Troubleshooting for Zartek Multi
... signal loss then the antenna is working. If there is no change then either the antenna or its connections are faulty. It is advised to use a booster handset, ZA-613-E, if there are many walls and trees and the distance is around 100m. Change the supply by using a dedicated power supply as there may ...
... signal loss then the antenna is working. If there is no change then either the antenna or its connections are faulty. It is advised to use a booster handset, ZA-613-E, if there are many walls and trees and the distance is around 100m. Change the supply by using a dedicated power supply as there may ...
LR Series Receiver Module Data Guide
... with a low-side Local Oscillator (LO). The LO frequency is generated by a Voltage Controlled Oscillator (VCO) locked by a Phase-Locked Loop (PLL) frequency synthesizer that utilizes a precision crystal reference. The mixer stage incorporates a pair of double-balanced mixers and a unique image reject ...
... with a low-side Local Oscillator (LO). The LO frequency is generated by a Voltage Controlled Oscillator (VCO) locked by a Phase-Locked Loop (PLL) frequency synthesizer that utilizes a precision crystal reference. The mixer stage incorporates a pair of double-balanced mixers and a unique image reject ...
chapter 1 - introduction to semiconductor
... After cross the junction, the e- lose energy & fall into the holes in p-region valence band. As the diffusion continues, the depletion region begins to form and the energy level of n-region conduction band decrease. Soon, no more electrons left in n-region conduction band with enough energy to cross ...
... After cross the junction, the e- lose energy & fall into the holes in p-region valence band. As the diffusion continues, the depletion region begins to form and the energy level of n-region conduction band decrease. Soon, no more electrons left in n-region conduction band with enough energy to cross ...
A SATELLITE RECEIVING FRONT-END FOR
... the active devices based on cost and availability rather than electrical performances and the design of an (un)suitable microstrip circuit based on extensive computations. Unfortunately very little experimentation has been done with the real amplifier circuit and even less experiments have been made ...
... the active devices based on cost and availability rather than electrical performances and the design of an (un)suitable microstrip circuit based on extensive computations. Unfortunately very little experimentation has been done with the real amplifier circuit and even less experiments have been made ...
AP5004 PWM CONTROL 2.5A STEP-DOWN CONVERTER Description
... able to vary the duty ratio linearly from 0% up to 90%. An enable function, an over-current protect function, and a short circuit protect function are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300 KHz to 50 KHz. Also, an internal compensation block has b ...
... able to vary the duty ratio linearly from 0% up to 90%. An enable function, an over-current protect function, and a short circuit protect function are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300 KHz to 50 KHz. Also, an internal compensation block has b ...
Microwaves in Waveguides
... supply. Only 6.3 V heater voltage is now supplied to the klystron. 1.3 Select the 1KHz square wave and set the reflector voltage knob in center position (~ 100V). Wait at least 1 min and then press the “Res/refl.on” button. The klystron is supplied now with 300V on the resonator and ~ 100V modulated ...
... supply. Only 6.3 V heater voltage is now supplied to the klystron. 1.3 Select the 1KHz square wave and set the reflector voltage knob in center position (~ 100V). Wait at least 1 min and then press the “Res/refl.on” button. The klystron is supplied now with 300V on the resonator and ~ 100V modulated ...
1 Light Emitting Diodes and Solid-State Lighting Solid-state
... (Light-exit mirror should have lower reflectivity than back mirror) ...
... (Light-exit mirror should have lower reflectivity than back mirror) ...
RF Frequency Linear Tuning Varactors
... In the early 1970’s hyperabrupt silicon varactors became available in which the capacitance - voltage curve of the abrupt junction diodes was modified by adding an N+ layer under the junction, either by ion implantation, by an additional diffusion, or an additional epitaxial layer. This had the effe ...
... In the early 1970’s hyperabrupt silicon varactors became available in which the capacitance - voltage curve of the abrupt junction diodes was modified by adding an N+ layer under the junction, either by ion implantation, by an additional diffusion, or an additional epitaxial layer. This had the effe ...
AP5101 1.5A Step-Down Converter with 1.4MHz Switching Frequency
... Vout capacitor = ΔIinductor × ESR An output capacitor with ample capacitance and low ESR is the best option. For most applications, a 22µF ceramic capacitor will be sufficient. ...
... Vout capacitor = ΔIinductor × ESR An output capacitor with ample capacitance and low ESR is the best option. For most applications, a 22µF ceramic capacitor will be sufficient. ...
Power harvesting from microwave oven electromagnetic leakage
... An alternative approach to multiplying power while maintaining high conversion efficiency is the use of a DC–DC integrated charge pump. Recently, Parks et al. demonstrated a combination of a simpler rectifier and low-power DC–DC converter (Seiko S-882Z IC)[9]. We believe this approach will provide p ...
... An alternative approach to multiplying power while maintaining high conversion efficiency is the use of a DC–DC integrated charge pump. Recently, Parks et al. demonstrated a combination of a simpler rectifier and low-power DC–DC converter (Seiko S-882Z IC)[9]. We believe this approach will provide p ...
Document
... Reverse current is normally small and can be neglected. They result from movement of minority carriers. But if applied voltage is bigger than the breakdown voltage, the current will increase drastically. The high reverse biased voltage, imparts energy to the free minority electrons so that they s ...
... Reverse current is normally small and can be neglected. They result from movement of minority carriers. But if applied voltage is bigger than the breakdown voltage, the current will increase drastically. The high reverse biased voltage, imparts energy to the free minority electrons so that they s ...
ZXLD381 Summary A Product Line of
... When power is applied, an oscillator within the pulse control block forces the internal switching transistor to switch on to start an energy charge cycle. The low saturation voltage switch pulls the VOUT pin close to ground which forces the supply voltage across the external inductor L1. This causes ...
... When power is applied, an oscillator within the pulse control block forces the internal switching transistor to switch on to start an energy charge cycle. The low saturation voltage switch pulls the VOUT pin close to ground which forces the supply voltage across the external inductor L1. This causes ...
DLD101 Features Mechanical Data
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
AND8230/D Application Hints for Transient Voltage Suppression Diode Circuits
... capacitor of approximately 0.01 to 0.1 mF across the power pins reduces the magnitude of the surge pulse. Additional surge protection can be provided by using a diode array with a built−in avalanche diode that has a breakdown voltage slightly higher than VDD. Integrating the avalanche diode in the T ...
... capacitor of approximately 0.01 to 0.1 mF across the power pins reduces the magnitude of the surge pulse. Additional surge protection can be provided by using a diode array with a built−in avalanche diode that has a breakdown voltage slightly higher than VDD. Integrating the avalanche diode in the T ...
SWR - STARGUN Antenna
... Secondary effects, or events, can use impedance matching circuits to always present a balanced load, even though the feed point impedance of the antenna itself is vastly different. An end-fed 1/2 wave length antenna offers an impedance of 1500 ohms, but center-fed dipoles offer an impedance of 72-7 ...
... Secondary effects, or events, can use impedance matching circuits to always present a balanced load, even though the feed point impedance of the antenna itself is vastly different. An end-fed 1/2 wave length antenna offers an impedance of 1500 ohms, but center-fed dipoles offer an impedance of 72-7 ...
40G QPSK and DQPSK Modulation
... maintaining signal quality. Optical communication systems have predominantly used some form of on/off keying (OOK) as a modulation format, namely NRZ or RZ modulation. As data rates increase, the inefficiency of these modulation formats from a bandwidth point of view is becoming more apparent. With ...
... maintaining signal quality. Optical communication systems have predominantly used some form of on/off keying (OOK) as a modulation format, namely NRZ or RZ modulation. As data rates increase, the inefficiency of these modulation formats from a bandwidth point of view is becoming more apparent. With ...
v I
... Drift – movement of carriers due to the existence of electric field Diffusion – movement of carriers due to gradient in concentrations ...
... Drift – movement of carriers due to the existence of electric field Diffusion – movement of carriers due to gradient in concentrations ...
Technology Brief 5 Light
... both handheld displays and much larger displays (such as billboards and signage, as shown in Fig. TF5-6). Some LED displays use edge lighting where LEDs shine light across the screen (allowing the display to be thinner than traditional screens but not improving picture quality). Others use RGB LEDs. ...
... both handheld displays and much larger displays (such as billboards and signage, as shown in Fig. TF5-6). Some LED displays use edge lighting where LEDs shine light across the screen (allowing the display to be thinner than traditional screens but not improving picture quality). Others use RGB LEDs. ...
AP3171 N E W P R O D U C T Description Features Pin
... configuration to backwards compatible to the existing devices that are not compatible to Qualcomm QC 2.0. ...
... configuration to backwards compatible to the existing devices that are not compatible to Qualcomm QC 2.0. ...
SOI-Enabled MEMS Processes Lead to Novel Mechanical, Optical
... exploited for device processing options. The chemical differences between silicon and silicon dioxide enable the use of selective etch processes to remove either layer without disturbing the other. Bosch etching is highly successful in fabricating single crystal bulk-like SOI devices with much thick ...
... exploited for device processing options. The chemical differences between silicon and silicon dioxide enable the use of selective etch processes to remove either layer without disturbing the other. Bosch etching is highly successful in fabricating single crystal bulk-like SOI devices with much thick ...
dangers associated with polarity reversal
... battery, set the power house ablaze and if not careful kill the operator. Solution to reversed poalrity Polarity results from the fact that an electrical circuit has a negative and a positive pole. Direct current (DC) flows in one direction, resulting in a constant polarity (Lincoln, 2014). Example ...
... battery, set the power house ablaze and if not careful kill the operator. Solution to reversed poalrity Polarity results from the fact that an electrical circuit has a negative and a positive pole. Direct current (DC) flows in one direction, resulting in a constant polarity (Lincoln, 2014). Example ...
Direct Light-Triggered Solid-State Switches For Pulsed Power Applications J. Przybilla
... voltage sharing of the total voltage applied to the stack assembly. The thread rods are made of carbon fibers and special care has been taken to avoid sharp edges because at such edges a large electric field strength can arise. In this application the trigger unit is installed at the bottom of the s ...
... voltage sharing of the total voltage applied to the stack assembly. The thread rods are made of carbon fibers and special care has been taken to avoid sharp edges because at such edges a large electric field strength can arise. In this application the trigger unit is installed at the bottom of the s ...
AP3171 - Diodes Incorporated
... configuration to backwards compatible to the existing devices that are not compatible to Qualcomm QC 2.0. ...
... configuration to backwards compatible to the existing devices that are not compatible to Qualcomm QC 2.0. ...
Silicon nitride biaxial pointing mirrors with stiffening ribs
... of the mirror, the more fibers can be used in the optical cross connect reducing the total number of cross connects required. The mirror should be easily produced. Complex and exotic processes increase the production costs and reduce the yield, raising the ultimate cost of the cross connect. This re ...
... of the mirror, the more fibers can be used in the optical cross connect reducing the total number of cross connects required. The mirror should be easily produced. Complex and exotic processes increase the production costs and reduce the yield, raising the ultimate cost of the cross connect. This re ...
Amateur Extra Licensing Class
... There are separate electric (E) and magnetic (H) field MPE limits because: Ground reflections and scattering make the field impedance vary with location. E field and H field radiation intensity peaks can occur at different locations. ...
... There are separate electric (E) and magnetic (H) field MPE limits because: Ground reflections and scattering make the field impedance vary with location. E field and H field radiation intensity peaks can occur at different locations. ...