Numerical Analysis of Compound Semiconductor RF Devices
... and simulation of heterostructure devices [2]. The characterization of the physical properties of III-V and SiGe compounds is required for wide ranges of material compositions, temperatures, doping concentrations, etc. The model parameters must be verified against several independent HEMT and HBT te ...
... and simulation of heterostructure devices [2]. The characterization of the physical properties of III-V and SiGe compounds is required for wide ranges of material compositions, temperatures, doping concentrations, etc. The model parameters must be verified against several independent HEMT and HBT te ...
Power MOSFET Basics: Understanding Gate Charge and Using it to
... upper case subscripts will refer to rated or applied voltages and currents, while measured or time varying quantities will be designated by lower case subscripts. For example the variable gate drain capacitance is designated as Cgd while its corresponding charge will be designated as QGD. ...
... upper case subscripts will refer to rated or applied voltages and currents, while measured or time varying quantities will be designated by lower case subscripts. For example the variable gate drain capacitance is designated as Cgd while its corresponding charge will be designated as QGD. ...
BJT
... In this chapter, we study the other major three-terminal device: the bipolar junction transistor (BJT). The presentation of the material in this chapter parallels but does not rely on that for the MOSFET in Chapter 4; thus, if desired, the BJT can be studied before the MOSFET. Three-terminal devices ...
... In this chapter, we study the other major three-terminal device: the bipolar junction transistor (BJT). The presentation of the material in this chapter parallels but does not rely on that for the MOSFET in Chapter 4; thus, if desired, the BJT can be studied before the MOSFET. Three-terminal devices ...
UNIT 2 PPT
... Half wave Rectifiers As diodes conduct current in one direction and block in other. When connected with ac voltage, diode only allows half cycle passing through it and hence convert ac into dc. As the half of the wave get rectified, the process called half wave rectification. ...
... Half wave Rectifiers As diodes conduct current in one direction and block in other. When connected with ac voltage, diode only allows half cycle passing through it and hence convert ac into dc. As the half of the wave get rectified, the process called half wave rectification. ...
Hot Swap Device MP5022A
... If the load current increases rapidly due to a short circuit, the current may exceed the current limit threshold by a lot before the control loop can respond. If the current reaches a 36A secondary current limit level, a fast turn-off circuit activates to turn off the power FET using a 100mA pull-do ...
... If the load current increases rapidly due to a short circuit, the current may exceed the current limit threshold by a lot before the control loop can respond. If the current reaches a 36A secondary current limit level, a fast turn-off circuit activates to turn off the power FET using a 100mA pull-do ...
Non-insulated SCR / Triac control circuits
... Non-insulated SCR / Triac control circuits Introduction In alternating current applications the direct current power supply for low-voltage electronic devices (MCU, LEDs, optocouplers, Triacs and so on) can be provided using one of several different circuits. There are traditionally two major types ...
... Non-insulated SCR / Triac control circuits Introduction In alternating current applications the direct current power supply for low-voltage electronic devices (MCU, LEDs, optocouplers, Triacs and so on) can be provided using one of several different circuits. There are traditionally two major types ...
Low-Noise, 900kHz, RRIO, Precision Op Amp Zero
... precision operational amplifiers that are free from phase reversal. The use of proprietary Zerø-Drift circuitry gives the benefit of low input offset voltage over time and temperature as well as lowering the 1/f noise component. This design provides the optimization of gain, noise, and power, making ...
... precision operational amplifiers that are free from phase reversal. The use of proprietary Zerø-Drift circuitry gives the benefit of low input offset voltage over time and temperature as well as lowering the 1/f noise component. This design provides the optimization of gain, noise, and power, making ...
MI2420432050
... auxiliary winding (L3 ) coupled to the transformer of the dc/dc cell, between the input rectifier and the low-frequency filter capacitor used in conventional power converter. Since the dc/dc cell is operated at high frequency, the auxiliary winding produces a high frequency pulsating source such tha ...
... auxiliary winding (L3 ) coupled to the transformer of the dc/dc cell, between the input rectifier and the low-frequency filter capacitor used in conventional power converter. Since the dc/dc cell is operated at high frequency, the auxiliary winding produces a high frequency pulsating source such tha ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-ISSN: 2278-1676,p-ISSN: 2320-3331,
... non-linear loads which draw a non-sinusoidal current even when the supply voltage is perfectly sinusoidal) [1] are the major sources of excessive current harmonics which leads to power quality PQ pollution introduced in electrical grids. The current harmonics has a significant effect on customer loa ...
... non-linear loads which draw a non-sinusoidal current even when the supply voltage is perfectly sinusoidal) [1] are the major sources of excessive current harmonics which leads to power quality PQ pollution introduced in electrical grids. The current harmonics has a significant effect on customer loa ...
Institutionen för systemteknik Biasing for high linearity base-station pre-driver Department of Electrical Engineering
... Chapter 3- Background to The RF Power Amplifiers: an overview in RF power amplifier fundamentals is studied. Define the nonlinearity and metrics to measure the linearity of RF power amplifiers. Subsequently short summery of linearization techniques in RFPA is investigated. Some device technologies a ...
... Chapter 3- Background to The RF Power Amplifiers: an overview in RF power amplifier fundamentals is studied. Define the nonlinearity and metrics to measure the linearity of RF power amplifiers. Subsequently short summery of linearization techniques in RFPA is investigated. Some device technologies a ...
Near Infra-Red Light Detection Using Silicon Avalanche Photodiodes:
... biasing. By implementing different SPAD structures, we studied the geometric trade-offs involved in the design of deepsubmicron APDs. We studied the wavelength dependency of the different APDs and the optimal scales for NIR-sensitive APD design are selected. Based on our results, the p-well and p-su ...
... biasing. By implementing different SPAD structures, we studied the geometric trade-offs involved in the design of deepsubmicron APDs. We studied the wavelength dependency of the different APDs and the optimal scales for NIR-sensitive APD design are selected. Based on our results, the p-well and p-su ...
Solid State Relays
... device in which the load current is conducted by one or more semiconductors - e.g., a power transistor, an SCR, or a TRIAC. (The SCR and TRIAC are often called “thyristors,” a term derived by combining thyratron and transistor, since thyristors are triggered semiconductor switches.) Like all relays, ...
... device in which the load current is conducted by one or more semiconductors - e.g., a power transistor, an SCR, or a TRIAC. (The SCR and TRIAC are often called “thyristors,” a term derived by combining thyratron and transistor, since thyristors are triggered semiconductor switches.) Like all relays, ...
EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer
... devices. The EUP8010X integrates internal power FET, current sensor, charge status and reverse current protection in a single monolithic devices.When AC-adapter is applied, an external resistor sets the magnitude of the charge current, which may be programmed up to 1A. The EUP8010X charges the batte ...
... devices. The EUP8010X integrates internal power FET, current sensor, charge status and reverse current protection in a single monolithic devices.When AC-adapter is applied, an external resistor sets the magnitude of the charge current, which may be programmed up to 1A. The EUP8010X charges the batte ...
Digitally Controlled Pulse Width Modulator for On
... nMOS transistors within the inverters provide the same rise and fall transition times. The duty cycle of a ring oscillator can be tuned by controlling the transition time of the inverters within the ring oscillator. Header and footer circuits are widely used to control the current supplied to the pM ...
... nMOS transistors within the inverters provide the same rise and fall transition times. The duty cycle of a ring oscillator can be tuned by controlling the transition time of the inverters within the ring oscillator. Header and footer circuits are widely used to control the current supplied to the pM ...
NCP1422LEDGEVB NCP1422 High Current LED Driver Evaluation Board User's Manual
... copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation o ...
... copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation o ...
High Reliability
... four-layer devices and all forms of latch-up, including SEL. The device design rules constrain operating voltages to less than one-third BVox and operating at these voltages prevents any SEGR. SEB is not observed in this technology, where high-current bipolar junction transistors (BJT) gain is absen ...
... four-layer devices and all forms of latch-up, including SEL. The device design rules constrain operating voltages to less than one-third BVox and operating at these voltages prevents any SEGR. SEB is not observed in this technology, where high-current bipolar junction transistors (BJT) gain is absen ...
Delay Sensitivity to Vth Variations
... Transmission gates are intrinsically robust with respect to Vth variations Optimal sizing of gates seems around 2x that of standard gates ...
... Transmission gates are intrinsically robust with respect to Vth variations Optimal sizing of gates seems around 2x that of standard gates ...
FST3257 Quad 2:1 Multiplexer / Demultiplexer Bus Switch FST3257 — Quad 2:
... Figure 5. 16-Lead Small Outline Integrated Circuit (SOIC) JEDEC MS-012,0.150 Narrow Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild ...
... Figure 5. 16-Lead Small Outline Integrated Circuit (SOIC) JEDEC MS-012,0.150 Narrow Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild ...
Inductor Selection for SEPIC Designs - Technical Note
... as the input voltage can be higher or lower than the output voltage. This presents obvious design advantages but for many engineers the circuit operation and component selection is a mystery, for those that understand the basics the addition of a coupled inductor is an added complication. This techn ...
... as the input voltage can be higher or lower than the output voltage. This presents obvious design advantages but for many engineers the circuit operation and component selection is a mystery, for those that understand the basics the addition of a coupled inductor is an added complication. This techn ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.