General Description Features
... The MAX6627/MAX6628 can also measure the die temperature of other ICs, such as microprocessors (µPs) or microcontrollers (µCs) that contain an on-chip, diodeconnected transistor. Remote accuracy is ±1°C when the temperature of the remote diode is between 0°C and +125°C and the temperature of the MAX ...
... The MAX6627/MAX6628 can also measure the die temperature of other ICs, such as microprocessors (µPs) or microcontrollers (µCs) that contain an on-chip, diodeconnected transistor. Remote accuracy is ±1°C when the temperature of the remote diode is between 0°C and +125°C and the temperature of the MAX ...
LP38851 800 mA Fast-Response High
... A reverse voltage condition will exist when the voltage at the output pin is higher than the voltage at the input pin. Typically this will happen when VIN is abruptly taken low and COUT continues to hold a sufficient charge such that the input to output voltage becomes reversed. The NMOS pass elemen ...
... A reverse voltage condition will exist when the voltage at the output pin is higher than the voltage at the input pin. Typically this will happen when VIN is abruptly taken low and COUT continues to hold a sufficient charge such that the input to output voltage becomes reversed. The NMOS pass elemen ...
SD830 – SD860 Product Summary Features and Benefits
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
650V IGBT4 the optimized device
... to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved. ...
... to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved. ...
TC62D902FG
... Therefore, the average LED current can do the following computation. ILED(ave.) = Secondary Peak current IS(Peak)*1/2×4/7×2/π = IP(Peak)* turn ratio of Ntr*1/2*4/7*2/π = VIN(peak)/RSEN*Ntr*1/2*4/7*2/π Note: π is pi. This waveform is an enlarged view of a portion of the waveform AC. ...
... Therefore, the average LED current can do the following computation. ILED(ave.) = Secondary Peak current IS(Peak)*1/2×4/7×2/π = IP(Peak)* turn ratio of Ntr*1/2*4/7*2/π = VIN(peak)/RSEN*Ntr*1/2*4/7*2/π Note: π is pi. This waveform is an enlarged view of a portion of the waveform AC. ...
A Study of CMOS Current Comparators in 180 nm Technology
... the quest for high speed, designers are considering currentmode implementations. The striking features of currentmode approaches such as high speed, large bandwidth and reduced supply voltages etc. have made analog designers to take more interest in designing current-mode circuits. However, high per ...
... the quest for high speed, designers are considering currentmode implementations. The striking features of currentmode approaches such as high speed, large bandwidth and reduced supply voltages etc. have made analog designers to take more interest in designing current-mode circuits. However, high per ...
Negative Voltage SPDT Switch
... SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any ...
... SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any ...
FEATURES GENERAL DESCRIPTION The ADP197CB-EVALZ is used to demonstrate the functio- e
... ESD Caution ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. Therefore, proper ESD precautions sho ...
... ESD Caution ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. Therefore, proper ESD precautions sho ...
Principles of Electronic Communication Systems
... The GaAs MESFET, a type of JFET, uses a Schottky barrier junction and can operate at frequencies in excess of 5 GHz. A high electron mobility transistor (HEMT) is a variant of the MESFET and extends the range beyond 20 GHz by adding an extra layer of semiconductor material such as AlGaAs. A popular ...
... The GaAs MESFET, a type of JFET, uses a Schottky barrier junction and can operate at frequencies in excess of 5 GHz. A high electron mobility transistor (HEMT) is a variant of the MESFET and extends the range beyond 20 GHz by adding an extra layer of semiconductor material such as AlGaAs. A popular ...
Latchable Negative Floating Hot Swap Power
... The PL amplifier is designed to only source current into the CT pin and to begin sourcing current once the voltage across the output FET exceeds 5V. The current IPL ...
... The PL amplifier is designed to only source current into the CT pin and to begin sourcing current once the voltage across the output FET exceeds 5V. The current IPL ...
ixrfd631 - IXYS Colorado
... for returning current that need to be considered: Path one is between the IXRFD631 and its load, and path two is between the IXRFD631 and its power supply. Both of these paths should be as low in resistance and inductance as possible, and thus as short as practical. ...
... for returning current that need to be considered: Path one is between the IXRFD631 and its load, and path two is between the IXRFD631 and its power supply. Both of these paths should be as low in resistance and inductance as possible, and thus as short as practical. ...
Pdf
... which requires electrical energy. When I change the load or if the current which is being drawn by the appliance is different, it can happen all the time, then the voltage which is actually applied across the load will no more be a constant unless it is a regulated power supply. To explain it little ...
... which requires electrical energy. When I change the load or if the current which is being drawn by the appliance is different, it can happen all the time, then the voltage which is actually applied across the load will no more be a constant unless it is a regulated power supply. To explain it little ...
Harmonic Distortion
... positive half cycle of the input producing the positive half cycle across the load. While the transistor Q2 conducts for negative half cycle of the input, thus across the load, we get a full cycle for a full input cycle. ...
... positive half cycle of the input producing the positive half cycle across the load. While the transistor Q2 conducts for negative half cycle of the input, thus across the load, we get a full cycle for a full input cycle. ...
PAM2306D Description Pin Assignments
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
Si3831DV Bi-Directional P-Channel MOSFET/Power Switch
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
- Universiti Teknikal Malaysia Melaka Repository
... the conventional one. One of the solutions is to apply strained silicon alternative to the conventional devices so that the structure of the MOSFET is not totally changed but the device performances are improved. In order to increase the mobility and the speed of the electronic devices, semiconducto ...
... the conventional one. One of the solutions is to apply strained silicon alternative to the conventional devices so that the structure of the MOSFET is not totally changed but the device performances are improved. In order to increase the mobility and the speed of the electronic devices, semiconducto ...
3-0369 HiTest Arrester Brochure
... use. They are current limited high voltage testers that can be used for safe and non-destructive testing of arresters, insulators and a wide variety of other parts and materials. They identify faulty arresters, assist in reducing line losses and reduce customer complaints. Non-visible failures of su ...
... use. They are current limited high voltage testers that can be used for safe and non-destructive testing of arresters, insulators and a wide variety of other parts and materials. They identify faulty arresters, assist in reducing line losses and reduce customer complaints. Non-visible failures of su ...
FMMT591QTA - Diodes Incorporated
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
TPS54872 数据资料 dataSheet 下载
... the printed circuit board (PCB) and bypassed with a low ESR ceramic bypass capacitor. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the VIN pins, and the TPS54872 ground pins. The minimum recommended bypass capacitance is 10 µF ceramic with a X5R or X7R d ...
... the printed circuit board (PCB) and bypassed with a low ESR ceramic bypass capacitor. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the VIN pins, and the TPS54872 ground pins. The minimum recommended bypass capacitance is 10 µF ceramic with a X5R or X7R d ...
FSQ0465RS/RB Green-Mode Fairchild Power Switch (FPS™) for Quasi-Resonant Operation -
... Figure 3. Pin Configuration (Top View) ...
... Figure 3. Pin Configuration (Top View) ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.