TOP232 - 234 - Power Integrations
... cost effectively integrates many new functions that reduce system cost and, at the same time, improve design flexibility, performance and energy efficiency. Like TOPSwitch, the high-voltage power MOSFET, PWM control, fault protection and other control circuitry are all integrated onto a single CMOS ...
... cost effectively integrates many new functions that reduce system cost and, at the same time, improve design flexibility, performance and energy efficiency. Like TOPSwitch, the high-voltage power MOSFET, PWM control, fault protection and other control circuitry are all integrated onto a single CMOS ...
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... • When voltage on C1 exceeds DIAC threshold voltage the TRIAC conducts – R1 controls when TRIAC turns ON, dimming function ...
... • When voltage on C1 exceeds DIAC threshold voltage the TRIAC conducts – R1 controls when TRIAC turns ON, dimming function ...
Integrated Circuit True RMS-to-DC Converter AD536A
... voltages; these ranges are shown in Figure 21 and Figure 22. The AD536A can also be used in an unbuffered voltage output mode by disconnecting the input to the buffer. The output then appears unbuffered across the 25 kΩ resistor. The buffer amplifier can then be used for other purposes. Further, the ...
... voltages; these ranges are shown in Figure 21 and Figure 22. The AD536A can also be used in an unbuffered voltage output mode by disconnecting the input to the buffer. The output then appears unbuffered across the 25 kΩ resistor. The buffer amplifier can then be used for other purposes. Further, the ...
MAX3735/MAX3735A 2.7Gbps, Low-Power SFP Laser Drivers General Description Features
... TX_FAULT is an open-collector output and must be pulled up with a 4.7kΩ to 10kΩ resistor. Guaranteed by design and characterization. VCC turn-on time must be ≤ 0.8s, DC-coupled interface. Gain stability is defined by the digital diagnostic document (SFF-8472, rev. 9.0) over temperature and supply va ...
... TX_FAULT is an open-collector output and must be pulled up with a 4.7kΩ to 10kΩ resistor. Guaranteed by design and characterization. VCC turn-on time must be ≤ 0.8s, DC-coupled interface. Gain stability is defined by the digital diagnostic document (SFF-8472, rev. 9.0) over temperature and supply va ...
Design and Implementation of a Lithium-ion Cell
... Batteries of various chemistries have been relied on to provide energy for numerous portable electronic devices. Lithium-ion cells, when compared to other chemistries have been known to provide outstanding energy-to-weight ratios and exhibit low self-discharge when not in use [1]. The aforementioned ...
... Batteries of various chemistries have been relied on to provide energy for numerous portable electronic devices. Lithium-ion cells, when compared to other chemistries have been known to provide outstanding energy-to-weight ratios and exhibit low self-discharge when not in use [1]. The aforementioned ...
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... 4.1.1 Silicon Structure The IGBT silicon structure is as shown in Figure 4.2. A positive voltage on the gate attracts electrons from the “p” gate region towards the silicon surface under the gate. These electrons invert the “p” directly under the gate to form an “n” region, thus creating a path for ...
... 4.1.1 Silicon Structure The IGBT silicon structure is as shown in Figure 4.2. A positive voltage on the gate attracts electrons from the “p” gate region towards the silicon surface under the gate. These electrons invert the “p” directly under the gate to form an “n” region, thus creating a path for ...
Chapter 16
... • Series circuits have a single path for current. • When appliances or other devices are connected in a series circuit, they form a single pathway for charges to flow. • In a series circuit, the components of a circuit form a single path for current. • The current in each device is the same. • The r ...
... • Series circuits have a single path for current. • When appliances or other devices are connected in a series circuit, they form a single pathway for charges to flow. • In a series circuit, the components of a circuit form a single path for current. • The current in each device is the same. • The r ...
Chapter 16
... • Series circuits have a single path for current. • When appliances or other devices are connected in a series circuit, they form a single pathway for charges to flow. • In a series circuit, the components of a circuit form a single path for current. • The current in each device is the same. • The r ...
... • Series circuits have a single path for current. • When appliances or other devices are connected in a series circuit, they form a single pathway for charges to flow. • In a series circuit, the components of a circuit form a single path for current. • The current in each device is the same. • The r ...
Calculating noise figure in op amps
... Today, the performance of wide-band op amps is making them viable alternatives to more traditional open-loop amplifiers like monolithic microwave integrated circuits (MMICs) and discrete transistors in communications design. Recognizing the need to specify wideband op amps in RF engineering terminol ...
... Today, the performance of wide-band op amps is making them viable alternatives to more traditional open-loop amplifiers like monolithic microwave integrated circuits (MMICs) and discrete transistors in communications design. Recognizing the need to specify wideband op amps in RF engineering terminol ...
Analysis of a Novel Soft Switching Bidirectional DC-DC
... series resonant tank. Moreover, when 500[ns] is defined as a ZVS boundary, the corresponding coefficient is 1.3, and corresponding resonant frequency is approximately 3.0fs as well. ...
... series resonant tank. Moreover, when 500[ns] is defined as a ZVS boundary, the corresponding coefficient is 1.3, and corresponding resonant frequency is approximately 3.0fs as well. ...
measurement of material resistivity and contact resistance of
... contact spot and thus an increased reaction rate in this zone, which may again lead to consumption of the contact point. If a gas filled gap is formed, or non-conducting material is deposited the contact resistance will increase, but there might be an increase of the contact area and thus a decrease ...
... contact spot and thus an increased reaction rate in this zone, which may again lead to consumption of the contact point. If a gas filled gap is formed, or non-conducting material is deposited the contact resistance will increase, but there might be an increase of the contact area and thus a decrease ...
1625-2 Users Manual Earth/Ground Tester
... Each Fluke product is warranted to be free from defects in material and workmanship under normal use and service. The warranty period is two years and begins on the date of shipment. Parts, product repairs, and services are warranted for 90 days. This warranty extends only to the original buyer or e ...
... Each Fluke product is warranted to be free from defects in material and workmanship under normal use and service. The warranty period is two years and begins on the date of shipment. Parts, product repairs, and services are warranted for 90 days. This warranty extends only to the original buyer or e ...
MOSFET Safe Operating Area and Hot Swap Circuits
... Because thermal behavior is linear, we can use the transient thermal impedance plot to determine the temperature rise for any power shape. While it is possible to do this calculation using convolution, it is easier to model thermal behavior in an electrical circuit simulator such as SPICE. In partic ...
... Because thermal behavior is linear, we can use the transient thermal impedance plot to determine the temperature rise for any power shape. While it is possible to do this calculation using convolution, it is easier to model thermal behavior in an electrical circuit simulator such as SPICE. In partic ...
LF412-N 数据资料 dataSheet 下载
... The amplifiers will drive a 2 kΩ load resistance to ±10V over the full temperature range. If the amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the negative voltage swing and finally reach an active current limit on both positive and neg ...
... The amplifiers will drive a 2 kΩ load resistance to ±10V over the full temperature range. If the amplifier is forced to drive heavier load currents, however, an increase in input offset voltage may occur on the negative voltage swing and finally reach an active current limit on both positive and neg ...
Experiment 6 Transistors as amplifiers and switches
... semiconductor diode, this voltage will be a very weak function of the base current I B , so we will use the working assumption that it is a fixed, constant value. Consequently, if we know VB , then we also know VE , and vice versa. Given VE , we now know the voltage drop across the resistor RE , so ...
... semiconductor diode, this voltage will be a very weak function of the base current I B , so we will use the working assumption that it is a fixed, constant value. Consequently, if we know VB , then we also know VE , and vice versa. Given VE , we now know the voltage drop across the resistor RE , so ...
MAX1106/MAX1107 Single-Supply, Low-Power, Serial 8-Bit ADCs General Description
... The MAX1106/MAX1107 low-power, 8-bit, single-channel, analog-to-digital converters (ADCs) feature an internal track/hold (T/H), voltage reference, clock, and serial interface. The MAX1106 is specified from +2.7V to +3.6V and consumes only 96µA. The MAX1107 is specified from +4.5V to +5.5V and consum ...
... The MAX1106/MAX1107 low-power, 8-bit, single-channel, analog-to-digital converters (ADCs) feature an internal track/hold (T/H), voltage reference, clock, and serial interface. The MAX1106 is specified from +2.7V to +3.6V and consumes only 96µA. The MAX1107 is specified from +4.5V to +5.5V and consum ...
Impedance spectroscopy
... defined by the constants Y and n, and their impedance is given according to ...
... defined by the constants Y and n, and their impedance is given according to ...
Secure Application of Transformer Differential Relays for Bus
... The magnetic core material has a characteristic that is described by the familiar B-H curve. The “S” shaped characteristic in Fig. 2, a reproduction of Fig. 9 in Reference [2], is an example of a typical B-H curve. The x-axis is H, which is the magnetic field intensity. This is measured in Oersteds ...
... The magnetic core material has a characteristic that is described by the familiar B-H curve. The “S” shaped characteristic in Fig. 2, a reproduction of Fig. 9 in Reference [2], is an example of a typical B-H curve. The x-axis is H, which is the magnetic field intensity. This is measured in Oersteds ...
PIC MCU Comparator Tips n Tricks
... output which the microcontroller can capture. The circuit is designed with two feedback paths around a comparator. The first is a positive hysteresis feedback which sets a two level threshold, VHI and VLO, based on the state of the comparator output. The second feedback path is an RC time circuit. T ...
... output which the microcontroller can capture. The circuit is designed with two feedback paths around a comparator. The first is a positive hysteresis feedback which sets a two level threshold, VHI and VLO, based on the state of the comparator output. The second feedback path is an RC time circuit. T ...