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displacement damage induced by cosmic rays in silicon devices
displacement damage induced by cosmic rays in silicon devices

document
document

26. Electromagnetic Wave Theory and Applications
26. Electromagnetic Wave Theory and Applications

... the tangential electric fields on the surfaces of the structure vanish. From this integral equation, the dispersion relation is solved numerically by Galerkin's method. It is found from the dispersion relation that the structure behaves as a bandstop filter. The pulse is distorted as it propagates a ...
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The nature of carrier localisation in polar and nonpolar InGaN/GaN

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... conductivity. Metals (which we classify as conductors) generally have conductivities that are orders of magnitude larger than the conductivities of materials like rubber and plastic – those materials we call insulators. The major difference between these two classes of materials is that, in an insul ...
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Light Scattering of Semiconducting Nanoparticles
Light Scattering of Semiconducting Nanoparticles

... of the scattered (incident) light, q is the wavevector transfered to the excitation. The energies of crystalline vibrations probed by Raman scattering are about <01 eV and those of the exciting visible laserlight are about 2.5 eV (corresponding to the wavelength L ≈ 500 nm). Therefore, from Eq. ( ...
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Download! - Edhole.com

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Simulation of Hot Carriers in Semiconductor Devices

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Ch. 22 (Electrostatics)

... ⇒ The electrons, of all atoms are identical; they have the same mass and the same charge (also true of protons and neutrons) ⇒ Protons have the same charge as electron (but opposite signs) but have about 1800 times more mass. Neutrons have a little more mass than protons but they have no charge. ⇒ M ...
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Heat Generation and Transport in Nanometer-Scale Transistors

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Electron mobility

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