Formation of two-dimensional electron gas at AlGaN
... High electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures have been widely studied and have exhibited outstanding performances in high-power and highfrequency devices. [1] Unlike conventional HEMTs made of modulation-doped semiconductor heterostructures, no intentional doping is ...
... High electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures have been widely studied and have exhibited outstanding performances in high-power and highfrequency devices. [1] Unlike conventional HEMTs made of modulation-doped semiconductor heterostructures, no intentional doping is ...
Space Charge Accumulation in Polymeric High Voltage DC Cable
... been used worldwide for the transport of electrical energy. A cable system consists of a cable and its accessories, i.e. joints and terminations. Terminations are needed at the ends of the cable circuit, to grade the electric field and to connect the cable to the power line. Joints are required when ...
... been used worldwide for the transport of electrical energy. A cable system consists of a cable and its accessories, i.e. joints and terminations. Terminations are needed at the ends of the cable circuit, to grade the electric field and to connect the cable to the power line. Joints are required when ...
