Student Biographies
... such as the Fourier series and Fourier transform (we will only introduce the topic here and come back to it in future courses) These tools provide the means for representing a voltage signal vs(t) or a current signal is(t) as the sum of sine-wave signals of different frequencies and amplitudes This ...
... such as the Fourier series and Fourier transform (we will only introduce the topic here and come back to it in future courses) These tools provide the means for representing a voltage signal vs(t) or a current signal is(t) as the sum of sine-wave signals of different frequencies and amplitudes This ...
Class I, II, and III Dielectric Capacitor Codes
... The number of electrons it can store in this field determines its capacitance size The units of Capacitance are measured in Farads [F] and the symbol for Capacitance is C. Capacitors act like springs Opposes DC but passes high frequency AC Easy to flow during change but is open when DC ...
... The number of electrons it can store in this field determines its capacitance size The units of Capacitance are measured in Farads [F] and the symbol for Capacitance is C. Capacitors act like springs Opposes DC but passes high frequency AC Easy to flow during change but is open when DC ...
Reverse Conduction IGBT for Inductive Cooking
... inverters in commercial and residential applications requires advanced control systems and new generations of power semiconductors. To optimize the electrical behavior of these devices new generations of semiconductors are rapidly developed by Infineon these days. IGBTs from 600V to 1600V are widely ...
... inverters in commercial and residential applications requires advanced control systems and new generations of power semiconductors. To optimize the electrical behavior of these devices new generations of semiconductors are rapidly developed by Infineon these days. IGBTs from 600V to 1600V are widely ...
ISL24202 - Intersil
... the R1 - R2 resistor divider (Figure 5). The OUT voltage can then be buffered by an external amplifier (A2) to generate a buffered output voltage (VCOM) capable of driving the VCOM input of an LCD panel. The amount of current sunk is controlled by the setting of the DCP, which is recalled at power-u ...
... the R1 - R2 resistor divider (Figure 5). The OUT voltage can then be buffered by an external amplifier (A2) to generate a buffered output voltage (VCOM) capable of driving the VCOM input of an LCD panel. The amount of current sunk is controlled by the setting of the DCP, which is recalled at power-u ...
ZLLS410 Product Summary Features and Benefits
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
BDTIC www.BDTIC.com/infineon ICB2FL01G
... threshold is exceeded for longer than 500ns during preheat or run mode, an inverter over current is detected and causes a latched shut down of the IC. The ignition control is activated if the sensed slope at the LSCS pin reaches typically 205 mV/µs ± 25 mV/µs and exceeds the 0.8V threshold. This sto ...
... threshold is exceeded for longer than 500ns during preheat or run mode, an inverter over current is detected and causes a latched shut down of the IC. The ignition control is activated if the sensed slope at the LSCS pin reaches typically 205 mV/µs ± 25 mV/µs and exceeds the 0.8V threshold. This sto ...
lt1763.pdf
... 500mA of output current with a dropout voltage of 300mV. Designed for use in battery-powered systems, the low 30µA quiescent current makes them an ideal choice. Quiescent current is well controlled; it does not rise in dropout as it does with many other regulators. A key feature of the LT1763 regula ...
... 500mA of output current with a dropout voltage of 300mV. Designed for use in battery-powered systems, the low 30µA quiescent current makes them an ideal choice. Quiescent current is well controlled; it does not rise in dropout as it does with many other regulators. A key feature of the LT1763 regula ...
ABB Kuhlman 69000 Volt Instrument Transformers
... is a station service voltage transformer with power and can be supplied with metering rated secondary winding(s). It provides a convenient and cost effective means of serving small power and/or metering requirements directly from a transmission line. Standard 125/250V nominal power winding designs a ...
... is a station service voltage transformer with power and can be supplied with metering rated secondary winding(s). It provides a convenient and cost effective means of serving small power and/or metering requirements directly from a transmission line. Standard 125/250V nominal power winding designs a ...
LT1763CS8 - EDG uchicago
... 500mA of output current with a dropout voltage of 300mV. Designed for use in battery-powered systems, the low 30µA quiescent current makes them an ideal choice. Quiescent current is well controlled; it does not rise in dropout as it does with many other regulators. A key feature of the LT1763 regula ...
... 500mA of output current with a dropout voltage of 300mV. Designed for use in battery-powered systems, the low 30µA quiescent current makes them an ideal choice. Quiescent current is well controlled; it does not rise in dropout as it does with many other regulators. A key feature of the LT1763 regula ...
AN3119
... feedback failure is assumed. In this case the device is latched off. Normal operation can be resumed only by cycling Vcc, bringing its value lower than 6 V, before moving up to turn-on the threshold. Additionally, if the voltage on pin #7 (PFC_OK) is tied below 0.23 V, the L6563S is shut down. To re ...
... feedback failure is assumed. In this case the device is latched off. Normal operation can be resumed only by cycling Vcc, bringing its value lower than 6 V, before moving up to turn-on the threshold. Additionally, if the voltage on pin #7 (PFC_OK) is tied below 0.23 V, the L6563S is shut down. To re ...
AN1946
... Based on the above BEMF detection principle, several methods are available to precisely determine the BEMF zero crossing point. All these methods have advantages and drawbacks which will be discussed in the next section. These methods also take into account the fact that in most cases the neutral po ...
... Based on the above BEMF detection principle, several methods are available to precisely determine the BEMF zero crossing point. All these methods have advantages and drawbacks which will be discussed in the next section. These methods also take into account the fact that in most cases the neutral po ...
MAX5060/MAX5061 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers General Description
... provides optimum transient response. An internal regulator enables operation with 4.75V to 5.5V or 7V to 28V input voltage ranges. The high switching frequency, up to 1.5MHz, allows the use of low-output inductor values and input capacitor values. This accommodates the use of PC-board-embedded plana ...
... provides optimum transient response. An internal regulator enables operation with 4.75V to 5.5V or 7V to 28V input voltage ranges. The high switching frequency, up to 1.5MHz, allows the use of low-output inductor values and input capacitor values. This accommodates the use of PC-board-embedded plana ...
Insulated Gate Bipolar Transistor
... much higher current density compared to a power MOSFET. If the shorting resistance between the base and emitter of the npn transistor is small, the n+ emitter p-base junction does not become forward biased and therefore the parasitic npn transistor is not active and can be deleted from the equivalen ...
... much higher current density compared to a power MOSFET. If the shorting resistance between the base and emitter of the npn transistor is small, the n+ emitter p-base junction does not become forward biased and therefore the parasitic npn transistor is not active and can be deleted from the equivalen ...
LT6016/LT6017 - Dual/Quad 3.2MHz, 0.8V/μs Low Power, Over-The-Top Precision Op Amp
... may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Voltages applied are with respect to V–. The inputs are tested to the Absolute Maximum Rating by applying –25V (relative to V–) to each ...
... may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Voltages applied are with respect to V–. The inputs are tested to the Absolute Maximum Rating by applying –25V (relative to V–) to each ...
Electrical measurements
... Moreover, we have not said anything about the concentration of charge carriers, which depends on materials, temperature and composition. While these are the interesting parameters for us as chemists, physicists or materials scientists, this course is not so much about that. Instead it is about the m ...
... Moreover, we have not said anything about the concentration of charge carriers, which depends on materials, temperature and composition. While these are the interesting parameters for us as chemists, physicists or materials scientists, this course is not so much about that. Instead it is about the m ...
Document
... If the polarity is reversed (Figure 15-27b), electrons are drawn out of n-Si and holes are drawn out of p-Si, leaving a thin depletion region devoid of charge carriers near the pn junction. The diode is reverse biased and does not conduct current in the reverse direction. ...
... If the polarity is reversed (Figure 15-27b), electrons are drawn out of n-Si and holes are drawn out of p-Si, leaving a thin depletion region devoid of charge carriers near the pn junction. The diode is reverse biased and does not conduct current in the reverse direction. ...
Triode
A triode is an electronic amplifying vacuum tube (or valve in British English) consisting of three electrodes inside an evacuated glass envelope: a heated filament or cathode, a grid, and a plate (anode). Invented in 1906 by Lee De Forest by adding a grid to the Fleming valve, the triode was the first electronic amplification device and the ancestor of other types of vacuum tubes such as the tetrode and pentode. Its invention founded the electronics age, making possible amplified radio technology and long-distance telephony. Triodes were widely used in consumer electronics devices such as radios and televisions until the 1970s, when transistors replaced them. Today, their main remaining use is in high-power RF amplifiers in radio transmitters and industrial RF heating devices. The word is derived from the Greek τρίοδος, tríodos, from tri- (three) and hodós (road, way), originally meaning the place where three roads meet.