h a s occurred which causes the output voltage to rise. The voltage at the base of 43 is that which would appear across a forward biased diode and is essentially constant. The electron current flow through R20 is constant. When the o ...
how diodes work - Wiki - Joe Knows Electronics
... A PIN diode can also be used as a photodetector. When a PIN diode is reversebiased well below the reverse breakdown voltage, there is only a very tiny current flow, called a dark current. If a photon is absorbed by the silicon in the intrinsic layer, it frees a charge carrier from the silicon. This ...
... A PIN diode can also be used as a photodetector. When a PIN diode is reversebiased well below the reverse breakdown voltage, there is only a very tiny current flow, called a dark current. If a photon is absorbed by the silicon in the intrinsic layer, it frees a charge carrier from the silicon. This ...
Circuit Elements
... When the charges are separated and stationary we call this static electricity. The charging of a capacitor is an example. The separation of charge between clouds and the earth before a lighting discharge is a static electricity. When the charges are in motion (changing with time relative to one anot ...
... When the charges are separated and stationary we call this static electricity. The charging of a capacitor is an example. The separation of charge between clouds and the earth before a lighting discharge is a static electricity. When the charges are in motion (changing with time relative to one anot ...
Peak Power Tracking Control for Photovoltaic Array
... Simulation results from : “Energy Comparison of Seven MPPT Techniques for PV Systems” A. Dolara, R. Faranda, S. Leva, J. Electromagnetic Analysis & ...
... Simulation results from : “Energy Comparison of Seven MPPT Techniques for PV Systems” A. Dolara, R. Faranda, S. Leva, J. Electromagnetic Analysis & ...
1 - LIGO dcc
... M11 and M14 reduces to 2VDC, which is well below threshold. R28 will have ~1mA flowing through it when no pulse is commanded. This results in a power dissipation of ~0.4W, so R28 is sized as a 1 watt part. R28 must also be able to operate at 500V, so a suitable high voltage resistor was chosen. c. R ...
... M11 and M14 reduces to 2VDC, which is well below threshold. R28 will have ~1mA flowing through it when no pulse is commanded. This results in a power dissipation of ~0.4W, so R28 is sized as a 1 watt part. R28 must also be able to operate at 500V, so a suitable high voltage resistor was chosen. c. R ...
Terahertz Detector Utilizing Two-dimensional Electronic Fluid
... rather than a 2D-electron gas (2DEG) [3], [4]. This electronic fluid is described by the same equations as water in a shallow channel. Wave propagation in the electronic fluid can be used as the basis for a new generation of millimeter and submillimeter-wave devices—a FET emitting far infrared radia ...
... rather than a 2D-electron gas (2DEG) [3], [4]. This electronic fluid is described by the same equations as water in a shallow channel. Wave propagation in the electronic fluid can be used as the basis for a new generation of millimeter and submillimeter-wave devices—a FET emitting far infrared radia ...
Theory of Alternating Currents
... electric current is fundamentally the same in all cases, but the manner in which it varies with time may be very different. This is shown by the graph of the current plotted against time as a base, and a number of examples are illustrated in the picture. (a) represents a steady direct current (D.C.) ...
... electric current is fundamentally the same in all cases, but the manner in which it varies with time may be very different. This is shown by the graph of the current plotted against time as a base, and a number of examples are illustrated in the picture. (a) represents a steady direct current (D.C.) ...
Introduction to Basic Electronic Components. Test and Measurement
... To test whether a given diode is O.K. or not, a simple multimter test can be performed which is given later in this unit. Light Emitting Diode (LED) Led’sare pn junction devices which emit light radiation when biased in the forward direction. The semiconductor material used for these junctions is a ...
... To test whether a given diode is O.K. or not, a simple multimter test can be performed which is given later in this unit. Light Emitting Diode (LED) Led’sare pn junction devices which emit light radiation when biased in the forward direction. The semiconductor material used for these junctions is a ...
Power Optimization for Ripple Carry Adder with Reduced
... voltage deterioration caused by threshold drop can be extensively reduced by increasing the aspect ratio of the pass transistor [4]. XOR gates are main building block of full adders. Performance of the adder can be improved by enhancing the performance of XOR gates used in it. A survey of collected ...
... voltage deterioration caused by threshold drop can be extensively reduced by increasing the aspect ratio of the pass transistor [4]. XOR gates are main building block of full adders. Performance of the adder can be improved by enhancing the performance of XOR gates used in it. A survey of collected ...
7. Signal Conditioning in Oscilloscopes and the
... shows one way in which these and the many additional requirements of Figure 7-1 can be met (Rush 1986). A silicon field effect transistor (FET) acting as a source follower is the only type of commercially available device suitable for implementing the impedance converter. For 500MHz instruments, we ...
... shows one way in which these and the many additional requirements of Figure 7-1 can be met (Rush 1986). A silicon field effect transistor (FET) acting as a source follower is the only type of commercially available device suitable for implementing the impedance converter. For 500MHz instruments, we ...
MOD IV
... full-bridge topologies. Half-bridges have the maximum a.c. voltage limited to half the value of the full d.c. source voltage and may need a centre tapped source. Full-bridges have the full d.c. source voltage as the maximum a.c. voltage. Where the d.c. source voltage is low, e.g. 12V or 24V, the vol ...
... full-bridge topologies. Half-bridges have the maximum a.c. voltage limited to half the value of the full d.c. source voltage and may need a centre tapped source. Full-bridges have the full d.c. source voltage as the maximum a.c. voltage. Where the d.c. source voltage is low, e.g. 12V or 24V, the vol ...
A 40 meters CW QRP Transceiver
... The XTAL filter A particular care was dedicated to the filter design, in fact I wanted to obtain a device suited also for SSB reception. I chose a ladder 4 poles design, employing some cheap 4.433 MHz crystals for TV use. In this manner I obtained a 1.8 KHz bandpass, an acceptable compromise to rece ...
... The XTAL filter A particular care was dedicated to the filter design, in fact I wanted to obtain a device suited also for SSB reception. I chose a ladder 4 poles design, employing some cheap 4.433 MHz crystals for TV use. In this manner I obtained a 1.8 KHz bandpass, an acceptable compromise to rece ...
ISSCC 2007 / SESSION 30 / BUILDING BLOCKS FOR HIGH
... broadband communication circuits. This paper focuses on the implementation of broadband amplifiers; the fundamental building blocks of high data-rate optical telecommunication systems in CMOS technology. Distributed amplification is widely used as a circuit topology for achieving a flat gain and goo ...
... broadband communication circuits. This paper focuses on the implementation of broadband amplifiers; the fundamental building blocks of high data-rate optical telecommunication systems in CMOS technology. Distributed amplification is widely used as a circuit topology for achieving a flat gain and goo ...
A 2.4-ghz 0.18-/spl mu/m cmos self-biased cascode power amplifier
... with its standard device which has a typical of 50 GHz. The thick-oxide device basically provides a lower gain at RF. In a cascode combination of thick and standard devices, the thick device limits the high-frequency performance. In other words, even though we use a more advanced technology (0.2- m ...
... with its standard device which has a typical of 50 GHz. The thick-oxide device basically provides a lower gain at RF. In a cascode combination of thick and standard devices, the thick device limits the high-frequency performance. In other words, even though we use a more advanced technology (0.2- m ...
MTP40N10E Power MOSFET 40 Amps, 100 Volts
... controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied v ...
... controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied v ...
SIMetrix 5.4 quick start
... raise to a power, ABS, ATAN, SIN, COS, TAN, LOG (equals LOG10), LN and SQRT (SQRT: negative values allowed and handled as positive values). Also constants can be added and expressions containing PI. A gain-limiter expression for voltage gain is 1000 and output saturation or clip level at –1 and +1 i ...
... raise to a power, ABS, ATAN, SIN, COS, TAN, LOG (equals LOG10), LN and SQRT (SQRT: negative values allowed and handled as positive values). Also constants can be added and expressions containing PI. A gain-limiter expression for voltage gain is 1000 and output saturation or clip level at –1 and +1 i ...
2PD2150 1. Product profile 20 V, 3 A NPN low V
... limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in me ...
... limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in me ...
Design of Analog Circuits in 28nm CMOS Technology for Physics
... With the arrival of nanoscale (sub-100nm) CMOS technologies, digital performance improve further, but many new challenges have been introduced for analog designers. In fact, for the digital circuits CMOS scaling-down leads to several benefits: speed improvement, reduced power consumption, high integ ...
... With the arrival of nanoscale (sub-100nm) CMOS technologies, digital performance improve further, but many new challenges have been introduced for analog designers. In fact, for the digital circuits CMOS scaling-down leads to several benefits: speed improvement, reduced power consumption, high integ ...
LT1585(A)-1.5 - Linear Technology
... The LT1585-1.5/LT1585A-1.5 protect the device under overload conditions with internal power and thermal limiting circuitry. However, for normal continuous load conditions, do not exceed maximum junction temperature ratings. It is important to consider all sources of thermal resistance from junction- ...
... The LT1585-1.5/LT1585A-1.5 protect the device under overload conditions with internal power and thermal limiting circuitry. However, for normal continuous load conditions, do not exceed maximum junction temperature ratings. It is important to consider all sources of thermal resistance from junction- ...
Buck Boost Converter Seminar.pdf
... the duty cycle of the switching transistor. One possible drawback of this converter is that the switch does not have a terminal at ground; this complicates the driving circuitry. Also, the polarity of the output voltage is opposite the input voltage. Neither drawback is of any consequence if the pow ...
... the duty cycle of the switching transistor. One possible drawback of this converter is that the switch does not have a terminal at ground; this complicates the driving circuitry. Also, the polarity of the output voltage is opposite the input voltage. Neither drawback is of any consequence if the pow ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.