5.2 Connection with 8085A
... Detailed data sheets are available from your local Optrex representative for each model. Please contact your local representative for the data. ...
... Detailed data sheets are available from your local Optrex representative for each model. Please contact your local representative for the data. ...
Protecting High Speed Communication Ports
... The USB (Universal Serial Bus) specification provides a platform to allow a single USB port to drive 127 USB peripherals from a single host termination (PC). USB also allows remote powering from the host of a broad range of low power after-market accessories including travel lights, mobile phone cha ...
... The USB (Universal Serial Bus) specification provides a platform to allow a single USB port to drive 127 USB peripherals from a single host termination (PC). USB also allows remote powering from the host of a broad range of low power after-market accessories including travel lights, mobile phone cha ...
Heating in Aluminum Electrolytic Strobe and Photoflash Capacitors
... is temperature. In practice, RSP varies only with temperature, up to a fairly high frequency at which In most applications, there is a ripple current at 50 rolloff begins; this frequency is a function of the Hz or higher, and the resulting AC voltage is small, foil etch structure and the electrolyte ...
... is temperature. In practice, RSP varies only with temperature, up to a fairly high frequency at which In most applications, there is a ripple current at 50 rolloff begins; this frequency is a function of the Hz or higher, and the resulting AC voltage is small, foil etch structure and the electrolyte ...
AM22236240
... regardless of the memory location that was last accessed. The schematic diagram of 6T SRAM cell is shown in fig 1. Each bit in an SRAM is stored on four transistors that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access ...
... regardless of the memory location that was last accessed. The schematic diagram of 6T SRAM cell is shown in fig 1. Each bit in an SRAM is stored on four transistors that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access ...
System Solutions
... The equipment used in the potentially explosive atmosphere contains only intrinsically safe circuits. A circuit is intrinsically safe if no sparks and no thermal effect can cause the ignition of a potentially explosive atmosphere. For this purpose the energy in the circuit is limited via the paramet ...
... The equipment used in the potentially explosive atmosphere contains only intrinsically safe circuits. A circuit is intrinsically safe if no sparks and no thermal effect can cause the ignition of a potentially explosive atmosphere. For this purpose the energy in the circuit is limited via the paramet ...
Chapter 3
... on a ratio. Then VBE decreases and then decreases IC , thus the resulting change is less than expected from the initial change ...
... on a ratio. Then VBE decreases and then decreases IC , thus the resulting change is less than expected from the initial change ...
Evaluation of the Radiation Tolerance of Several Generations of
... “ Ionizing radiation has been shown to damage the EB spacer region in these SiGe HBTs, and produce a perimeterdependent space-charge generation/recombination (G/R) base-current leakage component that progressively degrades the base current (and current gain) as the fluence increases. …the 7HP device ...
... “ Ionizing radiation has been shown to damage the EB spacer region in these SiGe HBTs, and produce a perimeterdependent space-charge generation/recombination (G/R) base-current leakage component that progressively degrades the base current (and current gain) as the fluence increases. …the 7HP device ...
AN817 A Discrete Approach to Battery Charging for Cellular
... region 2 is CV. A fully discharged cell (typically 3 V) will initially be charged by a constant current, since the cell’s voltage is well below the 4.1-V constant voltage limit. Once the cell’s voltage rises to the float voltage of 4.1 V, the charging circuitry limits the further rise in terminal vo ...
... region 2 is CV. A fully discharged cell (typically 3 V) will initially be charged by a constant current, since the cell’s voltage is well below the 4.1-V constant voltage limit. Once the cell’s voltage rises to the float voltage of 4.1 V, the charging circuitry limits the further rise in terminal vo ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.