Design of Variable Gain Amplifier - Nanyang Technological University
... re-configurability and power scalability. As a result, multiple application standards can be satisfied with options for wide gain variation range, small gain error or low power consumption. There are mainly two types of cells designed for the proposed cell-based design method. One is the gate-tuned ...
... re-configurability and power scalability. As a result, multiple application standards can be satisfied with options for wide gain variation range, small gain error or low power consumption. There are mainly two types of cells designed for the proposed cell-based design method. One is the gate-tuned ...
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... The oscillator frequency is mainly determined by Rt . Ct, provided R2 2Rt and R2 . C2 Rt . Ct. The function of R2 is to minimize the influence of the forward voltage across the input protection diodes on the frequency. The stray capacitance C2 should be kept as small as possible. In consideratio ...
... The oscillator frequency is mainly determined by Rt . Ct, provided R2 2Rt and R2 . C2 Rt . Ct. The function of R2 is to minimize the influence of the forward voltage across the input protection diodes on the frequency. The stray capacitance C2 should be kept as small as possible. In consideratio ...
MAX823-825 - Maxim Part Number Search
... MAX825, a logic low on MR asserts reset. Reset remains asserted while MR is low, and for tRP (200ms nominal) after it returns high. MR has an internal 52kΩ pullup resistor, so it can be left open if not used. This input can be driven with CMOS logic levels or with open-drain/ collector outputs. Conn ...
... MAX825, a logic low on MR asserts reset. Reset remains asserted while MR is low, and for tRP (200ms nominal) after it returns high. MR has an internal 52kΩ pullup resistor, so it can be left open if not used. This input can be driven with CMOS logic levels or with open-drain/ collector outputs. Conn ...
Application Note TLE8110EE
... polarity with the battery. In case of a reverse current it is possible destroy the Zener diode without the polarity protection of an additional diode. A Zener diode with nominal 3A and 39V was selected to ensure operation is always below the minimum clamping voltage of the TLE8110EE. For the normal ...
... polarity with the battery. In case of a reverse current it is possible destroy the Zener diode without the polarity protection of an additional diode. A Zener diode with nominal 3A and 39V was selected to ensure operation is always below the minimum clamping voltage of the TLE8110EE. For the normal ...
74AVCH16T245 1. General description 16-bit dual supply translating transceiver with configurable
... The 74AVCH16T245 is a 16-bit transceiver with bidirectional level voltage translation and 3-state outputs.The device can be used as two 8-bit transceivers or as a 16-bit transceiver. It has dual supplies (VCC(A) and VCC(B)) for voltage translation and four 8-bit input-output ports (nAn, nBn) each wi ...
... The 74AVCH16T245 is a 16-bit transceiver with bidirectional level voltage translation and 3-state outputs.The device can be used as two 8-bit transceivers or as a 16-bit transceiver. It has dual supplies (VCC(A) and VCC(B)) for voltage translation and four 8-bit input-output ports (nAn, nBn) each wi ...
74AVCH4T245 1. General description 4-bit dual supply translating transceiver with configurable
... 3.3 V). Pins nAn, nOE and nDIR are referenced to VCC(A) and pins nBn are referenced to VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows transmission from nBn to nAn. The output enable input (nOE) can be used to disable the outputs so the buses are effectively isola ...
... 3.3 V). Pins nAn, nOE and nDIR are referenced to VCC(A) and pins nBn are referenced to VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows transmission from nBn to nAn. The output enable input (nOE) can be used to disable the outputs so the buses are effectively isola ...
74AVCH20T245 1. General description 20-bit dual supply translating transceiver with configurable
... HIGH on a 1DIR allows transmission from 1An to 1Bn and a LOW on 1DIR allows transmission from 1Bn to 1An. A HIGH on nOE causes the outputs to assume a HIGH impedance OFF-state. The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preve ...
... HIGH on a 1DIR allows transmission from 1An to 1Bn and a LOW on 1DIR allows transmission from 1Bn to 1An. A HIGH on nOE causes the outputs to assume a HIGH impedance OFF-state. The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preve ...
General Description Features
... (VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4) ...
... (VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4) ...
74AVCH8T245 1. General description 8-bit dual supply translating transceiver with configurable
... 2.5 V and 3.3 V). Pins An, OE and DIR are referenced to VCC(A) and pins Bn are referenced to VCC(B). A HIGH on DIR allows transmission from An to Bn and a LOW on DIR allows transmission from Bn to An. The output enable input (OE) can be used to disable the outputs so the buses are effectively isolat ...
... 2.5 V and 3.3 V). Pins An, OE and DIR are referenced to VCC(A) and pins Bn are referenced to VCC(B). A HIGH on DIR allows transmission from An to Bn and a LOW on DIR allows transmission from Bn to An. The output enable input (OE) can be used to disable the outputs so the buses are effectively isolat ...
high frequency noise in cmos low noise amplifiers
... Contrary to the common assumption that drain current exhibits only 1/f and white channel thermal noise contributions, this study demonstrates that the substrate generates thermal fluctuations that produce additive channel noise, amplified by the substrate transconductance. This component produces an ...
... Contrary to the common assumption that drain current exhibits only 1/f and white channel thermal noise contributions, this study demonstrates that the substrate generates thermal fluctuations that produce additive channel noise, amplified by the substrate transconductance. This component produces an ...
Test Structures for Benchmarking the Electrostatic
... The purpose of establishing an electrostatic discharge (ESD) technology benchmarking strategy is to reduce costs, accelerate product-to-market, and provide ESD-robust designs in the U.S. semiconductor industry. This document defines a set of standard test structures for evaluating the ESD robustness ...
... The purpose of establishing an electrostatic discharge (ESD) technology benchmarking strategy is to reduce costs, accelerate product-to-market, and provide ESD-robust designs in the U.S. semiconductor industry. This document defines a set of standard test structures for evaluating the ESD robustness ...