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Lecture 17
Lecture 17

UT54ACS00E - Aeroflex Microelectronic Solutions
UT54ACS00E - Aeroflex Microelectronic Solutions

... The UT54ACS00E is a performance and voltage enhanced version of the UT54ACS00 quadruple, two-input NAND gate. The circuit performs the Boolean functions Y = A⋅B or Y = A + B in positive logic. ...
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... magnitude. A tail current control is then implemented by M9 to provide the appropriate DC current for the differential pairs. To avoid the noise contribution from M9 and its current source, a large bypass capacitance Cbypass is added [16]. Without the capacitor the noise from the M9 and the noise co ...
Full-Text PDF
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... noiseless accumulation enables good SNR. However, the charge transfer efficiency and full well capacity, which strongly depend on process, limit its momentum of development [6,7]. With respect to the analog-domain accumulation scheme, the generated signals from pixels are firstly accumulated by the ...
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... transistor and compare to a resistor biased circuit. For each circuit three different loads consisting of a red, green and blue LED will be used. In this section we will look at current stability through an LED using a voltage divider biased transistor circuit as a current source. ...
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... shot noise, regardless of the ratio of voltage and temperature. In contrast, the second cumulant levels off at the thermal noise for low voltages. The first experiments on the voltage dependence of the third cumulant of tunnel noise have now been reported [4]. The pictures are strikingly different f ...
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... protections are implemented as auto-restart. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes VCC to fall. When VCC falls to the Under-Voltage Lockout (UVLO) stop voltage of 7.5V, the protection is reset and the startup circuit charges the VCC c ...
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... 2) You have a 200-Ω resistor, a 0.400-H inductor, a 6.00-μF capacitor and a voltage source that has a voltage amplitude of 30.0 V and an angular frequency of 250 rad/s. The resistor, inductor, capacitor, and voltage source are connected to form an L-R-C series circuit. The current is given by I = I ...
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... infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time with ...
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... The rate of electric current through a wire is how much charge passes a place in a certain amount of time (One coulomb per second = 1 amp). The unit used for the rate of electric current is the ampere. The name can be shortened to amp or A. ...
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... the frequency increases • For dc (f = 0 Hz) – Impedance of the capacitor is infinite ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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