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... and fits better with the trend towards flexible radios with as much signal processing (e.g., channel selection, image rejection, etc.) as possible in the digital domain (toward “software radio”). High-sensitivity integrated receivers require LNAs with sufficiently large gain, noise figure (NF) well ...
... and fits better with the trend towards flexible radios with as much signal processing (e.g., channel selection, image rejection, etc.) as possible in the digital domain (toward “software radio”). High-sensitivity integrated receivers require LNAs with sufficiently large gain, noise figure (NF) well ...
Steady Electric Current
... Calculation for E, J • Consider how the resistance are connected. – Serial connection (integration using R dR ) Constant current: J I a current S – Parallel connection (integration using G dG ) V Constant voltage: E a L ...
... Calculation for E, J • Consider how the resistance are connected. – Serial connection (integration using R dR ) Constant current: J I a current S – Parallel connection (integration using G dG ) V Constant voltage: E a L ...
Application Notes
... silicon chip as well as laterally from outside the perimeter of the active area of the chip. ...
... silicon chip as well as laterally from outside the perimeter of the active area of the chip. ...
Fig 2(d) - Academic Science,International Journal of Computer
... (AMBE - the absolute difference between input and output mean). An efficient recursive integer-based computation for AMBE has been formulated to facilitate real time implementation. Simulation results using sample image which represent images with very low, very high and medium mean brightness show ...
... (AMBE - the absolute difference between input and output mean). An efficient recursive integer-based computation for AMBE has been formulated to facilitate real time implementation. Simulation results using sample image which represent images with very low, very high and medium mean brightness show ...
THE NATURE OF CAPACITANCE
... Both store electrical energy, but function differently Unlike a battery, a capacitor cannot produce new electrons – it only stores them The two terminals of a capacitor are connected to two metal plates separated by an insulator called a dielectric Dielectric can be air, paper, plastic – any type of ...
... Both store electrical energy, but function differently Unlike a battery, a capacitor cannot produce new electrons – it only stores them The two terminals of a capacitor are connected to two metal plates separated by an insulator called a dielectric Dielectric can be air, paper, plastic – any type of ...
Chapter 7 NOISE
... However, when M is large, the thermal and amplifier noise term becomes insignificant and the SNR decreases with increasing M at the rate of Mx. ...
... However, when M is large, the thermal and amplifier noise term becomes insignificant and the SNR decreases with increasing M at the rate of Mx. ...
The origin of switching noise in GaAs/AlGaAs lateral gated devices
... (more) negative voltages. In the inset, the shift of the depletion point is plotted as a function of the cooling bias, i.e. the gate voltage value at which the channel is formed, with respect to the zero bias cooldown value. The line corresponds to a shift that equals the applied bias. One can see t ...
... (more) negative voltages. In the inset, the shift of the depletion point is plotted as a function of the cooling bias, i.e. the gate voltage value at which the channel is formed, with respect to the zero bias cooldown value. The line corresponds to a shift that equals the applied bias. One can see t ...
Acdefg Hijklmnop Qrst Uvw XYZ
... taken multiple Hall measurement across the whole wafer. The typical sheet carrier concentration and electron mobility is 1.04×1013 cm-2 and 1575 cm2/Vs, respectively, which is in good agreement with the results of sheet resistance mapping. These results indicate a high quality and uniformity of the ...
... taken multiple Hall measurement across the whole wafer. The typical sheet carrier concentration and electron mobility is 1.04×1013 cm-2 and 1575 cm2/Vs, respectively, which is in good agreement with the results of sheet resistance mapping. These results indicate a high quality and uniformity of the ...
TPS6030x EVM-170 Single-Cell Charge Pump
... Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations and notices. Representation or reproduction of this information with alteration voids all warranties provided ...
... Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations and notices. Representation or reproduction of this information with alteration voids all warranties provided ...
An Introduction to the Silicon Photomultiplier
... SPAD (Single Photon Avalanche Diode). The application of a reverse bias beyond its nominal breakdown voltage creates the necessary high-field gradients across the junction. Once a current is flowing it should then be stopped or ‘quenched’. Passive quenching (i.e. no active circuitry), is achieved t ...
... SPAD (Single Photon Avalanche Diode). The application of a reverse bias beyond its nominal breakdown voltage creates the necessary high-field gradients across the junction. Once a current is flowing it should then be stopped or ‘quenched’. Passive quenching (i.e. no active circuitry), is achieved t ...
General characteristics. Device operation.
... The device cannot directly damage any connected units, however the range of voltage sent to the alternator is very broad and includes prohibited values (over 15V), which can result in electrical system errors if the alternator is tested without removing it from the vehicle. Can the device or connect ...
... The device cannot directly damage any connected units, however the range of voltage sent to the alternator is very broad and includes prohibited values (over 15V), which can result in electrical system errors if the alternator is tested without removing it from the vehicle. Can the device or connect ...
preamp performance for p-in
... plots show that in some cases, for higher temperatures, the tolerable DC leakage current is less than 1 mA. But 1 mA can be tolerated in all cases for temperatures below ~ -15 degrees. Note that the coincidence of worst case resistor tolerance, worst case process corner and worst case operating poin ...
... plots show that in some cases, for higher temperatures, the tolerable DC leakage current is less than 1 mA. But 1 mA can be tolerated in all cases for temperatures below ~ -15 degrees. Note that the coincidence of worst case resistor tolerance, worst case process corner and worst case operating poin ...
2300_QU2_Shattuck_Fall2002
... ECE 2300 -- Quiz #2 – October 3, 2002 – 5:30-7PM TuTh Shattuck Section Solution ...
... ECE 2300 -- Quiz #2 – October 3, 2002 – 5:30-7PM TuTh Shattuck Section Solution ...
An efficient approach to noise analysis through multidimensional
... sources in terms of carrier velocity and population fluctuations—called diffusion and generation-recombination noise sources, respectively. Second, they evaluate the effect of microscopic fluctuations on voltage or current fluctuations at the device terminals. Owing to the small amplitude of microsc ...
... sources in terms of carrier velocity and population fluctuations—called diffusion and generation-recombination noise sources, respectively. Second, they evaluate the effect of microscopic fluctuations on voltage or current fluctuations at the device terminals. Owing to the small amplitude of microsc ...
Chapter 5(cont)_NOISE
... However, when M is large, the thermal and amplifier noise term becomes insignificant and the SNR decreases with increasing M at the rate of Mx. ...
... However, when M is large, the thermal and amplifier noise term becomes insignificant and the SNR decreases with increasing M at the rate of Mx. ...
A Primer on Photodiode Technology Page 1 of 11 Photodiode
... For a fast response time, silicon resistivity and operating voltage must be chosen to produce a depletion layer within which the majority of the carriers are generated. In this case the transit time will be dependent on both the electron and hole drift velocities. The depletion depth necessary for f ...
... For a fast response time, silicon resistivity and operating voltage must be chosen to produce a depletion layer within which the majority of the carriers are generated. In this case the transit time will be dependent on both the electron and hole drift velocities. The depletion depth necessary for f ...
AN-1719 - Noise Figure Analysis Fully Differential Amplifier
... To highlight the difference in noise performance between CFB and VFB FDAs, the application circuit of Figure 3 is used to calculate the output noise spectral density and noise figure at various values of gain using both the LMH6552 (CFB) and LMH6550 (VFB) FDAs in a 100Ω system. RF is held at 301Ω an ...
... To highlight the difference in noise performance between CFB and VFB FDAs, the application circuit of Figure 3 is used to calculate the output noise spectral density and noise figure at various values of gain using both the LMH6552 (CFB) and LMH6550 (VFB) FDAs in a 100Ω system. RF is held at 301Ω an ...
CAPACITORS - waiuku
... Hence Q = C V C is measured in FARADS, [F], - more often : F, nF or pF The capacitance, C, is defined as the charge required to raise the potential by one volt. ...
... Hence Q = C V C is measured in FARADS, [F], - more often : F, nF or pF The capacitance, C, is defined as the charge required to raise the potential by one volt. ...
High PSRR, Low-Noise, 1-A Power Filter (Rev. B)
... across the input and output terminals with high efficiency (low insertion loss), and power-supply rejection. The device is ideally suited as a noise filter for 3.3-V, 2.5-V, and 1.8-V supplies at up to 1 A. The input-to-output voltage regulation is also userprogrammable, from 200 mV to 500 mV, with ...
... across the input and output terminals with high efficiency (low insertion loss), and power-supply rejection. The device is ideally suited as a noise filter for 3.3-V, 2.5-V, and 1.8-V supplies at up to 1 A. The input-to-output voltage regulation is also userprogrammable, from 200 mV to 500 mV, with ...
How the Charge Sensor Works - CMA
... CMA interfaces and the sensor is automatically recognized when it is connected to these interfaces. If your Charge sensor is not automatically detected by an interface you have to manually set up your sensor by selecting it from the Coach Sensor Library. For correct range detection first select the ...
... CMA interfaces and the sensor is automatically recognized when it is connected to these interfaces. If your Charge sensor is not automatically detected by an interface you have to manually set up your sensor by selecting it from the Coach Sensor Library. For correct range detection first select the ...
Efficiency of Solid State Photomultipliers in Photon Number Resolution
... not so clear. Ultra-low excess noise factor Fm ~ 1.01 – 1.05 of Geiger mode avalanche limited by negative feedback (quenching) was observed in many reports for SSPM of different types. It was measured in correspondence with (5) applied in the most cases to single electron peak of charge / gain / pul ...
... not so clear. Ultra-low excess noise factor Fm ~ 1.01 – 1.05 of Geiger mode avalanche limited by negative feedback (quenching) was observed in many reports for SSPM of different types. It was measured in correspondence with (5) applied in the most cases to single electron peak of charge / gain / pul ...
slides - Indico
... Investigated devices were irradiated up to 10 MRad(SiO2) total dose with -rays 60Co source. The MOSFETs were biased during irradiation in the worst-case condition (PMOS: all terminals grounded, NMOS: 1.2 V on the gate relative to source, drain and body) ...
... Investigated devices were irradiated up to 10 MRad(SiO2) total dose with -rays 60Co source. The MOSFETs were biased during irradiation in the worst-case condition (PMOS: all terminals grounded, NMOS: 1.2 V on the gate relative to source, drain and body) ...
From Vertices to Fragments
... Either brigtnesses are changing too slowly to be noticed, or the brightnesses are changing too quickly, causing visible transitions between regions of pixels that differ in value by one. The latter situation can occur at low intensities. Our eyes are more sensitive to changes at low intensities. We ...
... Either brigtnesses are changing too slowly to be noticed, or the brightnesses are changing too quickly, causing visible transitions between regions of pixels that differ in value by one. The latter situation can occur at low intensities. Our eyes are more sensitive to changes at low intensities. We ...
Charge-coupled device
A charge-coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for example conversion into a digital value. This is achieved by ""shifting"" the signals between stages within the device one at a time. CCDs move charge between capacitive bins in the device, with the shift allowing for the transfer of charge between bins.The CCD is a major piece of technology in digital imaging. In a CCD image sensor, pixels are represented by p-doped MOS capacitors. These capacitors are biased above the threshold for inversion when image acquisition begins, allowing the conversion of incoming photons into electron charges at the semiconductor-oxide interface; the CCD is then used to read out these charges. Although CCDs are not the only technology to allow for light detection, CCD image sensors are widely used in professional, medical, and scientific applications where high-quality image data is required. In applications with less exacting quality demands, such as consumer and professional digital cameras, active pixel sensors (CMOS) are generally used; the large quality advantage CCDs enjoyed early on has narrowed over time.