HIGH OR PREMIUM EFFICIENCY MOTORS
... As a result of the higher magnetic flux, high efficiency motors might present lower slip (higher speed), and depending on the type of load being driven, the motors can deliver more output (flow, pressure). This is not true on all high efficiency motors. If one considers power over a certain time the ...
... As a result of the higher magnetic flux, high efficiency motors might present lower slip (higher speed), and depending on the type of load being driven, the motors can deliver more output (flow, pressure). This is not true on all high efficiency motors. If one considers power over a certain time the ...
Near-Threshold Computing - EECS @ Michigan
... proportionate increases in performance or energy efficiency. Starting around the 65 nm node, device scaling no longer delivers the energy gains that drove the semiconductor growth of the past several decades, as shown in Fig. 1. The supply voltage has remained essentially constant since then and dyn ...
... proportionate increases in performance or energy efficiency. Starting around the 65 nm node, device scaling no longer delivers the energy gains that drove the semiconductor growth of the past several decades, as shown in Fig. 1. The supply voltage has remained essentially constant since then and dyn ...
User`s manual Pulsar 2 V2.10
... Ni-Cd, Ni-MH – The memory occurrence which appears in that cell types needs full discharging battery before charging process. That discharging process (Auto mode) should be done every 5 – 10 charges. One Format cycle with Regen function will give good effects. Formatting new packets should be done w ...
... Ni-Cd, Ni-MH – The memory occurrence which appears in that cell types needs full discharging battery before charging process. That discharging process (Auto mode) should be done every 5 – 10 charges. One Format cycle with Regen function will give good effects. Formatting new packets should be done w ...
18.5% Laser-doped Solar Cell on CZ P-type Silicon - Spectra
... and effective way of forming a selective emitter can be achieved by laser doping to simultaneously pattern the dielectric with openings as narrow as 8 m, and create heavy doping beneath the metal contacts. In conjunction with laser doping, light-induced plating (LIP) is seen as an attractive approa ...
... and effective way of forming a selective emitter can be achieved by laser doping to simultaneously pattern the dielectric with openings as narrow as 8 m, and create heavy doping beneath the metal contacts. In conjunction with laser doping, light-induced plating (LIP) is seen as an attractive approa ...
Activities - Center for High Technology Materials
... In thermal detectors (Si-based microbolometers, pyrometers, thermocouples, Golay cells, and superconductors) incident optical radiation increases the temperature of the detector which leads to a change in physical parameters, such as resistance or voltage. Some of the characteristic features of ther ...
... In thermal detectors (Si-based microbolometers, pyrometers, thermocouples, Golay cells, and superconductors) incident optical radiation increases the temperature of the detector which leads to a change in physical parameters, such as resistance or voltage. Some of the characteristic features of ther ...
2. fluorescent lamps - Scientific Bulletin of Electrical Engineering
... 8 – 12 the display windows for the fluorescent lamp and the ballast are illustrated. Figures 8 – 10 display the voltage waveforms between the fluorescent lamp terminals. In order to underline the lamp functioning at different supply voltages, figure 8 presents the lamp voltage for a 190 V, figure 9 ...
... 8 – 12 the display windows for the fluorescent lamp and the ballast are illustrated. Figures 8 – 10 display the voltage waveforms between the fluorescent lamp terminals. In order to underline the lamp functioning at different supply voltages, figure 8 presents the lamp voltage for a 190 V, figure 9 ...
L24093097
... region in order to model resistors. The goal of NMOS differential pair is to switch the current provided by the current source from one side to the other. The current source for MCML circuits is designed with a single NMOS transistor. Table 1: Design parameter of 6T SRAM cell using MCML Device No. o ...
... region in order to model resistors. The goal of NMOS differential pair is to switch the current provided by the current source from one side to the other. The current source for MCML circuits is designed with a single NMOS transistor. Table 1: Design parameter of 6T SRAM cell using MCML Device No. o ...
Shockley–Queisser limit
In physics, the Shockley–Queisser limit or detailed balance limit refers to the maximum theoretical efficiency of a solar cell using a p-n junction to collect power from the cell. It was first calculated by William Shockley and Hans Queisser at Shockley Semiconductor in 1961. The limit is one of the most fundamental to solar energy production, and is considered to be one of the most important contributions in the field.The limit places maximum solar conversion efficiency around 33.7% assuming a single p-n junction with a band gap of 1.34 eV (using an AM 1.5 solar spectrum). That is, of all the power contained in sunlight falling on an ideal solar cell (about 1000 W/m²), only 33.7% of that could ever be turned into electricity (337 W/m²). The most popular solar cell material, silicon, has a less favourable band gap of 1.1 eV, resulting in a maximum efficiency of 33.3%. Modern commercial mono-crystalline solar cells produce about 24% conversion efficiency, the losses due largely to practical concerns like reflection off the front surface and light blockage from the thin wires on its surface.The Shockley–Queisser limit only applies to cells with a single p-n junction; cells with multiple layers can outperform this limit. In the extreme, with an infinite number of layers, the corresponding limit is 86% using concentrated sunlight.