- Kamaljeeth Instrument
... Figure-1: The two depletion regions in an npn silicon transistor In Equation-1 the collector current is an exponential function of ICO, which is in turn a function of temperature; the value of the current doubles for every ten degree increase in the temperature. Figure-1 shows an npn silicon transis ...
... Figure-1: The two depletion regions in an npn silicon transistor In Equation-1 the collector current is an exponential function of ICO, which is in turn a function of temperature; the value of the current doubles for every ten degree increase in the temperature. Figure-1 shows an npn silicon transis ...
BAS16HT1G Small Signal Diode BAS16HT1G — Small Signal Diode Absolute Maximum Ratings
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
Segment hardware
... Repeaters are optional components used either to extend the length of a fieldbus segment or to increase the number of devices on a segment. They provide power and a clean communication signal for the extended part of the segment. A segment can have as many as four repeaters dividing the segment into ...
... Repeaters are optional components used either to extend the length of a fieldbus segment or to increase the number of devices on a segment. They provide power and a clean communication signal for the extended part of the segment. A segment can have as many as four repeaters dividing the segment into ...
MAX4223–MAX4228 1GHz, Low-Power, SOT23, Current-Feedback Amplifiers with Shutdown _______________General Description
... Performance). For 100% testing of these parameters, contact the factory. Note 6: Input Test Signal: 3.58MHz sine wave of amplitude 40IRE superimposed on a linear ramp (0IRE to 100IRE). IRE is a unit of video signal amplitude developed by the International Radio Engineers. 140IRE = 1V. Note 7: Assume ...
... Performance). For 100% testing of these parameters, contact the factory. Note 6: Input Test Signal: 3.58MHz sine wave of amplitude 40IRE superimposed on a linear ramp (0IRE to 100IRE). IRE is a unit of video signal amplitude developed by the International Radio Engineers. 140IRE = 1V. Note 7: Assume ...
AN-7513 Parallel Operation Of Semiconductor Switches
... of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein ...
... of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein ...
MAX544X Evaluation Kit Evaluates: MAX5441–MAX5444 General Description Features
... The EV kit connects one precision bipolar buffer (MAX9632) to the MAX5442 and one ultra-precision unipolar buffer (MAX44251) to the MAX5441. The EV kit comes with the +5V MAX5441AEUA+ and +5V MAX5442AEUB+ installed; however, it can also be used ...
... The EV kit connects one precision bipolar buffer (MAX9632) to the MAX5442 and one ultra-precision unipolar buffer (MAX44251) to the MAX5441. The EV kit comes with the +5V MAX5441AEUA+ and +5V MAX5442AEUB+ installed; however, it can also be used ...
FJAFS1720 ESBC Rated NPN Power Transistor ™
... The ESBC™ switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching, The ESBC™ configuration further minimizes the required driving power because it ...
... The ESBC™ switch is designed to be driven using off-theshelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching, The ESBC™ configuration further minimizes the required driving power because it ...
UMFT231XE USB to Full-Handshake UART Development Module
... USB suspend mode. The PWREN# CBUS function can be used to remove power from external circuitry whenever the FT231X is not enumerated. To implement a power switch using PWREN#, configure a P-Channel Power MOSFET to have a soft start by fitting a 10K pull-up, a 1K series resistor and a 100nF cap as sh ...
... USB suspend mode. The PWREN# CBUS function can be used to remove power from external circuitry whenever the FT231X is not enumerated. To implement a power switch using PWREN#, configure a P-Channel Power MOSFET to have a soft start by fitting a 10K pull-up, a 1K series resistor and a 100nF cap as sh ...
DS4266 DDR Clock Oscillator General Description Features
... and stability better than ±50ppm, including aging. Jitter performance is better than 0.7psRMS typically over a 12kHz to 20MHz bandwidth, and duty-cycle performance is better than 48%/52%. The DS4266 has an output frequency of 266MHz, and it supports LVDS and LVPECL output types. The DS4266 is constr ...
... and stability better than ±50ppm, including aging. Jitter performance is better than 0.7psRMS typically over a 12kHz to 20MHz bandwidth, and duty-cycle performance is better than 48%/52%. The DS4266 has an output frequency of 266MHz, and it supports LVDS and LVPECL output types. The DS4266 is constr ...
P2110-EVAL-02
... demonstration and development platform for wireless battery-charging over distance powered by RF energy (radio waves). This kit features a THINERGY® Micro-Energy Cell (MEC) from Infinite Power Solutions (IPS) which has an ultra-thin form factor and extremely low leakage. Batteries are charged by the ...
... demonstration and development platform for wireless battery-charging over distance powered by RF energy (radio waves). This kit features a THINERGY® Micro-Energy Cell (MEC) from Infinite Power Solutions (IPS) which has an ultra-thin form factor and extremely low leakage. Batteries are charged by the ...
Micro SIL Reed Relays
... usual 0.2 x 0.8 inch devices, this allows around 80 percent more relays onto your board. These are the ideal choice for high density applications such as A.T.E. switching matrices or where very little board area is available. Mu-metal, due to its high permeability and low magnetic remanence is used ...
... usual 0.2 x 0.8 inch devices, this allows around 80 percent more relays onto your board. These are the ideal choice for high density applications such as A.T.E. switching matrices or where very little board area is available. Mu-metal, due to its high permeability and low magnetic remanence is used ...
instruction manual
... modification, alteration or mis-use. Normal wear is not warranteed. All repairs and replacements under the provisions of this warranty shall be made at Dover Flexo Electronics or at an authorized repair facility. The Company shall not be liable for expenses incurred to repair or replace defective pr ...
... modification, alteration or mis-use. Normal wear is not warranteed. All repairs and replacements under the provisions of this warranty shall be made at Dover Flexo Electronics or at an authorized repair facility. The Company shall not be liable for expenses incurred to repair or replace defective pr ...
How to kill UAV - BraveHeartRadio.Net
... C-Band transmitter antenna as high up as possible. (don't care with paraboles) This is caused by the fact that the radiowaves travel two separate ways from your transmitter. ...
... C-Band transmitter antenna as high up as possible. (don't care with paraboles) This is caused by the fact that the radiowaves travel two separate ways from your transmitter. ...
RS-485 for E-Meter Applications (Rev. A)
... In many applications, it is desirable to electrically isolate the various nodes on a bus from each other. This can eliminate problems due to ground loops, conducted noise, or high commonmode voltages that exceed the RS-485 common-mode voltage range. An example of an isolated interface is shown in Fi ...
... In many applications, it is desirable to electrically isolate the various nodes on a bus from each other. This can eliminate problems due to ground loops, conducted noise, or high commonmode voltages that exceed the RS-485 common-mode voltage range. An example of an isolated interface is shown in Fi ...
1 - University of Toronto
... of the resonant circuit effective loop impedance. It follows from Eq. 14b that the loop impedance Z, approximated in the neighbourhood of resonance by expression X C0 1 Q 2 j 0 0 increases rapidly as the frequency moves away from the resonance with the reactive part dominating the magn ...
... of the resonant circuit effective loop impedance. It follows from Eq. 14b that the loop impedance Z, approximated in the neighbourhood of resonance by expression X C0 1 Q 2 j 0 0 increases rapidly as the frequency moves away from the resonance with the reactive part dominating the magn ...
Model 261 Telephone Handset
... in a loop of the same polarity msy be detected by conb. An open in foil necting the handset across the suspected portion of the loop. If an open is present in the section being tested, a click will be heard‘(aIthough muchueakerthan from a positive and negative voltage). C. ...
... in a loop of the same polarity msy be detected by conb. An open in foil necting the handset across the suspected portion of the loop. If an open is present in the section being tested, a click will be heard‘(aIthough muchueakerthan from a positive and negative voltage). C. ...
self and source bias equations
... Self bias and source bias FET circuits do not have a very simple formula for determining the drain current. The development of their equations is a little more involved than a simple KVL/Ohm’s Law solution. Instead, they will focus on the device transconductance equation. Consider a basic self bias ...
... Self bias and source bias FET circuits do not have a very simple formula for determining the drain current. The development of their equations is a little more involved than a simple KVL/Ohm’s Law solution. Instead, they will focus on the device transconductance equation. Consider a basic self bias ...
4 Electrical Ratings and Characteristics of Power Semiconductor
... packaging and die size constraints. ...
... packaging and die size constraints. ...
Switched-mode power supply
A switched-mode power supply (switching-mode power supply, switch-mode power supply, SMPS, or switcher) is an electronic power supply that incorporates a switching regulator to convert electrical power efficiently. Like other power supplies, an SMPS transfers power from a source, like mains power, to a load, such as a personal computer, while converting voltage and current characteristics. Unlike a linear power supply, the pass transistor of a switching-mode supply continually switches between low-dissipation, full-on and full-off states, and spends very little time in the high dissipation transitions, which minimizes wasted energy. Ideally, a switched-mode power supply dissipates no power. Voltage regulation is achieved by varying the ratio of on-to-off time. In contrast, a linear power supply regulates the output voltage by continually dissipating power in the pass transistor. This higher power conversion efficiency is an important advantage of a switched-mode power supply. Switched-mode power supplies may also be substantially smaller and lighter than a linear supply due to the smaller transformer size and weight.Switching regulators are used as replacements for linear regulators when higher efficiency, smaller size or lighter weight are required. They are, however, more complicated; their switching currents can cause electrical noise problems if not carefully suppressed, and simple designs may have a poor power factor.