MMSTA06
... The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants cont ...
... The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants cont ...
AN107 - Extending the Input Voltage Range of
... The voltage range of Linear Technology’s PowerPath® circuits can be easily extended with just a few components, thus allowing them to meet the needs of virtually all applications. This application note presents solutions for circuits that must withstand large negative voltages, a reverse adapter inp ...
... The voltage range of Linear Technology’s PowerPath® circuits can be easily extended with just a few components, thus allowing them to meet the needs of virtually all applications. This application note presents solutions for circuits that must withstand large negative voltages, a reverse adapter inp ...
Superconducting single-electron push–pull amplifier stage
... This amplifier stage can either be used as an electrometer to detect charge, or as a voltage amplifier. Used as an electrometer, superconducting SET’s have higher charge sensitivities than normal SET’s.3 A charge sensitivity of 10⫺4 e/ 冑Hz at 10 Hz is typically achieved.4 When using such an electrom ...
... This amplifier stage can either be used as an electrometer to detect charge, or as a voltage amplifier. Used as an electrometer, superconducting SET’s have higher charge sensitivities than normal SET’s.3 A charge sensitivity of 10⫺4 e/ 冑Hz at 10 Hz is typically achieved.4 When using such an electrom ...
RHRP8120 - Intranet
... characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. ...
... characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. ...
BEKG1113 PRINCIPLE OF ELECTRICAL AND ELECTRONICS
... • When current is forced through a resistance, work is said have been done. Power is the rate of working, represented by "P". Energy is the capacity to do work. • Power is energy per time or the rate of working, represented by "P". The standard unit used in electricity is the Watt (W) = 1 Joule / se ...
... • When current is forced through a resistance, work is said have been done. Power is the rate of working, represented by "P". Energy is the capacity to do work. • Power is energy per time or the rate of working, represented by "P". The standard unit used in electricity is the Watt (W) = 1 Joule / se ...
File
... The intrinsic semi-conductor has little current conduction capability at room temperature. To be useful in electronic devices, the pure semi-conductor must be altered so as to significantly increase its conducting properties. This is achieved by adding a small amount of suitable metallic impurity to ...
... The intrinsic semi-conductor has little current conduction capability at room temperature. To be useful in electronic devices, the pure semi-conductor must be altered so as to significantly increase its conducting properties. This is achieved by adding a small amount of suitable metallic impurity to ...
Low voltage fast-switching NPN power transistors
... Low voltage fast-switching NPN power transistors ...
... Low voltage fast-switching NPN power transistors ...
Gen Chem Redox Reactions Summary
... i. The electrons are “pumped” from the anode towards the cathode, supplying the resistance (bulb, motor, cell, etc.). ii. Since the electrons leave the anode, it is designated with a positive charge. The electrons are built up at the cathode; therefore, the cathode is often denoted with a positive s ...
... i. The electrons are “pumped” from the anode towards the cathode, supplying the resistance (bulb, motor, cell, etc.). ii. Since the electrons leave the anode, it is designated with a positive charge. The electrons are built up at the cathode; therefore, the cathode is often denoted with a positive s ...
4. Applications of diodes
... 0.5 volt more positive than cathode. We call it the forward voltage drop. The reverse current is measured in nanoampers and 1nA=1*10-9A. It is so small in comparison to mA, that can be neglected until we reach the reverse breakdown voltage. Typically it is approximately 75V and normally we never su ...
... 0.5 volt more positive than cathode. We call it the forward voltage drop. The reverse current is measured in nanoampers and 1nA=1*10-9A. It is so small in comparison to mA, that can be neglected until we reach the reverse breakdown voltage. Typically it is approximately 75V and normally we never su ...
4. Applications of diodes
... 0.5 volt more positive than cathode. We call it the forward voltage drop. The reverse current is measured in nanoampers and 1nA=1*10-9A. It is so small in comparison to mA, that can be neglected until we reach the reverse breakdown voltage. Typically it is approximately 75V and normally we never su ...
... 0.5 volt more positive than cathode. We call it the forward voltage drop. The reverse current is measured in nanoampers and 1nA=1*10-9A. It is so small in comparison to mA, that can be neglected until we reach the reverse breakdown voltage. Typically it is approximately 75V and normally we never su ...
HTL-CU-230 g Capacitor storage
... Very often a secure auxiliary voltage supply (rectifier, battery) is not economical for a smaller sized switchboard and for such applications the HTL-CU is a very effective alternative. As an additional device it provides the necessary energy reserve to buffer the aux. voltage. By this capacitor sto ...
... Very often a secure auxiliary voltage supply (rectifier, battery) is not economical for a smaller sized switchboard and for such applications the HTL-CU is a very effective alternative. As an additional device it provides the necessary energy reserve to buffer the aux. voltage. By this capacitor sto ...
NP40 - Lumel
... Graphical presentation of data in a waveform and vector diagram. Record of events: dips, swells, overvoltages. Power quality according to EN-50160 standard or user-defined limit (registration time from 2 hours to 7 days). Registration of user-defined parameters in the 8GB internal memory (frequency ...
... Graphical presentation of data in a waveform and vector diagram. Record of events: dips, swells, overvoltages. Power quality according to EN-50160 standard or user-defined limit (registration time from 2 hours to 7 days). Registration of user-defined parameters in the 8GB internal memory (frequency ...
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio ...
... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio ...
Semiconductor devices Electrons and Holes Intrinsic conduction
... because majority carriers are able to cross the junction –electrons from the n to the p-side and the holes in the opposite direction. The junction is thus forward biased, a small current also flows because of minority carriers that adds to the main majority carriers. The resistance of the junction i ...
... because majority carriers are able to cross the junction –electrons from the n to the p-side and the holes in the opposite direction. The junction is thus forward biased, a small current also flows because of minority carriers that adds to the main majority carriers. The resistance of the junction i ...
CNT devices
... There is a clear difference in the inverse subthreshold slope for the case of sweeping all gate segments together (S=400 mV/dec) versus sweeping only the inner segments (S=180 mV/dec). We attribute the observed change in S to a change from Schottky barrier modulation to bulk switching. (b) shows li ...
... There is a clear difference in the inverse subthreshold slope for the case of sweeping all gate segments together (S=400 mV/dec) versus sweeping only the inner segments (S=180 mV/dec). We attribute the observed change in S to a change from Schottky barrier modulation to bulk switching. (b) shows li ...
CA800011EN
... the hazards associated with manual internal tap changing of distribution transformers because line crews need not be exposed to high-voltage conductors and hot transformer fluid. They also eliminate the need to dismount pole-type transformers for voltage adjustment and prevent exposure of the transf ...
... the hazards associated with manual internal tap changing of distribution transformers because line crews need not be exposed to high-voltage conductors and hot transformer fluid. They also eliminate the need to dismount pole-type transformers for voltage adjustment and prevent exposure of the transf ...
Triode
A triode is an electronic amplifying vacuum tube (or valve in British English) consisting of three electrodes inside an evacuated glass envelope: a heated filament or cathode, a grid, and a plate (anode). Invented in 1906 by Lee De Forest by adding a grid to the Fleming valve, the triode was the first electronic amplification device and the ancestor of other types of vacuum tubes such as the tetrode and pentode. Its invention founded the electronics age, making possible amplified radio technology and long-distance telephony. Triodes were widely used in consumer electronics devices such as radios and televisions until the 1970s, when transistors replaced them. Today, their main remaining use is in high-power RF amplifiers in radio transmitters and industrial RF heating devices. The word is derived from the Greek τρίοδος, tríodos, from tri- (three) and hodós (road, way), originally meaning the place where three roads meet.