Old Company Name in Catalogs and Other Documents
... The μ PC835 is the higher version of μ PC832 and 4062, the J-FET input operational amplifiers, in stability and accuracy. The μ PC835 is a J-FET input dual operational amplifier which realizes both low power consumption and high stability, by adopting a high speed PNP transistor of fT = 300 MHz on i ...
... The μ PC835 is the higher version of μ PC832 and 4062, the J-FET input operational amplifiers, in stability and accuracy. The μ PC835 is a J-FET input dual operational amplifier which realizes both low power consumption and high stability, by adopting a high speed PNP transistor of fT = 300 MHz on i ...
Judicious use of aluminum electrolytic capacitors
... thin as 1.1 - 1.5 nm/volt and showing a high insulation resistance (108 - 109 Ω/m). The thickness of the oxide layer determines the withstand voltage according to their direct proportional relationship. For the etching pits to be shaped to the intended thickness of the oxide layer, the pit patterns ...
... thin as 1.1 - 1.5 nm/volt and showing a high insulation resistance (108 - 109 Ω/m). The thickness of the oxide layer determines the withstand voltage according to their direct proportional relationship. For the etching pits to be shaped to the intended thickness of the oxide layer, the pit patterns ...
COH Interference 7-10
... the affected structure at those locations where the interfering current is being discharged. The source of cathodic protection may be galvanic or impressed current anodes. 3. Adjustment of the current output from the ...
... the affected structure at those locations where the interfering current is being discharged. The source of cathodic protection may be galvanic or impressed current anodes. 3. Adjustment of the current output from the ...
DRAFT SOUTH AFRICAN STANDARD (DSS): PUBLIC ENQUIRY STAGE Document number
... international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (her ...
... international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (her ...
SIGC28T60SE
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
Scaling properties of a non-Fowler–Nordheim tunnelling junction
... with d was observed over a range of several orders of magnitude for d, from millimetres to several nanometres, but it began failing when d was only a few nanometres. At the outset of this work, it must be said that if the emitting surface is either planar or of large radius of curvature R, then the ...
... with d was observed over a range of several orders of magnitude for d, from millimetres to several nanometres, but it began failing when d was only a few nanometres. At the outset of this work, it must be said that if the emitting surface is either planar or of large radius of curvature R, then the ...
ACTIVE MATRIX LCDs
... The nonlinearity factor b (÷4 for Ta(subscript 2)O(subscript 5) can be improved using alternative insulators. One of them is off-stoichiometric silicon nitride (SiN(subscript x) produced by PECVD (Suzuki 1986). The I-V characteristics of SiNx diodes can also be fitted to the Poole-Frenkel equation. ...
... The nonlinearity factor b (÷4 for Ta(subscript 2)O(subscript 5) can be improved using alternative insulators. One of them is off-stoichiometric silicon nitride (SiN(subscript x) produced by PECVD (Suzuki 1986). The I-V characteristics of SiNx diodes can also be fitted to the Poole-Frenkel equation. ...
Bipolar Junction Transistor
... The electrons are injected into the E region by the EB supply VEB. These conduction band e have enough energy to overcome the EB barrier potential. The injected e enter into very thin, lightly doped base region bcoz the base is very lightly doped relative to the E region, only the few of the ...
... The electrons are injected into the E region by the EB supply VEB. These conduction band e have enough energy to overcome the EB barrier potential. The injected e enter into very thin, lightly doped base region bcoz the base is very lightly doped relative to the E region, only the few of the ...
MAX5923 +60V Simple Swapper Hot-Swap Switch General Description Features
... When V OUT is within 750mV of V IN for more than tPOK_HIGH, POK goes open-drain. After POK is asserted, the MAX5923 activates the zero-current detection function. This function monitors the output for an undercurrent condition and eventually turns off the power to the output if the load is disconnec ...
... When V OUT is within 750mV of V IN for more than tPOK_HIGH, POK goes open-drain. After POK is asserted, the MAX5923 activates the zero-current detection function. This function monitors the output for an undercurrent condition and eventually turns off the power to the output if the load is disconnec ...
SIGC84T120R3LE
... Edited by INFINEON Technologies, IFAG IPC TD VLS, L7677N, L7677U, L7677F, Rev 2.3, 02.07.2014 ...
... Edited by INFINEON Technologies, IFAG IPC TD VLS, L7677N, L7677U, L7677F, Rev 2.3, 02.07.2014 ...
MAX8709B High-Efficiency CCFL Backlight Controller with SMBus Interface General Description
... provides near-sinusoidal waveforms over the entire input range to improve CCFL lifetime. The controller operates over a wide input voltage range of 4.6V to 28V with high power-to-light efficiency. The device also includes safety features that effectively protect against many single-point fault condi ...
... provides near-sinusoidal waveforms over the entire input range to improve CCFL lifetime. The controller operates over a wide input voltage range of 4.6V to 28V with high power-to-light efficiency. The device also includes safety features that effectively protect against many single-point fault condi ...
SIGC101T170R3E
... types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infi ...
... types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infi ...
MAX3205E/MAX3207E/MAX3208E Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs General Description
... 45 x 109). An inductance of only 10nH adds an additional 450V to the clamp voltage and represents approximately 0.5in of board trace. Regardless of the device’s specified diode clamp voltage, a poor layout with parasitic inductance significantly increases the effective clamp voltage at the protected ...
... 45 x 109). An inductance of only 10nH adds an additional 450V to the clamp voltage and represents approximately 0.5in of board trace. Regardless of the device’s specified diode clamp voltage, a poor layout with parasitic inductance significantly increases the effective clamp voltage at the protected ...
Robot Path Planning Using Field Programmable
... and time to read the solution from the grid. Each of these are addressed below. 1) FPAA Programming Time Measurements: Programming a grid map onto the FPAA is done in two main phases: First, the FPAA is erased and prepared for programming, second, the new map is programmed onto the FPAA. With our cu ...
... and time to read the solution from the grid. Each of these are addressed below. 1) FPAA Programming Time Measurements: Programming a grid map onto the FPAA is done in two main phases: First, the FPAA is erased and prepared for programming, second, the new map is programmed onto the FPAA. With our cu ...
PS9505,PS9505L1,PS9505L2,PS9505L3 Data Sheet Preliminary
... output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the b ...
... output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the b ...
AAT4611 数据资料DataSheet下载
... determined by RSET (see Figure 2). Since the load is demanding more current than ILIM, the voltage at the output drops. This causes the AAT4611 to dissipate a larger-than-normal quantity of power, and causes the die temperature to increase. When the die temperature exceeds an over-temperature limit, ...
... determined by RSET (see Figure 2). Since the load is demanding more current than ILIM, the voltage at the output drops. This causes the AAT4611 to dissipate a larger-than-normal quantity of power, and causes the die temperature to increase. When the die temperature exceeds an over-temperature limit, ...
FFH75H60S 75 A, 600 V, Hyperfast Diode F H75H60S — Hyperfast Diode
... • Max Forward Voltage, VF = 1.8 V (@ TC = 25°C) ...
... • Max Forward Voltage, VF = 1.8 V (@ TC = 25°C) ...
PDF：213KB
... The anode short GTO thyristor has a peak repetitive reverse voltage of about 17 – 19 V. Connect a diode by aniti-parallel connection so that reverse voltage will not be applied to the GTO thyristor. If the reverse conducting GTO thyristor is used, this instruction shall not be applied because a diod ...
... The anode short GTO thyristor has a peak repetitive reverse voltage of about 17 – 19 V. Connect a diode by aniti-parallel connection so that reverse voltage will not be applied to the GTO thyristor. If the reverse conducting GTO thyristor is used, this instruction shall not be applied because a diod ...
SIGC16T120C IGBT Chip in NPT-technology
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Inf ...
1N4148WS / BAV16WS
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
OPAx132 High-Speed FET-Input Operational Amplifiers (Rev. B)
... Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design impleme ...
... Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design impleme ...
![Application Note [AN-004] Resistive Touch Panel Technologies](http://s1.studyres.com/store/data/000087727_1-d4cbc23776babe9b0e906bacf50dca62-300x300.png)
Application Note [AN-004] Resistive Touch Panel Technologies
... connections at the two conductive layers: Two bus bars for each layer. A 4-wire Touch Panel usually has the following set up (see figure 4): At the bottom layer, the bus bars are on the left side and on the right side. The left connection is called X Left (XL) and the right connection is called X Ri ...
... connections at the two conductive layers: Two bus bars for each layer. A 4-wire Touch Panel usually has the following set up (see figure 4): At the bottom layer, the bus bars are on the left side and on the right side. The left connection is called X Left (XL) and the right connection is called X Ri ...
Triode
A triode is an electronic amplifying vacuum tube (or valve in British English) consisting of three electrodes inside an evacuated glass envelope: a heated filament or cathode, a grid, and a plate (anode). Invented in 1906 by Lee De Forest by adding a grid to the Fleming valve, the triode was the first electronic amplification device and the ancestor of other types of vacuum tubes such as the tetrode and pentode. Its invention founded the electronics age, making possible amplified radio technology and long-distance telephony. Triodes were widely used in consumer electronics devices such as radios and televisions until the 1970s, when transistors replaced them. Today, their main remaining use is in high-power RF amplifiers in radio transmitters and industrial RF heating devices. The word is derived from the Greek τρίοδος, tríodos, from tri- (three) and hodós (road, way), originally meaning the place where three roads meet.