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Design of JK Flip-Flop using MODFET Technology
Design of JK Flip-Flop using MODFET Technology

UC2950 数据资料 dataSheet 下载
UC2950 数据资料 dataSheet 下载

... high-current switching with low saturation voltages when activated by low-level logic signals. Source and sink switches may be independently activated without regard to timing as a built-in interlock will keep the sink off if the source is on. ...
2011. Lecture 2
2011. Lecture 2

Power Factor Correction Module
Power Factor Correction Module

... load after some period of time that depends on the size of the hold-up capacitor. If the AC source voltage is present but it is below its continuous minimum input voltage limit, the PFCQor will still draw whatever power it can (within its current limits) from the AC source. This power may not be eno ...
LT1719 - 4.5ns Single/Dual Supply 3V/5V Comparator with Rail-to-Rail Output
LT1719 - 4.5ns Single/Dual Supply 3V/5V Comparator with Rail-to-Rail Output

... dramatically, to as much as 15mV each. The input bias currents will also increase. When both input signals are above the positive common mode limit, the input stage will get debiased and the output polarity will be random. However, the internal hysteresis will hold the output to a valid logic level. ...
Line Transformer - Selection Guide
Line Transformer - Selection Guide

MINISTRY OF SCIENCE AND TECHNOLOGY  DEPARTMENT OF TECHNICAL AND VOCATIONAL EDUCATION
MINISTRY OF SCIENCE AND TECHNOLOGY DEPARTMENT OF TECHNICAL AND VOCATIONAL EDUCATION

... also that the integrator input has two signals applied to it, -Vm cos ωt and vout. If the product R1C1 is set equal to the ratio L/R in the circuit of Fig. 7.4, show that vout equals the voltage across R ( + reference on the left) in Fig. 7.4. ...
EE101-Lect1-Introduction-to-electronic-circuits-3
EE101-Lect1-Introduction-to-electronic-circuits-3

Using Ground Fault Circuit Interrupters with
Using Ground Fault Circuit Interrupters with

“2/3” divider
“2/3” divider

DC Fundamentals, 6-2
DC Fundamentals, 6-2

... DC Fundamentals ...
Basic Physical Concepts
Basic Physical Concepts

Circuit Note CN-0190
Circuit Note CN-0190

... MOSFET is much better than a diode because the low onresistance of the MOSFET minimizes power dissipation. For example, the on-resistance of the SI7461DP is approximately 0.02 Ω for a VGS of −4.5 V. A current of 6.67 A yields a power dissipation of only 0.9 W. A diode with 0.6 V forward drop would d ...
Experiment 2
Experiment 2

... 9) It can be shown mathematically that the average power will equal exactly one-half the peak instantaneous power. The average power is equivalent to that supplied to the two ohm resistor from a DC source. If 2500 Watts were dissipated by a 2 Ohm resistor, supplied by a DC source, what would the DC ...
LM117/LM317A/LM317 3-Terminal Adjustable Regulator General Description
LM117/LM317A/LM317 3-Terminal Adjustable Regulator General Description

LM117/LM317A/LM317 3-Terminal Adjustable Regulator
LM117/LM317A/LM317 3-Terminal Adjustable Regulator

... the capacitors from discharging through low current points into the regulator. Most 10 µF capacitors have low enough internal series resistance to deliver 20A spikes when shorted. Although the surge is short, there is enough energy to damage parts of the IC. When an output capacitor is connected to ...
PDF
PDF

Using a Multimeter to Analyze a Circuit
Using a Multimeter to Analyze a Circuit

Solution
Solution

mathlab file for series rc circuit
mathlab file for series rc circuit

... In the computer modelling of circuit behaviour, the effects of internal resistance of the source can be considered. Suitable electrical sources include step, on/off/on, sinusoidal and pulsed functions. ...
Owners Manual PDF
Owners Manual PDF

... right to change or improve the design of the product at any time without prior notice. This warranty does not cover claims for damage due to abuse, neglect, alteration or attempted repair by unauthorized personnel, and is limited to failures arising during normal use that are due to defects in mater ...
View File
View File

Document
Document

... To suppress the error introduced by channel length modulation effect, cascode current mirrors can be used. The key idea of cascode current mirror is to match the VDS of two bottom transistors, M1 and M2. VDD IREF ...
Assessment for fundamentals of electricity ( 20 points) True or False
Assessment for fundamentals of electricity ( 20 points) True or False

PSI - Geetanjali Institute of Technical Studies
PSI - Geetanjali Institute of Technical Studies

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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