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Effects of the Thickness of Niobium Surface Oxide Layers on Field

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title of article in english

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... In the present work, we study resonant modes excited on a doped silicon-dielectric interface. For this typical material, it is included the contribution of charge carrier concentrations, N in the range 3x1019 5x1020cm-3. In this way, the interaction produced between matter and light is controlled di ...
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Sessile drop technique

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