RT9363A - Richtek
... to reduce the output ripple, increasing the output capacitance COUT is necessary. However, this will increase the start-up time of output voltage. For LED driver applications, the input voltage ripple is more important than the output ripple. Input ripple is controlled by input capacitor CIN, increa ...
... to reduce the output ripple, increasing the output capacitance COUT is necessary. However, this will increase the start-up time of output voltage. For LED driver applications, the input voltage ripple is more important than the output ripple. Input ripple is controlled by input capacitor CIN, increa ...
Physics 17 Spring 2003 The Stefan
... filament, which we cannot measure with the equipment available. Therefore, we rewrite equation (4) by multiplying both sides by the surface area: P = AsT4 ...
... filament, which we cannot measure with the equipment available. Therefore, we rewrite equation (4) by multiplying both sides by the surface area: P = AsT4 ...
Varistor Plus Single Layer Technology Varistor Glossary of Terms and Definitions Term
... A figure of merit measure of the varistor clamping effectiveness as defined by the symbols V C / V APP , where V APP = V RM S or V DC . ...
... A figure of merit measure of the varistor clamping effectiveness as defined by the symbols V C / V APP , where V APP = V RM S or V DC . ...
Chapter 22 Student Notes
... D. So that the transmission line do not damage (does not break off) ...
... D. So that the transmission line do not damage (does not break off) ...
Chapter 5(cont)_NOISE
... It may be seen that the first term in the denominator increases with increasing M whereas the second term decreases. For low M the combined thermal and amplifier noise term dominates and the total noise power is virtually unaffected when the signal level is increased, giving an improved SNR. However ...
... It may be seen that the first term in the denominator increases with increasing M whereas the second term decreases. For low M the combined thermal and amplifier noise term dominates and the total noise power is virtually unaffected when the signal level is increased, giving an improved SNR. However ...
Unijunction Transistor Symbol and Construction
... Notice that the symbol for the unijunction transistor looks very similar to that of the junction field effect transistor or JFET, except that it has a bent arrow representing the Emitter( E ) input. While similar in respect of their ohmic channels, JFET’s and UJT’s operate very differently and shoul ...
... Notice that the symbol for the unijunction transistor looks very similar to that of the junction field effect transistor or JFET, except that it has a bent arrow representing the Emitter( E ) input. While similar in respect of their ohmic channels, JFET’s and UJT’s operate very differently and shoul ...
BDTIC www.BDTIC.com/infineon BGA612
... Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditio ...
... Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditio ...
AN1052: Selecting a FET For Use With the Si875x
... Si875x datasheet for actual minimum and maximum values). The threshold voltage of the chosen transistor needs to be significantly below this. For most devices, the threshold voltage is typically less than 5 V and this parameter is usually not an issue. 2.2 Switching Characteristics The switching cha ...
... Si875x datasheet for actual minimum and maximum values). The threshold voltage of the chosen transistor needs to be significantly below this. For most devices, the threshold voltage is typically less than 5 V and this parameter is usually not an issue. 2.2 Switching Characteristics The switching cha ...
Bipolar Junction Transistor Modeling Topics for - SMDP-VLSI
... Conflicting Requirements for fT and fm ...
... Conflicting Requirements for fT and fm ...
Reliability Considerations for Power Supplies
... idea. Board lands need to be large enough for components and current, and through-holes need sufficient size and plating. None of these factors show up on the circuit schematic. ...
... idea. Board lands need to be large enough for components and current, and through-holes need sufficient size and plating. None of these factors show up on the circuit schematic. ...
Lesson 2: Electrical Resistance
... - The electrical resistance of an object depends on the resistivity of the material it is made from; its physical measurements (cross-sectional area and length); and its temperature. Be able to - Calculate electrical resistance; resistivity; length; or cross-sectional area of an object. - Select gra ...
... - The electrical resistance of an object depends on the resistivity of the material it is made from; its physical measurements (cross-sectional area and length); and its temperature. Be able to - Calculate electrical resistance; resistivity; length; or cross-sectional area of an object. - Select gra ...
Failure Precursors for Insulated Gate Bipolar Transistors (IGBTs)
... FMMEA is a methodology to identify potential failure mechanisms and models for all potential failure modes, and to prioritize failure mechanisms. The output of the FMMEA process is a list of critical failure mechanisms that help us identify the precursors to monitor and the relevant physics of failu ...
... FMMEA is a methodology to identify potential failure mechanisms and models for all potential failure modes, and to prioritize failure mechanisms. The output of the FMMEA process is a list of critical failure mechanisms that help us identify the precursors to monitor and the relevant physics of failu ...
AMS1505V 数据手册DataSheet 下载
... typical 6mA and is constant as a function of load. Adjust pin current for adjustable devices is 60µA at 25°C and varies proportional to absolute temperature. The improved frequency compensation of AMS1505V permits the use of capacitors with very low ESR. This is critical in addressing the needs of m ...
... typical 6mA and is constant as a function of load. Adjust pin current for adjustable devices is 60µA at 25°C and varies proportional to absolute temperature. The improved frequency compensation of AMS1505V permits the use of capacitors with very low ESR. This is critical in addressing the needs of m ...
SOFC`s Interconnects Materials Development
... SOFC components. In particular, when it comes to the rapid heating and cooling frequently encountered in such applications as auxiliary power unit for automotive and portable power sources for laptops, the requirement for thermal compatibility is more rigorous. As metallic materials usually have inh ...
... SOFC components. In particular, when it comes to the rapid heating and cooling frequently encountered in such applications as auxiliary power unit for automotive and portable power sources for laptops, the requirement for thermal compatibility is more rigorous. As metallic materials usually have inh ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.