
MAX5099 Dual, 2.2MHz, Automotive Synchronous Buck Converter with 80V Load-Dump Protection General Description
... The MAX5099 offers a dual-output, high-switching-frequency DC-DC buck converter with an integrated highside switch. The MAX5099 integrates two low-side MOSFET drivers to allow each converter to drive an external synchronous-rectifier MOSFET. Converter 1 delivers up to 2A output current, and converte ...
... The MAX5099 offers a dual-output, high-switching-frequency DC-DC buck converter with an integrated highside switch. The MAX5099 integrates two low-side MOSFET drivers to allow each converter to drive an external synchronous-rectifier MOSFET. Converter 1 delivers up to 2A output current, and converte ...
Unit 7 : A/D and D/A Converter
... Note that the staircase has 16 levels corresponding to the 16 input states, but there are only 15 steps or jumps between the 0-V level and full-scale, In general, for an N-bit DAC the number of different levels will be 2N, and the number of steps will be 2N - 1. You may have already figured out the ...
... Note that the staircase has 16 levels corresponding to the 16 input states, but there are only 15 steps or jumps between the 0-V level and full-scale, In general, for an N-bit DAC the number of different levels will be 2N, and the number of steps will be 2N - 1. You may have already figured out the ...
$doc.title
... The MC574HC4046A is similar in function to the MC14046 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC4046A phase–locked loop contains three phase comparators, a voltage–controlled oscillator ( ...
... The MC574HC4046A is similar in function to the MC14046 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC4046A phase–locked loop contains three phase comparators, a voltage–controlled oscillator ( ...
ADS1202 数据资料 dataSheet 下载
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
Phase-Locked Loop MC74HC4046A
... The MC574HC4046A is similar in function to the MC14046 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC4046A phase–locked loop contains three phase comparators, a voltage–controlled oscillator ( ...
... The MC574HC4046A is similar in function to the MC14046 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC4046A phase–locked loop contains three phase comparators, a voltage–controlled oscillator ( ...
RT8168B - igorx.irk.ru
... Pulse Width Modulation Specification to support both CPU core and GPU core power. This part adopts G-NAVPTM (Green-Native AVP), which is a Richtek proprietary topology derived from finite DC gain compensator in constant ontime control mode. G-NAVPTM makes this part an easy setting PWM controller to ...
... Pulse Width Modulation Specification to support both CPU core and GPU core power. This part adopts G-NAVPTM (Green-Native AVP), which is a Richtek proprietary topology derived from finite DC gain compensator in constant ontime control mode. G-NAVPTM makes this part an easy setting PWM controller to ...
Variation-Aware Supply Voltage Assignment for Minimizing Circuit Degradation and Leakage Xiaoming Chen
... total power consumption. During circuit operation time, NBTIinduced Vth degradation and process variations may severely affect the leakage power. The variations may cause the leakage magnitude and distribution to become larger and wider [3, 4]. So how to accurately analyze and reduce leakage power u ...
... total power consumption. During circuit operation time, NBTIinduced Vth degradation and process variations may severely affect the leakage power. The variations may cause the leakage magnitude and distribution to become larger and wider [3, 4]. So how to accurately analyze and reduce leakage power u ...
MXL1543 +5V Multiprotocol, 3Tx/3Rx, Software- Selectable Clock/Data Transceivers General Description
... The MXL1543 is a three-driver/three-receiver multiprotocol transceiver that operates from a +5V single supply. The MXL1543, along with the MXL1544/MAX3175 and the MXL1344A, form a complete software-selectable data terminal equipment (DTE) or data communication equipment (DCE) interface port that sup ...
... The MXL1543 is a three-driver/three-receiver multiprotocol transceiver that operates from a +5V single supply. The MXL1543, along with the MXL1544/MAX3175 and the MXL1344A, form a complete software-selectable data terminal equipment (DTE) or data communication equipment (DCE) interface port that sup ...
BDTIC ICE3B0365J-T CoolSET -F3
... Start Phase takes place between 0.8V and 3.1V. Above VSoftsS = 3.1V there is no longer duty cycle limitation DCmax which is controlled by comparator C7 since comparator C2 blocks the gate G7 (see Figure 5).This maximum charge current in the very first stage when VSoftS is below 0.8V, is limited to 0 ...
... Start Phase takes place between 0.8V and 3.1V. Above VSoftsS = 3.1V there is no longer duty cycle limitation DCmax which is controlled by comparator C7 since comparator C2 blocks the gate G7 (see Figure 5).This maximum charge current in the very first stage when VSoftS is below 0.8V, is limited to 0 ...
SN74S374 数据资料 dataSheet 下载
... the enable (C or CLK) input is high, the Q outputs follow the data (D) inputs. When C or CLK is taken low, the output is latched at the level of the data that was set up. ...
... the enable (C or CLK) input is high, the Q outputs follow the data (D) inputs. When C or CLK is taken low, the output is latched at the level of the data that was set up. ...
Capacitance in ac circuits
... (a) improve the power factor (b) improve the light colour (c) limit the current drawn by the lamp (d) fix the fitting to a vertical surface 11 Adding an inductor in series with an existing inductor will: (a) increase the impedance and decrease the inductance of the circuit (b) increase the impedance ...
... (a) improve the power factor (b) improve the light colour (c) limit the current drawn by the lamp (d) fix the fitting to a vertical surface 11 Adding an inductor in series with an existing inductor will: (a) increase the impedance and decrease the inductance of the circuit (b) increase the impedance ...
Phys241ManualUnit3
... Write a "mini-report" for this section of the lab manual. Describe what you did succinctly, and then what you found accurately. Then explain what the result means and how it relates to some of the concepts in the previous section. You must write using sentences & paragraphs; bulleted lists are unacc ...
... Write a "mini-report" for this section of the lab manual. Describe what you did succinctly, and then what you found accurately. Then explain what the result means and how it relates to some of the concepts in the previous section. You must write using sentences & paragraphs; bulleted lists are unacc ...
Supplemental Material 1
... electrochemically formed as a thin layer of oxide. The thin layer of oxide and high surface area of the porous sintered material gives this type a very high capacitance per unit volume. The anode electrode is formed of a chemically deposited semi-conductive layer of manganese dioxide, which is then ...
... electrochemically formed as a thin layer of oxide. The thin layer of oxide and high surface area of the porous sintered material gives this type a very high capacitance per unit volume. The anode electrode is formed of a chemically deposited semi-conductive layer of manganese dioxide, which is then ...
3.3 V, 50 Mbps to 4.25 Gbps, Single-Loop, Laser Diode Driver ADN2871
... provided by a microcontroller DAC or by a trimmable resistor or digital potentiometer. The average power control loop is implemented using feedback from a monitor photodiode. The part provides bias and modulation current monitoring as well as fail alarms and automatic laser shutdown (ALS). The devic ...
... provided by a microcontroller DAC or by a trimmable resistor or digital potentiometer. The average power control loop is implemented using feedback from a monitor photodiode. The part provides bias and modulation current monitoring as well as fail alarms and automatic laser shutdown (ALS). The devic ...
LT1363 - 70MHz, 1000V/µs Op Amp
... typical performance curves.The photo of the small-signal response with 200pF load shows 62% peaking. The largesignal response with a 10,000pF load shows the output slew rate being limited to 10V/µs by the short-circuit current. Coaxial cable can be driven directly, but for best pulse fidelity a resi ...
... typical performance curves.The photo of the small-signal response with 200pF load shows 62% peaking. The largesignal response with a 10,000pF load shows the output slew rate being limited to 10V/µs by the short-circuit current. Coaxial cable can be driven directly, but for best pulse fidelity a resi ...
Electrical Evaluation of the Taser M-26 Stun Weapon
... This evaluation was commissioned by the Israel National Police (represented by Special Technologies Officer, Superintendent Tiberiu Roth ) for the purpose of comparing the performance of the Taser M26 Stun Weapon to the specifications published by the manufacturer (Taser International Inc., Scottsda ...
... This evaluation was commissioned by the Israel National Police (represented by Special Technologies Officer, Superintendent Tiberiu Roth ) for the purpose of comparing the performance of the Taser M26 Stun Weapon to the specifications published by the manufacturer (Taser International Inc., Scottsda ...
instruction manual - Davidson Sales Shop
... On prime mover applications that require a long time to reach rated RPM, a speed switch setting should be coordinated such that input voltage applied to the SSR is above the SSR minimum residual build-up level. The minimum residual build-up level is 6 Vac for the SSR32-12 and SSR63-12, and 12 Vac fo ...
... On prime mover applications that require a long time to reach rated RPM, a speed switch setting should be coordinated such that input voltage applied to the SSR is above the SSR minimum residual build-up level. The minimum residual build-up level is 6 Vac for the SSR32-12 and SSR63-12, and 12 Vac fo ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.