
74VHC574 Octal D-Type Flip-Flop with 3-STATE Outputs 7 4
... The VHC574 is an advanced high speed CMOS octal flipflop with 3-STATE output fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This 8-bit D-type flip-flop is controlled by a ...
... The VHC574 is an advanced high speed CMOS octal flipflop with 3-STATE output fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This 8-bit D-type flip-flop is controlled by a ...
Pilawa-Podgurski, R.P., and D.J. Perreault, “Merged Two-Stage Power Converter with Soft-Charging Switched-Capacitor Stage in 180 nm CMOS,” 2011 European Solid State Circuits Conference , pp. 479-482, Sept. 2011.
... longer restricted to keep the capacitor voltage ripple small for efficiency reasons, and can more effectively utilize the energy stored on the capacitors (enabling reduced switching frequency or capacitor size). In the circuit of Fig. 1, the high frequency regulation stage (a synchronous buck conver ...
... longer restricted to keep the capacitor voltage ripple small for efficiency reasons, and can more effectively utilize the energy stored on the capacitors (enabling reduced switching frequency or capacitor size). In the circuit of Fig. 1, the high frequency regulation stage (a synchronous buck conver ...
Lecture Circuits
... bank feeds a logic circuit that generates a code for each voltage range. Direct conversion is very fast, but usually has only 8 bits of resolution (255 comparators - since the number of comparators required is 2n - 1) or fewer, as it needs a large, expensive circuit. A successive-approximation ADC u ...
... bank feeds a logic circuit that generates a code for each voltage range. Direct conversion is very fast, but usually has only 8 bits of resolution (255 comparators - since the number of comparators required is 2n - 1) or fewer, as it needs a large, expensive circuit. A successive-approximation ADC u ...
DM74LS32 Quad 2-Input OR Gate - Inf
... 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300 Wide Package Number N14A ...
... 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300 Wide Package Number N14A ...
Lab 1 - University of California, San Diego
... Note: Each student has to turn in this assignment. Due Friday Jan. 17 in the class. Attach the simulation circuit and all simulation results to your work. Plots should be done by computer and/or by hand on graph paper. ...
... Note: Each student has to turn in this assignment. Due Friday Jan. 17 in the class. Attach the simulation circuit and all simulation results to your work. Plots should be done by computer and/or by hand on graph paper. ...
Controlling and Monitoring Power-One Bricks and SIPs with Lattice
... As the semiconductor industry continues to improve both the speed and density of integrated circuits, the need for lower voltage and higher current power supplies has also increased. Along with the need for more power, many processors, ASICs, FPGAs, and modules require separate power supply voltages ...
... As the semiconductor industry continues to improve both the speed and density of integrated circuits, the need for lower voltage and higher current power supplies has also increased. Along with the need for more power, many processors, ASICs, FPGAs, and modules require separate power supply voltages ...
RB151 - Rectron Semiconductor
... RATING AND CHARACTERISTIC CURVES ( RB151 THRU RB157 ) FIG. 2 - TYPICAL FORWARD CURRENT ...
... RATING AND CHARACTERISTIC CURVES ( RB151 THRU RB157 ) FIG. 2 - TYPICAL FORWARD CURRENT ...
Power MOSFET Gate Driver Circuits using High Current
... driver circuitry acts as a low impedance voltage source, to enable the gate capacitance to be charged and discharged as quickly as possible. It must also have the capability of sourcing and sinking high transient gate currents - possibly several amps, in tens of nanoseconds. Standard logic family ga ...
... driver circuitry acts as a low impedance voltage source, to enable the gate capacitance to be charged and discharged as quickly as possible. It must also have the capability of sourcing and sinking high transient gate currents - possibly several amps, in tens of nanoseconds. Standard logic family ga ...
Low Temperature Effects on CMOS Circuits
... can typically handle up 0.15 amperes [1]. For Type II superconductors (hybrid but having higher TC s), the current density (and current tolerance) is substantially higher. C. Latchup The problem of latchup occurs when electrons take a path that was not intended. As transistor manufacturing is not an ...
... can typically handle up 0.15 amperes [1]. For Type II superconductors (hybrid but having higher TC s), the current density (and current tolerance) is substantially higher. C. Latchup The problem of latchup occurs when electrons take a path that was not intended. As transistor manufacturing is not an ...
Reduction of Ground Bounce Noise in 14T Full Adder P.Balasubramanyam
... In sleep Transistor Technique cut off transistor (pull-up or pull-down transistors or both) networks from supply voltage or ground using sleep transistors. These types of techniques are also called gating Vdd and gating-GND (note that a gating clock is generally used for dynamic power reduction).It. ...
... In sleep Transistor Technique cut off transistor (pull-up or pull-down transistors or both) networks from supply voltage or ground using sleep transistors. These types of techniques are also called gating Vdd and gating-GND (note that a gating clock is generally used for dynamic power reduction).It. ...
1_Power_parts
... Controlled Thyristor (MCT) is voltage controlled fully controllable thyristor. The MCT is similar in operation with GTO thyristor, but it has voltage controlled insulated gate. It has two MOSFETs in its equivalent circuit. One is responsible for turn-on and the another is responsible for turn-of ...
... Controlled Thyristor (MCT) is voltage controlled fully controllable thyristor. The MCT is similar in operation with GTO thyristor, but it has voltage controlled insulated gate. It has two MOSFETs in its equivalent circuit. One is responsible for turn-on and the another is responsible for turn-of ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.