Datasheet
... SP490ECN-L................................................................................... 0˚C to +70˚C................................................................................ 8-Pin NSOIC SP490ECN-L/TR............................................................................. 0˚C to +70 ...
... SP490ECN-L................................................................................... 0˚C to +70˚C................................................................................ 8-Pin NSOIC SP490ECN-L/TR............................................................................. 0˚C to +70 ...
High-Voltage, High-Current OPERATIONAL AMPLIFIER DESCRIPTION FEATURES
... low-level signal accuracy and high output voltage and current. The OPA548 operates from either single or dual supplies for design flexibility. In single-supply operation, the input common-mode range extends below ground. The OPA548 is internally protected against over-temperature conditions and curr ...
... low-level signal accuracy and high output voltage and current. The OPA548 operates from either single or dual supplies for design flexibility. In single-supply operation, the input common-mode range extends below ground. The OPA548 is internally protected against over-temperature conditions and curr ...
CD4010B-Q1 CMOS Hex Buffer/Converter (Rev
... issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order ...
... issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order ...
Procedures - Faculty of Engineering
... the largest hFE for hFE1 if hFE is about constant at different IC values] and hFE,ND1 is the normalized-hFE value of the curve at TJ = +25oC in Figure AE4 (Appendix E) at the IC value corresponding to IB = 30A in Table E4.1(a). Plot the calculated hFE,N versus IC in Figure AE4. Some transistors hav ...
... the largest hFE for hFE1 if hFE is about constant at different IC values] and hFE,ND1 is the normalized-hFE value of the curve at TJ = +25oC in Figure AE4 (Appendix E) at the IC value corresponding to IB = 30A in Table E4.1(a). Plot the calculated hFE,N versus IC in Figure AE4. Some transistors hav ...
BD63940EFV
... separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic capacitors in the circuit, not that capacitance characteristic values are r ...
... separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic capacitors in the circuit, not that capacitance characteristic values are r ...
Data Sheet Features
... deviations do not much relieve. The selection of COUT is determined by the Effective Series Resistance (ESR) that is required to minimize output voltage ripple and load step transients, as well as the amount of bulk capacitor that is necessary to ensure that the control loop is stable. Loop stabilit ...
... deviations do not much relieve. The selection of COUT is determined by the Effective Series Resistance (ESR) that is required to minimize output voltage ripple and load step transients, as well as the amount of bulk capacitor that is necessary to ensure that the control loop is stable. Loop stabilit ...
A simple three-terminal IC bandgap reference
... signal to the base of Q4. This transistor forms a Darlington connection with Q7) the output transistor, and provides the current-mirror bootstrap voltage as well. The circuit, as shown in Fig. 3, has a stable “off” or no-current state. An epitaxial layer FET, Q15, is incorporated into the circ,uit o ...
... signal to the base of Q4. This transistor forms a Darlington connection with Q7) the output transistor, and provides the current-mirror bootstrap voltage as well. The circuit, as shown in Fig. 3, has a stable “off” or no-current state. An epitaxial layer FET, Q15, is incorporated into the circ,uit o ...
Improved Dynamic Model of Fast-Settling Linear-in-dB Automatic Gain Control Circuit
... simulation and calculation results for (ωe/ωp)=1/20 and 1/100. Settling time Ts is a function of input amplitude variation ratio k. Simulation parameters: VT=0.6V, ωc=2GHz, Vref=0.24V, A=1mV, gm=1mS, C=2pF, α=0.1, m=0.9. ...
... simulation and calculation results for (ωe/ωp)=1/20 and 1/100. Settling time Ts is a function of input amplitude variation ratio k. Simulation parameters: VT=0.6V, ωc=2GHz, Vref=0.24V, A=1mV, gm=1mS, C=2pF, α=0.1, m=0.9. ...
MAX3388E/MAX3389E 2.5V, ±15kV ESD-Protected RS-232 Transceivers for PDAs and Cell Phones General Description
... excessively with temperature. If in doubt, use capacitors with a larger nominal value. The capacitor’s equivalent series resistance (ESR), which usually rises at low temperatures, influences the amount of ripple on V+ and V-. ...
... excessively with temperature. If in doubt, use capacitors with a larger nominal value. The capacitor’s equivalent series resistance (ESR), which usually rises at low temperatures, influences the amount of ripple on V+ and V-. ...
Simulation Lab
... Go to http://phet.colorado.edu/web-pages/simulations-base.html and open the Circuit Construction Kit. In the activities described below, don’t make the circuits too large, so that you can fit two or three circuits in the work area. For “size” use “small” on the right side of the screen. Resistors in ...
... Go to http://phet.colorado.edu/web-pages/simulations-base.html and open the Circuit Construction Kit. In the activities described below, don’t make the circuits too large, so that you can fit two or three circuits in the work area. For “size” use “small” on the right side of the screen. Resistors in ...
AD629 数据手册DataSheet 下载
... about 2 V of either rail, it is necessary to apply an offset to the output. This can be conveniently done by connecting REF(+) and REF(–) to a low impedance reference voltage (some ADCs provide this voltage as an output), which is capable of sinking current. Therefore, for a single supply of 10 V, V ...
... about 2 V of either rail, it is necessary to apply an offset to the output. This can be conveniently done by connecting REF(+) and REF(–) to a low impedance reference voltage (some ADCs provide this voltage as an output), which is capable of sinking current. Therefore, for a single supply of 10 V, V ...
OWNER`S MANUAL
... 5. Connect the BLUE remote turn-on lead to the source unit’s positive (+12V) remote turn-on output. If your source unit does not have a dedicated remote turn-on output, the amplifier’s turn-on lead can be connected to +12V via a switch that derives power from an ignition-switched circuit. 6. Signa ...
... 5. Connect the BLUE remote turn-on lead to the source unit’s positive (+12V) remote turn-on output. If your source unit does not have a dedicated remote turn-on output, the amplifier’s turn-on lead can be connected to +12V via a switch that derives power from an ignition-switched circuit. 6. Signa ...
Novel Three-Phase CM/DM Conducted Emission Separator
... leakage (Lσ ) and magnetizing (LM ) inductances, as well as for the parasitic capacitances (C1 . . . C6 ) [23]. For simplification, the leakage inductance is concentrated on the primary side only. The influence of the mentioned parasitic elements could be described by the following characteristics: ...
... leakage (Lσ ) and magnetizing (LM ) inductances, as well as for the parasitic capacitances (C1 . . . C6 ) [23]. For simplification, the leakage inductance is concentrated on the primary side only. The influence of the mentioned parasitic elements could be described by the following characteristics: ...
Capacitors and Capacitance
... has two terminals. Inside the battery, chemical reactions produce electrons on one terminal and absorb electrons at the other terminal. A capacitor is a much simpler device, and it cannot produce new electrons - it only stores them. Like a battery, a capacitor has two terminals. Inside the capacitor ...
... has two terminals. Inside the battery, chemical reactions produce electrons on one terminal and absorb electrons at the other terminal. A capacitor is a much simpler device, and it cannot produce new electrons - it only stores them. Like a battery, a capacitor has two terminals. Inside the capacitor ...
MAX115/MAX116 2x4-Channel, Simultaneous-Sampling 12-Bit ADCs ________________General Description
... Note 10: Defined as the change in positive full scale caused by a ±5% variation in the nominal supply voltage. Tested with one input at full scale and all others at AGND. VREFIN = +2.5V (internal). Note 11: Tested with all inputs connected to AGND. VREFIN = +2.5V (internal). Note 12: The data access ...
... Note 10: Defined as the change in positive full scale caused by a ±5% variation in the nominal supply voltage. Tested with one input at full scale and all others at AGND. VREFIN = +2.5V (internal). Note 11: Tested with all inputs connected to AGND. VREFIN = +2.5V (internal). Note 12: The data access ...
