SIGC156T120R2CQ
... Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infi ...
... Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infi ...
Solar Power DC
... •Solar cell current depends on area and light intensity. As an effect its important to control current in an application. •This can be done either by limiting current to a certain value or controlling power circuit to operate in most efficient manner. •This is accomplished by keeping I/p voltage to ...
... •Solar cell current depends on area and light intensity. As an effect its important to control current in an application. •This can be done either by limiting current to a certain value or controlling power circuit to operate in most efficient manner. •This is accomplished by keeping I/p voltage to ...
lab sheet - Faculty of Engineering
... megahertz range. The frequencies between 1MHz to 300MHz are collectively known as radio frequency (RF). Frequencies higher than 300MHz are categorized as microwave frequency (MF). An RF amplifier is an amplifier that would work well into the radio frequency region. RF amplifier is difficult to desig ...
... megahertz range. The frequencies between 1MHz to 300MHz are collectively known as radio frequency (RF). Frequencies higher than 300MHz are categorized as microwave frequency (MF). An RF amplifier is an amplifier that would work well into the radio frequency region. RF amplifier is difficult to desig ...
lab sheet - Faculty of Engineering
... megahertz range. The frequencies between 1MHz to 300MHz are collectively known as radio frequency (RF). Frequencies higher than 300MHz are categorized as microwave frequency (MF). An RF amplifier is an amplifier that would work well into the radio frequency region. RF amplifier is difficult to desig ...
... megahertz range. The frequencies between 1MHz to 300MHz are collectively known as radio frequency (RF). Frequencies higher than 300MHz are categorized as microwave frequency (MF). An RF amplifier is an amplifier that would work well into the radio frequency region. RF amplifier is difficult to desig ...
lab sheet - Faculty of Engineering
... megahertz range. The frequencies between 1MHz to 300MHz are collectively known as radio frequency (RF). Frequencies higher than 300MHz are categorized as microwave frequency (MF). An RF amplifier is an amplifier that would work well into the radio frequency region. RF amplifier is difficult to desig ...
... megahertz range. The frequencies between 1MHz to 300MHz are collectively known as radio frequency (RF). Frequencies higher than 300MHz are categorized as microwave frequency (MF). An RF amplifier is an amplifier that would work well into the radio frequency region. RF amplifier is difficult to desig ...
Sep 2003 Low Voltage Amplifiers Give Choice of Accuracy or Speed
... When the adapter input falls, so that the system bus voltage requirements can no longer be met, the LTC1980 switches to the regulator mode. In this mode the LTC1980 no longer functions as a battery charger. It instead acts as a battery discharger. Power flows “backwards” from the battery to the line ...
... When the adapter input falls, so that the system bus voltage requirements can no longer be met, the LTC1980 switches to the regulator mode. In this mode the LTC1980 no longer functions as a battery charger. It instead acts as a battery discharger. Power flows “backwards” from the battery to the line ...
Chapter 20
... FETs are widely used in both analogue and digital circuits They have high input resistance and small physical size There are two basic forms of FET: MOSFETs and JFETs MOSFETs may be divided into DE and Enhancement types In each case the gate voltage controls the current from the drain to the source ...
... FETs are widely used in both analogue and digital circuits They have high input resistance and small physical size There are two basic forms of FET: MOSFETs and JFETs MOSFETs may be divided into DE and Enhancement types In each case the gate voltage controls the current from the drain to the source ...
DLD101 Features Mechanical Data
... Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. Note that the pre-biased transistor (Q2) has the option of bypassing the series base resistor by connecting directly to pin 7. The N-MOSFET (Q1) is configured as a VBE referenced current sink and is biased on ...
... Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. Note that the pre-biased transistor (Q2) has the option of bypassing the series base resistor by connecting directly to pin 7. The N-MOSFET (Q1) is configured as a VBE referenced current sink and is biased on ...
MAX8873T/S/R, MAX8874T/S/R Low-Dropout, 120mA Linear Regulators _______________General Description ____________________________Features
... The devices feature Dual Mode™ operation: their output voltage is preset (at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions) or can be adjusted with an external resistor divider. Total error on the output is ±3.5%. Output voltages are set on the low side of popular r ...
... The devices feature Dual Mode™ operation: their output voltage is preset (at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions) or can be adjusted with an external resistor divider. Total error on the output is ±3.5%. Output voltages are set on the low side of popular r ...
RFHA1000 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Features
... The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device pri ...
... The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device pri ...
LL4148 Small Signal Diode LL4 148
... intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for u ...
... intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for u ...
ams AG
... All current sinks are built with an internal error amplifier A1 and an external power transistor. The external transistor should be a NMOS type to keep the current accuracy. The output current during PWM=1 can be calculated: ...
... All current sinks are built with an internal error amplifier A1 and an external power transistor. The external transistor should be a NMOS type to keep the current accuracy. The output current during PWM=1 can be calculated: ...
I-V PLOTS OF LIGHT EMITTING DIODES (LEDs)
... therefore is not visible. Incandescent lamps are inefficient light sources because only a small part of the electrical power they consume is converted into visible light. Light emitting diodes (LEDs) which are made out of semiconductor materials such as gallium arsenide (GaAs )are much more efficien ...
... therefore is not visible. Incandescent lamps are inefficient light sources because only a small part of the electrical power they consume is converted into visible light. Light emitting diodes (LEDs) which are made out of semiconductor materials such as gallium arsenide (GaAs )are much more efficien ...
LTC6268 DICE - 500MHz Ultra-Low Bias Current FET Input Op Amp
... positive and negative input pins. Note 4: This parameter is specified by design and/or characterization and is not tested in production. Note 5: The LTC6268 is capable of producing peak output currents in excess of 135mA. Current density limitations within the IC require the continuous current suppl ...
... positive and negative input pins. Note 4: This parameter is specified by design and/or characterization and is not tested in production. Note 5: The LTC6268 is capable of producing peak output currents in excess of 135mA. Current density limitations within the IC require the continuous current suppl ...
20 V, 1.0 A Schottky Rectifier
... Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of ...
... Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of ...
AN-9744 Smart LED Lamp Driver IC with PFC Function
... switching device. When the input voltage is applied to the HV pin is over 25 V to 500 V, the FL7701 maintains a 15.5 VDC at the VCC pin. The FL7701 also has a UVLO block for stable operation. When the VCC voltage reaches higher than VCCST+, the UVLO block starts operation. When the VCC drops below t ...
... switching device. When the input voltage is applied to the HV pin is over 25 V to 500 V, the FL7701 maintains a 15.5 VDC at the VCC pin. The FL7701 also has a UVLO block for stable operation. When the VCC voltage reaches higher than VCCST+, the UVLO block starts operation. When the VCC drops below t ...
Synthesis and characterisation of polyelectrolytes based on
... within printed electronics, among them thin-film transistors, displays, and capacitors. One of the currently most used materials is polystyrene sulfonic acid (PSSH). But for certain projects, PSSH in its current form is not a good material to use due to lack of possible crosslinking. A way to make t ...
... within printed electronics, among them thin-film transistors, displays, and capacitors. One of the currently most used materials is polystyrene sulfonic acid (PSSH). But for certain projects, PSSH in its current form is not a good material to use due to lack of possible crosslinking. A way to make t ...
Schottky diode IV Characteristics
... property in turn allows a smaller device area, which also makes for a faster transition. ...
... property in turn allows a smaller device area, which also makes for a faster transition. ...
IXI848 - IXYS Power
... amplifier output, current is sourced through RG (10R or 10R+40R), to produce a voltage equal to VIN – (IL) (RS) at the inverting input of the amplifier. This develops a voltage across the inverting input resistor, R that matches the sense voltage across RS, plus any associated input offset voltage, ...
... amplifier output, current is sourced through RG (10R or 10R+40R), to produce a voltage equal to VIN – (IL) (RS) at the inverting input of the amplifier. This develops a voltage across the inverting input resistor, R that matches the sense voltage across RS, plus any associated input offset voltage, ...
Low Current/High Resistance Measurements
... constant voltage is most often applied across the unknown resistance. The resulting current is measured from an ammeter placed in series, and the resistance can be found using Ohm’s law (R= V/I). This method of applying a voltage and measuring the current (as opposed to applying a current and measur ...
... constant voltage is most often applied across the unknown resistance. The resulting current is measured from an ammeter placed in series, and the resistance can be found using Ohm’s law (R= V/I). This method of applying a voltage and measuring the current (as opposed to applying a current and measur ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.