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- Landis+Gyr
- Landis+Gyr

Design Example –7.1.
Design Example –7.1.

... Along the early days of radio, the tuned amplifier has been one of the most important subject of the electronic engineering. It has been used as input RF amplifiers of radio receivers tunable in a certain frequency range and as intermediate frequency (IF) amplifiers tuned to a fixed frequency. From ...
Amplifier Frequency
Amplifier Frequency

ABWR 8.3  Onsite Power Systems 8.3.1  AC Power Systems
ABWR 8.3 Onsite Power Systems 8.3.1 AC Power Systems

... that the ten Reactor Internal Pumps (RIPs) be powered by four independent buses. This will minimize large core flow reduction events and match the mechanical power generation systems which are mostly four trains (e.g. four feedwater pumps, four condensate pumps, four condensate booster pumps, four h ...
AD7785 3-Channel, Low Noise, Low Power, 20-Bit ∑
AD7785 3-Channel, Low Noise, Low Power, 20-Bit ∑

... These numbers are derived from the measured time taken by the data output to change 0.5 V when loaded with the circuit shown in Figure 2. The measured number is then extrapolated back to remove the effects of charging or discharging the 50 pF capacitor. This means that the times quoted in the timing ...
sadler_appnote
sadler_appnote

... UPS is constantly engaged, converting all incoming power to DC current that passes though the battery circuit and is then converted back to AC again. Equipment connected to the on-line UPS is electrically isolated from utility power and receives continuous highly regulated power. This design prevent ...
The Tuned Circuit LC Phase Modulator
The Tuned Circuit LC Phase Modulator

... that the distortion level would be less susceptible to the tuning of the first multiplier stage. Also from a practical point of view, a distortion level of 1% to 3% is very acceptable in the voice communication systems for which these radios were designed. In summary, I found no improvement that cou ...
Si photodiodes - Hamamatsu Photonics
Si photodiodes - Hamamatsu Photonics

... Figure 1-1 shows a cross section example of a Si photodiode. The P-type region (P-layer) at the photosensitive surface and the N-type region (N-layer) at the substrate form a PN junction which operates as a photoelectric converter. The usual P-layer for a Si photodiode is formed by selective diffusi ...
DS1804 NV Trimmer Potentiometer  FEATURES
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... VCC - Power Supply. The DS1804 will support supply voltages ranging from +2.7V to +5.5V. GND - Ground. H - High-Terminal Potentiometer. This is the high terminal of the potentiometer. It is not required that this terminal be connected to a potential greater than the L-terminal. Voltage applied to th ...
Electronic Devices and Circuits
Electronic Devices and Circuits

... valance electron (0.01 eV for Ge and 0.05 eV for Si). At room temperature almost all the fifth electrons from the donor impurity atom are raised to conduction band and hence the number of electrons in the conduction band increases significantly. Thus every antimony atom contributes to one conduction ...
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View File

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MT8880

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1 Series, 2 Series, 3 Series, and 4 Series Li-Ion

... For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environme ...
TCM320 - Wavelength Electronics
TCM320 - Wavelength Electronics

... appropriate J or K input connector. Both the thermocouple plug and connector are made of the same metals to minimize error. Using the “J” plug with the “K” input (or the “K” with the “J”) or using a different plug could affect the performance of the TCM-320. 5. Select the proper thermocouple using t ...
aerobix xl manual
aerobix xl manual

A write-time based memristive PUF for hardware security applications
A write-time based memristive PUF for hardware security applications

... signatures would no longer be unique. In the RO PUF mentioned above, the ring-oscillator frequency is dependent on parameters such as transistor sizing, which is known to be variable in the CMOS manufacturing process [7]. In the literature, the quality of a PUF is measured using a number of differen ...
LVD - Renesas e
LVD - Renesas e

...  Functions  Generates internal reset signal at power on  Compares supply voltage VDD and detection voltage VPOC VDD >= 1.51V ± 0.03V and generates internal reset signal when VDD < 1.50V ± 0.03V  CPU can also be released by LVD, selectable by an option byte  Current consumption already included ...
Using VRC_CTL to Control an External VDD_LV Supply on the
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... • The internal regulator (FPREG) is enabled and controls the voltage applied to the VDD_LV pins. On MPC5748G, an external ballast transistor is required to dissipate the power lost in going from the ballast supply voltage to the 1.25 V VDD_LV. • The VRC_CTL pin is controlled by the internal FREG and ...
INSTRUCTION MANUAL For RELAY TEST SET Model
INSTRUCTION MANUAL For RELAY TEST SET Model

Aalborg Universitet CMOS Power Amplifiers for Multi-Hop Communication Systems Aniktar, Hüseyin
Aalborg Universitet CMOS Power Amplifiers for Multi-Hop Communication Systems Aniktar, Hüseyin

EL2003 - Electric Circuits#
EL2003 - Electric Circuits#

... 1. Desoer and Kuh, Basic Circuit Theory, McGraw Hill , latest ed. ...
Subthreshold Dual Mode Logic
Subthreshold Dual Mode Logic

... We used only footed dynamic gates, since, as previously noted, an unfooted dynamic gate does not stand process variation. The results of the analysis are shown in Fig. 3. VDD varies from 0.2 to 0.6 V, and the minimum energy point (MEP) is marked with an “X.” The DML static mode demonstrated a lowest ...
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66xxA Series Operating Guide

Z4905147150
Z4905147150

... effects, introduced by the sleep transistor and its implementations on design performance, area, routability, overall power dissipation, and signal/power integrity. Sleep transistors are to reduce power and heat dissipation, but not to reduce leakage currents. Quality of sleep transistor design is o ...
AN4715, i.MX 6Solo Power Consumption Measurement
AN4715, i.MX 6Solo Power Consumption Measurement

... Therefore, it is not included in the i.MX 6Solo internal power analysis. The power of NVCC_DRAM is added for reference. The power consumption for these supplies, in different use cases, is provided in Table 3 through Table 12. NOTE Unless stated otherwise, all the measurements were taken on typical ...
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Power electronics



Power electronics is the application of solid-state electronics to the control and conversion of electric power. It also refers to a subject of research in electronic and electrical engineering which deals with the design, control, computation and integration of nonlinear, time-varying energy-processing electronic systems with fast dynamics.The first high power electronic devices were mercury-arc valves. In modern systems the conversion is performed with semiconductor switching devices such as diodes, thyristors and transistors, pioneered by R. D. Middlebrook and others beginning in the 1950s. In contrast to electronic systems concerned with transmission and processing of signals and data, in power electronics substantial amounts of electrical energy are processed. An AC/DC converter (rectifier) is the most typical power electronics device found in many consumer electronic devices, e.g. television sets, personal computers, battery chargers, etc. The power range is typically from tens of watts to several hundred watts. In industry a common application is the variable speed drive (VSD) that is used to control an induction motor. The power range of VSDs start from a few hundred watts and end at tens of megawatts.The power conversion systems can be classified according to the type of the input and output power AC to DC (rectifier) DC to AC (inverter) DC to DC (DC-to-DC converter) AC to AC (AC-to-AC converter)
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