G. Remote Start/Stop Switch Connections The control is supplied
... prevent full speed runaway in the event the main power transistor fails. However, this safety circuit is not infallible and may itself fail to operate and therefore allow a full speed runaway condition to exist. The installer of this product should take proper precautions to include other means to p ...
... prevent full speed runaway in the event the main power transistor fails. However, this safety circuit is not infallible and may itself fail to operate and therefore allow a full speed runaway condition to exist. The installer of this product should take proper precautions to include other means to p ...
GE Control Catalog - Section 3: Lighting Contactors
... 1. Latches after contactor command and removes coil from circuit for noise-free operation 2. Eliminates all coil losses after contactor is latched Control Module 1. Coil operation and control circuit at same or different voltages 2. Allows longer control wiring runs 3. Microprocessor validates contr ...
... 1. Latches after contactor command and removes coil from circuit for noise-free operation 2. Eliminates all coil losses after contactor is latched Control Module 1. Coil operation and control circuit at same or different voltages 2. Allows longer control wiring runs 3. Microprocessor validates contr ...
MAX1570 White LED Current Regulator with 1x/1.5x High-Efficiency Charge Pump General Description
... The MAX1570 includes soft-start circuitry to limit inrush current at turn-on. When starting up with an output voltage that is not near the input voltage, the output capacitor is charged directly from the input with a DAC ramped current source (with no charge-pump action) until the output voltage is ...
... The MAX1570 includes soft-start circuitry to limit inrush current at turn-on. When starting up with an output voltage that is not near the input voltage, the output capacitor is charged directly from the input with a DAC ramped current source (with no charge-pump action) until the output voltage is ...
Lecture Notes: Chapter 5 part 1
... VGG sets the reverse-bias voltage between gate and source. JFET is always operated with the gate-source pn junction reversebiased. Reverse-biased of gate-source junction with negative gate voltage produce a depletion region along pn junction – increase resistance by restricting the channel width ...
... VGG sets the reverse-bias voltage between gate and source. JFET is always operated with the gate-source pn junction reversebiased. Reverse-biased of gate-source junction with negative gate voltage produce a depletion region along pn junction – increase resistance by restricting the channel width ...
Transformer Installation, Operation, and Maintenance Manual
... Electrical potentials hazardous to human life can exist within this equipment when energized. Disconnect all input power before opening case or touching internal parts. Use proper lock-out/tag-out procedures. The information contained herein may not cover all variations in equipment or provide for a ...
... Electrical potentials hazardous to human life can exist within this equipment when energized. Disconnect all input power before opening case or touching internal parts. Use proper lock-out/tag-out procedures. The information contained herein may not cover all variations in equipment or provide for a ...
LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset
... This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasi ...
... This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasi ...
section 16
... The HMI must communicate with the pre-programmed CPU and act as the local master. Using the touch screen HMI, the user must be able to navigate back and forth between the elevation and one-line views of the LVS lineup. Utilizing the elevation or one-line screens, the user must be able to select (tou ...
... The HMI must communicate with the pre-programmed CPU and act as the local master. Using the touch screen HMI, the user must be able to navigate back and forth between the elevation and one-line views of the LVS lineup. Utilizing the elevation or one-line screens, the user must be able to select (tou ...
Micronote 130
... When further comparing these VC values with EQ 1, the PPP will be less than or equal to 1665 W at 6.4/83 μs (500 W at 10/1000 μs) when VC 31.0 V or VC 269 V. As a result, the TVS device will also meet the requirements of the DO-160D specification for Pin Injection tests of Waveform 4 at Level 3 ...
... When further comparing these VC values with EQ 1, the PPP will be less than or equal to 1665 W at 6.4/83 μs (500 W at 10/1000 μs) when VC 31.0 V or VC 269 V. As a result, the TVS device will also meet the requirements of the DO-160D specification for Pin Injection tests of Waveform 4 at Level 3 ...
FT232H MPSSE Example - USB Current Meter using the
... amplifier. In this application, the Maxim MAX4172 was used. The datasheet can be found in the Appendix A – References section. This has further information on the device and recommendations for layout etc. The current flows between the 5V (VBUS) pins of the USB ‘In’ and USB ‘Out’ connectors through ...
... amplifier. In this application, the Maxim MAX4172 was used. The datasheet can be found in the Appendix A – References section. This has further information on the device and recommendations for layout etc. The current flows between the 5V (VBUS) pins of the USB ‘In’ and USB ‘Out’ connectors through ...
TDA1083 - TU Chemnitz
... 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as the ...
... 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as the ...
Fluke CNX 3000 Series Test Tools
... • Capture readings at different intervals, with user-set recording intervals from one second to one hour • Choose the module(s) that work best for your applications ...
... • Capture readings at different intervals, with user-set recording intervals from one second to one hour • Choose the module(s) that work best for your applications ...
ECE 469 Power Electronics Lab Manual
... • GROUND! Be aware of which connections are grounded, and which are not. The most common cause of equipment damage is unintended shorts to ground. Remember that oscilloscopes are designed to measure voltage relative to ground, not between two arbitrary points. • RATINGS! Before applying power, check ...
... • GROUND! Be aware of which connections are grounded, and which are not. The most common cause of equipment damage is unintended shorts to ground. Remember that oscilloscopes are designed to measure voltage relative to ground, not between two arbitrary points. • RATINGS! Before applying power, check ...
AN1158: Designing with Intersil Digitally Controlled Potentiometers
... 1mA limit was required due to electromigration concerns with the metallization process. This was an industry wide reliability concern that sparked considerable research several years ago. For semiconductor devices, high currents, coupled with small cross-sectional areas for aluminum metal lines, can ...
... 1mA limit was required due to electromigration concerns with the metallization process. This was an industry wide reliability concern that sparked considerable research several years ago. For semiconductor devices, high currents, coupled with small cross-sectional areas for aluminum metal lines, can ...
Sep 1992 Design Techniques for Electrostatic Discharge Protection
... (CENELEC). The standard for ESD, IEC-801-2, is now under review and will become mandatory in 1996. ...
... (CENELEC). The standard for ESD, IEC-801-2, is now under review and will become mandatory in 1996. ...
DAC7617 数据资料 dataSheet 下载
... The output of the DAC7617 can swing to ground. Note that the settling time of the output op amp will be longer with voltages very near ground. Additionally, care must be taken when measuring the zero-scale error. If the output amplifier has a negative offset, the output voltage may not change for th ...
... The output of the DAC7617 can swing to ground. Note that the settling time of the output op amp will be longer with voltages very near ground. Additionally, care must be taken when measuring the zero-scale error. If the output amplifier has a negative offset, the output voltage may not change for th ...
Frequency and power dependence of spin
... by LPE. The thickness of the YIG is only 200 nm, which is very low compared to other studies.6,11,12,20,21 The YIG layer has a roughness of 0.4 nm. X-ray diffraction was used in order to estimate the quality of the thin layer of YIG. The spectrum (not shown) shows epitaxial growth of YIG oriented al ...
... by LPE. The thickness of the YIG is only 200 nm, which is very low compared to other studies.6,11,12,20,21 The YIG layer has a roughness of 0.4 nm. X-ray diffraction was used in order to estimate the quality of the thin layer of YIG. The spectrum (not shown) shows epitaxial growth of YIG oriented al ...
Introduction to Power Electronics
... Power electronics makes up a large part of engineering and has close connections with many areas of physics, chemistry, and mechanics. It establishes a rapidly expanding field in electrical engineering and a scope of its technology covers a wide spectrum. Power applications with electronic converter ...
... Power electronics makes up a large part of engineering and has close connections with many areas of physics, chemistry, and mechanics. It establishes a rapidly expanding field in electrical engineering and a scope of its technology covers a wide spectrum. Power applications with electronic converter ...
Types of Wound Film Capacitors
... additional categories metal and non-metallic. Metal tubular capacitors generally use a non-ferrous tube, sealed on one or both end with a glass-to-metal seal. This configuration is typically used in low voltage applications (>1000 V), due to lack of adequate space for insulation between the capacito ...
... additional categories metal and non-metallic. Metal tubular capacitors generally use a non-ferrous tube, sealed on one or both end with a glass-to-metal seal. This configuration is typically used in low voltage applications (>1000 V), due to lack of adequate space for insulation between the capacito ...
The twin-transistor noise-tolerant dynamic circuit technique
... noise is the general term used to designate any phenomenon that causes the voltage at a nonswitching node to deviate from its nominal value [1]. It thus includes [2] power-supply noise caused by circuit switching, crosstalk noise due to capacitive coupling between neighboring interconnects, and fluc ...
... noise is the general term used to designate any phenomenon that causes the voltage at a nonswitching node to deviate from its nominal value [1]. It thus includes [2] power-supply noise caused by circuit switching, crosstalk noise due to capacitive coupling between neighboring interconnects, and fluc ...
F047023943
... at nanoscale. An effect called drain-induced barrier lowering (DIBL) takes place when a high-drain voltage is applied to a short-channel device and the source injects carriers into the channel surface independent of gate voltage. Gate oxide tunneling of electrons can result in leakage when there is ...
... at nanoscale. An effect called drain-induced barrier lowering (DIBL) takes place when a high-drain voltage is applied to a short-channel device and the source injects carriers into the channel surface independent of gate voltage. Gate oxide tunneling of electrons can result in leakage when there is ...
Evaluates: MAX44242 MAX44242 Evaluation Kit General Description Procedure
... output voltage of the TIA is the input current multiplied by the feedback resistor: VOUT = (IIN + IBIAS ) × R4 + VOS where R4 is installed as a 10kΩ resistor, IIN is defined as the input current source applied at the INAM pad, IBIAS is the input bias current, and VOS is the input offset voltage of t ...
... output voltage of the TIA is the input current multiplied by the feedback resistor: VOUT = (IIN + IBIAS ) × R4 + VOS where R4 is installed as a 10kΩ resistor, IIN is defined as the input current source applied at the INAM pad, IBIAS is the input bias current, and VOS is the input offset voltage of t ...
Stray voltage
Stray voltage is the occurrence of electrical potential between two objects that ideally should not have any voltage difference between them. Small voltages often exist between two grounded objects in separate locations, due to normal current flow in the power system. Large voltages can appear on the enclosures of electrical equipment due to a fault in the electrical power system, such as a failure of insulation.