Semiconductor Material & Devices
... NPN and PNP BJTs have same characteristics. The only difference is in their polarities of applied voltages. The polarities are reversed for the two types of transistor. ...
... NPN and PNP BJTs have same characteristics. The only difference is in their polarities of applied voltages. The polarities are reversed for the two types of transistor. ...
Scanning Tunneling Microscopy
... A sharp conductive tip is brought to within a few Angstroms of the surface of a conductor (sample). The surface is applied a bias voltage, Fermi levels shift The wave functions of the electrons in the tip overlap those of the sample surface Electrons tunnel from one surface to the other of l ...
... A sharp conductive tip is brought to within a few Angstroms of the surface of a conductor (sample). The surface is applied a bias voltage, Fermi levels shift The wave functions of the electrons in the tip overlap those of the sample surface Electrons tunnel from one surface to the other of l ...
Electron String Source of Highly Charged Ions: Studies and First
... % of the electron space charge was observed. The development of an axial ESIS to produce significantly higher accumulated electron and ion charge will necessitate the use of appropriately designed and cooled electron collecting surfaces (anodes), to handle the increased anode power dissipation. In t ...
... % of the electron space charge was observed. The development of an axial ESIS to produce significantly higher accumulated electron and ion charge will necessitate the use of appropriately designed and cooled electron collecting surfaces (anodes), to handle the increased anode power dissipation. In t ...
Electron-multiplying CCD
... the image array, the data is then quickly shifted in a parallel transfer to the adjacent CCD storage area of each pixel element. The storage portion of the pixel element is illustrated as a cluster of gray-scale elements covered with an opaque mask adjacent to the red, green, and blue photodiode ele ...
... the image array, the data is then quickly shifted in a parallel transfer to the adjacent CCD storage area of each pixel element. The storage portion of the pixel element is illustrated as a cluster of gray-scale elements covered with an opaque mask adjacent to the red, green, and blue photodiode ele ...
Reducing Crosstalk in Vertically
... Two op-amps have been designed: In the common-drain topology, Ib equals 1µA; In the others, Ib equals 38µA. ...
... Two op-amps have been designed: In the common-drain topology, Ib equals 1µA; In the others, Ib equals 38µA. ...
CCDs
... Diode junction: the n-type layer contains an excess of electrons that diffuse into the p-layer. The player contains an excess of holes that diffuse into the n-layer (depletion region, region where majority charges are ‘depleted’ relative to their concentrations well away from the junction’). The dif ...
... Diode junction: the n-type layer contains an excess of electrons that diffuse into the p-layer. The player contains an excess of holes that diffuse into the n-layer (depletion region, region where majority charges are ‘depleted’ relative to their concentrations well away from the junction’). The dif ...
Video camera tube
The video camera tube was a type of cathode ray tube used to capture the television image prior to the introduction of charge-coupled devices (CCDs) in the 1980s. Several different types of tubes were in use from the early 1930s to the 1980s.In these tubes, the cathode ray was scanned across a target which was illuminated by the scene to be broadcast. The resultant current was dependent on the brightness of the image on the target. The size of the striking ray was tiny compared to the size of the target, allowing 483 horizontal scan lines per image in the NTSC format, or 576 lines in PAL.