36-V, Low- or High-Side, Bidirectional, Zero-Drift
... See the Integrated Shunt Resistor section for additional information regarding the integrated current-sensing resistor. The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistor section f ...
... See the Integrated Shunt Resistor section for additional information regarding the integrated current-sensing resistor. The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistor section f ...
AP6502A Description Pin Assignments
... EA output voltage, the RS Flip-Flop is reset and HS MOSFET is turned off. For one whole cycle, if the sum of the current sense amplifier output and the slope compensation signal does not exceed the EA output, then the falling edge of the oscillator clock resets the Flip-Flop. The output of the error ...
... EA output voltage, the RS Flip-Flop is reset and HS MOSFET is turned off. For one whole cycle, if the sum of the current sense amplifier output and the slope compensation signal does not exceed the EA output, then the falling edge of the oscillator clock resets the Flip-Flop. The output of the error ...
MAX16128/MAX16129 - Load-Dump/Reverse
... back-to-back n-channel MOSFETs that turn off and isolate downstream power supplies during damaging input conditions, such as an automotive load-dump pulse or a reverse-battery condition. Operation is guaranteed down to 3V that ensures proper operation during automotive cold-crank conditions. These d ...
... back-to-back n-channel MOSFETs that turn off and isolate downstream power supplies during damaging input conditions, such as an automotive load-dump pulse or a reverse-battery condition. Operation is guaranteed down to 3V that ensures proper operation during automotive cold-crank conditions. These d ...
SG6742HL/HR Highly Integrated Green-Mode PWM Controller SG6742H L/H
... supply with minimum line filters. Its built-in synchronized slope compensation achieves stable peak-current-mode control. The proprietary, internal line compensation ensures constant output power limit over a wide AC input voltage range, from 90VAC to 264VAC. ...
... supply with minimum line filters. Its built-in synchronized slope compensation achieves stable peak-current-mode control. The proprietary, internal line compensation ensures constant output power limit over a wide AC input voltage range, from 90VAC to 264VAC. ...
Leaving Cert Physics Long Questions 5. Temperature and Heat
... At a lecture in Cork in 1843, James Joule, while describing his work on heat and temperature, suggested the principle of conservation of energy. Later in the nineteenth century, the work of Joule and Lord Kelvin led to the invention of the heat pump. (i) Distinguish between heat and temperature. (ii ...
... At a lecture in Cork in 1843, James Joule, while describing his work on heat and temperature, suggested the principle of conservation of energy. Later in the nineteenth century, the work of Joule and Lord Kelvin led to the invention of the heat pump. (i) Distinguish between heat and temperature. (ii ...
Cree Power White Paper: The Characterization of dV/dt
... switched applications. This can be illustrated by considering a very popular application of SiC devices, a power factor correction circuit (PFC) as shown in figure one. The maximum switching speed of MOSFET M1 is limited by the maximum dV/dt of the boost diode, D1. In this example, the turn-on loss ...
... switched applications. This can be illustrated by considering a very popular application of SiC devices, a power factor correction circuit (PFC) as shown in figure one. The maximum switching speed of MOSFET M1 is limited by the maximum dV/dt of the boost diode, D1. In this example, the turn-on loss ...
DSS3515M Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
AP6508 500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER Description
... 2. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may ...
... 2. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may ...
具有停机模式的 、低噪声、 、 运算放大器
... The OPA322 incorporates internal electrostatic discharge (ESD) protection circuits on all pins. In the case of input and output pins, this protection primarily consists of current-steering diodes connected between the input and power-supply pins. These ESD protection diodes also provide in-circuit i ...
... The OPA322 incorporates internal electrostatic discharge (ESD) protection circuits on all pins. In the case of input and output pins, this protection primarily consists of current-steering diodes connected between the input and power-supply pins. These ESD protection diodes also provide in-circuit i ...
Lecture 24
... • In recent decades, the higher layout density and low-power advantage of CMOS technology has eroded the BJT’s dominance in integrated-circuit products. (higher circuit density better system performance) • BJTs are still preferred in some integrated circuit applications because of their high speed ...
... • In recent decades, the higher layout density and low-power advantage of CMOS technology has eroded the BJT’s dominance in integrated-circuit products. (higher circuit density better system performance) • BJTs are still preferred in some integrated circuit applications because of their high speed ...
Power Factor Corrected Q-R PS C-M Controller for LED Lighting w TF
... NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after an OTP situation. 8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the SD pin ...
... NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after an OTP situation. 8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the SD pin ...
SPOC Front Light BTS5482SF - Application note
... pins. The BTS5482SF provides a reverse battery protection called ReverSaveTM. Due to this feature, all internal channels are switched ON in case of reverse battery and the power dissipation is reduced to the losses caused by the reverse ON-state resistance RDS(REV). Since there are no protection fun ...
... pins. The BTS5482SF provides a reverse battery protection called ReverSaveTM. Due to this feature, all internal channels are switched ON in case of reverse battery and the power dissipation is reduced to the losses caused by the reverse ON-state resistance RDS(REV). Since there are no protection fun ...
Chapter 2 Technical Terms and Characteristics
... Collector current when a specific voltage is applied between the collector and emitter with the gate and emitter shorted Gate current when a specific voltage is applied between the gate and emitter with the collector and emitter shorted Gate-emitter voltage at a specified collector current and colle ...
... Collector current when a specific voltage is applied between the collector and emitter with the gate and emitter shorted Gate current when a specific voltage is applied between the gate and emitter with the collector and emitter shorted Gate-emitter voltage at a specified collector current and colle ...
Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
High field breakdown characteristics of carbon nanotube
... reliability and breakdown behavior of CN-TFTs as well. The variation in the breakdown behavior for a given TFT geometry can lead to instability and/or unreliability during the operation of CN-TFTs. Thus, it is very important to understand how the geometrical parameters affect the high field operatio ...
... reliability and breakdown behavior of CN-TFTs as well. The variation in the breakdown behavior for a given TFT geometry can lead to instability and/or unreliability during the operation of CN-TFTs. Thus, it is very important to understand how the geometrical parameters affect the high field operatio ...
PDF
... when WNW reduces from 60 to 9 nm for Lg = 80 nm. This is attributed to the higher channel resistance with decreasing WNW . A higher channel resistance corresponds to less degradation of intrinsic Vds when Vgs increases, which is beneficial for higher gm linearity [4], especially for JL FETs. We beli ...
... when WNW reduces from 60 to 9 nm for Lg = 80 nm. This is attributed to the higher channel resistance with decreasing WNW . A higher channel resistance corresponds to less degradation of intrinsic Vds when Vgs increases, which is beneficial for higher gm linearity [4], especially for JL FETs. We beli ...
CLA4603-085LF 数据资料DataSheet下载
... The DC block capacitors shown in Figure 2 are optional; they protect the limiter diode from external DC voltage that may be present in the source or load circuits. A cross section of the suggested printed circuit board design is shown in Figure 3. The via shown in this view is critical, both for ele ...
... The DC block capacitors shown in Figure 2 are optional; they protect the limiter diode from external DC voltage that may be present in the source or load circuits. A cross section of the suggested printed circuit board design is shown in Figure 3. The via shown in this view is critical, both for ele ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.