Datasheet - Allied Electronics
... To use at temperature above TA=25C reduce 5.4mW/°C. To use at temperature above TA=25C reduce 5.5mW/°C. To use at temperature above TA=25C reduce 4.7mW/°C. Mounted on a FR4 glass epoxy PCB 70mm×70mm×1.6mm (copper foil area less than 3%). The voltage difference between inverting input and non-inve ...
... To use at temperature above TA=25C reduce 5.4mW/°C. To use at temperature above TA=25C reduce 5.5mW/°C. To use at temperature above TA=25C reduce 4.7mW/°C. Mounted on a FR4 glass epoxy PCB 70mm×70mm×1.6mm (copper foil area less than 3%). The voltage difference between inverting input and non-inve ...
Motivating Software-Driven Current Balancing in Flexible Voltage-Stacked Multicore Processors
... The most common mechanism for such adaptation is dynamic voltage and frequency scaling (DVFS). Since power and operating frequency scale differently with supply voltage, dynamically adjusting voltage and frequency allows for operation at different points of the power/performance tradeoff space. Howe ...
... The most common mechanism for such adaptation is dynamic voltage and frequency scaling (DVFS). Since power and operating frequency scale differently with supply voltage, dynamically adjusting voltage and frequency allows for operation at different points of the power/performance tradeoff space. Howe ...
FAN4800AU/CU PFC/ PWM Controller Combination FAN48 00AU/CU —
... inversely proportional to VRMS , as shown in Figure 29, to implement line feed-forward. This automatically adjusts the reference of current control error amplifier according to the line voltage, such that the input power of PFC converter is not changed with line voltage (as shown in Figure 30). ...
... inversely proportional to VRMS , as shown in Figure 29, to implement line feed-forward. This automatically adjusts the reference of current control error amplifier according to the line voltage, such that the input power of PFC converter is not changed with line voltage (as shown in Figure 30). ...
LT3022/LT3022-1.2 LT3022-1.5/LT3022-1.8
... junction temperature range is assured by design, characterization and correlation with statistical process controls. The LT3022I regulators are guaranteed over the full –40°C to 125°C operating junction temperature range. High junction temperatures degrade operating lifetime. Operating lifetime is d ...
... junction temperature range is assured by design, characterization and correlation with statistical process controls. The LT3022I regulators are guaranteed over the full –40°C to 125°C operating junction temperature range. High junction temperatures degrade operating lifetime. Operating lifetime is d ...
MAX16055 Ultra-Small, Hex Voltage, Microprocessor Supervisor General Description
... monitored IN_ voltage drops below the specified reset threshold. RESET remains low for the reset timeout period of 140ms (min) after all inputs rise above the respective thresholds (Figure 2). The RESET output is open drain with a weak internal pullup to the monitored IN1 supply (70µA typ). For many ...
... monitored IN_ voltage drops below the specified reset threshold. RESET remains low for the reset timeout period of 140ms (min) after all inputs rise above the respective thresholds (Figure 2). The RESET output is open drain with a weak internal pullup to the monitored IN1 supply (70µA typ). For many ...
Blocking Oscillation Due to Combination of Discrete and Continuous
... Single-electron tunneling is known to transfer electric charge in units of the fundamental charge e through tiny (nano-scale) tunnel junctions. So far, many single-electron devices, such as a singleelectron transistor, a single-electron turnstile, and a single-electron pump, have been proposed and d ...
... Single-electron tunneling is known to transfer electric charge in units of the fundamental charge e through tiny (nano-scale) tunnel junctions. So far, many single-electron devices, such as a singleelectron transistor, a single-electron turnstile, and a single-electron pump, have been proposed and d ...
BA18BC0FP
... oscillate if the ESR is too high or too low, so refer to the ESR characteristics in Fig.22 and operate the IC within the stable region. Use a capacitor within a capacitance between 22μF and 1,000μF. Below figure, it is ESR-to-Io stability Area characteristics, measured by 22μＦ-ceramic-capacitor and ...
... oscillate if the ESR is too high or too low, so refer to the ESR characteristics in Fig.22 and operate the IC within the stable region. Use a capacitor within a capacitance between 22μF and 1,000μF. Below figure, it is ESR-to-Io stability Area characteristics, measured by 22μＦ-ceramic-capacitor and ...
Section 1 TVS Diode Definition and General Electronics Applications
... • The opening of the primary circuit of a transformer generates extreme voltage transients. Transients in excess of ten times normal voltage have been observed across power semiconductors when this type of switching occurs. Fault with inductive power source • If a short develops on any power system, ...
... • The opening of the primary circuit of a transformer generates extreme voltage transients. Transients in excess of ten times normal voltage have been observed across power semiconductors when this type of switching occurs. Fault with inductive power source • If a short develops on any power system, ...
AN1709 APPLICATION NOTE EMC DESIGN GUIDE FOR ST MICROCONTROLLERS
... power supply to recover the initial state. NOTES 1 The overstress can be a voltage or current surge, an excessive rate of change of current or voltage, or any other abnormal condition that causes the parasitic thyristor structure to become self-sustaining. 2 Latch-up will not damage the device if th ...
... power supply to recover the initial state. NOTES 1 The overstress can be a voltage or current surge, an excessive rate of change of current or voltage, or any other abnormal condition that causes the parasitic thyristor structure to become self-sustaining. 2 Latch-up will not damage the device if th ...
Three-dimensional manipulation of carbon nanotubes under a
... brought to another of the loaded tips and pulled or burned in two leaving sharp CNTs attached to two tips. It is believed that such a bundle has been attached to the tip in figure 2(b) as it is clearly seen to widen for a short segment of its length. The free end of this tube was then attached to an ...
... brought to another of the loaded tips and pulled or burned in two leaving sharp CNTs attached to two tips. It is believed that such a bundle has been attached to the tip in figure 2(b) as it is clearly seen to widen for a short segment of its length. The free end of this tube was then attached to an ...
S270-30-1 (Discontinued)
... Figure 6 shows the coordinated operation of an upline recloser with a downline TVS sectionalizer. In the following example, the TVS operates to lockout to isolate the fault during the fast operations of the upline recloser and utilizes the settings illustrated in Figure 5. When the recloser senses a ...
... Figure 6 shows the coordinated operation of an upline recloser with a downline TVS sectionalizer. In the following example, the TVS operates to lockout to isolate the fault during the fast operations of the upline recloser and utilizes the settings illustrated in Figure 5. When the recloser senses a ...
![Keyword: [GND Clamp Reference]](http://s1.studyres.com/store/data/000976400_1-7eb758db5d5f15c9e7ccb52b05ad3a84-300x300.png)
Keyword: [GND Clamp Reference]
... • Description: Defines a power supply rail other than 0 V as the reference voltage for the [GND Clamp] I-V data. If this keyword is not present, the voltage data points in the [GND Clamp] I-V table are referenced to 0 V. Would be nice to add • Other Notes: The I-V table of the [GND Clamp] structure ...
... • Description: Defines a power supply rail other than 0 V as the reference voltage for the [GND Clamp] I-V data. If this keyword is not present, the voltage data points in the [GND Clamp] I-V table are referenced to 0 V. Would be nice to add • Other Notes: The I-V table of the [GND Clamp] structure ...
AVR UPGRADES Jussi Rantoja Technology and Communication
... on the generator voltage and it requires a separate supply for the short circuit situations. This short circuit excitation is taken from appropriate boost current transformers to maintain the sufficient excitation when the generator voltage drops. With this kind of excitation system the voltage buil ...
... on the generator voltage and it requires a separate supply for the short circuit situations. This short circuit excitation is taken from appropriate boost current transformers to maintain the sufficient excitation when the generator voltage drops. With this kind of excitation system the voltage buil ...
Triode
A triode is an electronic amplifying vacuum tube (or valve in British English) consisting of three electrodes inside an evacuated glass envelope: a heated filament or cathode, a grid, and a plate (anode). Invented in 1906 by Lee De Forest by adding a grid to the Fleming valve, the triode was the first electronic amplification device and the ancestor of other types of vacuum tubes such as the tetrode and pentode. Its invention founded the electronics age, making possible amplified radio technology and long-distance telephony. Triodes were widely used in consumer electronics devices such as radios and televisions until the 1970s, when transistors replaced them. Today, their main remaining use is in high-power RF amplifiers in radio transmitters and industrial RF heating devices. The word is derived from the Greek τρίοδος, tríodos, from tri- (three) and hodós (road, way), originally meaning the place where three roads meet.