
AD8610/AD8620 Precision, Very Low Noise, Low Input Bias Current
... Unlike many JFET amplifiers, the AD8610/AD8620 input bias current is low over the entire operating temperature range. The AD8610/AD8620 is stable with capacitive loads of over 1000 pF in noninverting unity gain; much larger capacitive loads can be driven easily at higher noise gains. The AD8610/AD86 ...
... Unlike many JFET amplifiers, the AD8610/AD8620 input bias current is low over the entire operating temperature range. The AD8610/AD8620 is stable with capacitive loads of over 1000 pF in noninverting unity gain; much larger capacitive loads can be driven easily at higher noise gains. The AD8610/AD86 ...
Sink/Source DDR Termination Regulator
... The TPS51200 is a sink/source tracking termination regulator specifically designed for low input voltage, low-cost, and low external component count systems where space is a key application parameter. The TPS51200 integrates a high-performance, low-dropout (LDO) linear regulator that is capable of b ...
... The TPS51200 is a sink/source tracking termination regulator specifically designed for low input voltage, low-cost, and low external component count systems where space is a key application parameter. The TPS51200 integrates a high-performance, low-dropout (LDO) linear regulator that is capable of b ...
Chapter 4 (Techniques of Circuit Analysis)
... • Understand and be able to use the node-voltage method to solve a circuit; • Understand and be able to use the mesh-current method to solve a circuit; • Be able to determine which technique is best for a particular circuit; • Understand source transformations and be able to use them to simplify ...
... • Understand and be able to use the node-voltage method to solve a circuit; • Understand and be able to use the mesh-current method to solve a circuit; • Be able to determine which technique is best for a particular circuit; • Understand source transformations and be able to use them to simplify ...
Bounce Diagrams
... In this case, the reflection coefficient at the load end is 1 and the reflection coefficient at the source end is -1. When the switch closes, a 10V signal travels to the load end, is 100% reflected and charges the line to 20V on the return trip. The 10V returning signal is reflected at the source as ...
... In this case, the reflection coefficient at the load end is 1 and the reflection coefficient at the source end is -1. When the switch closes, a 10V signal travels to the load end, is 100% reflected and charges the line to 20V on the return trip. The 10V returning signal is reflected at the source as ...
MAX1687 Step-Up DC-DC Converters with Precise, Adaptive Current Limit for GSM General Description
... switching noise. The switching frequency of the MAX1687/MAX1688, controlled by the selected inductor, can exceed 1MHz. Two external resistors set the output voltage from 1.25V to 6V. The MAX1687 controls peak battery current, while the MAX1688 features a more advanced, adaptive constantrecharge-time ...
... switching noise. The switching frequency of the MAX1687/MAX1688, controlled by the selected inductor, can exceed 1MHz. Two external resistors set the output voltage from 1.25V to 6V. The MAX1687 controls peak battery current, while the MAX1688 features a more advanced, adaptive constantrecharge-time ...
Slide 1
... In electronics, power is equal to current X voltage. The units for power is WATTS. The symbol for power is W. In our water analogy, power is equal to water flow X pressure. You can see from the picture that more water flow will mean more force, and more pressure will mean more force. ...
... In electronics, power is equal to current X voltage. The units for power is WATTS. The symbol for power is W. In our water analogy, power is equal to water flow X pressure. You can see from the picture that more water flow will mean more force, and more pressure will mean more force. ...
MIC2860-D - Microchip
... battery life for portable display backlighting, and keypad backlighting in low cost mobile devices. The MIC2860-2D architecture provides the highest possible efficiency by eliminating switching losses present in traditional charge pumps or inductive boost circuits. It features a typical dropout of 5 ...
... battery life for portable display backlighting, and keypad backlighting in low cost mobile devices. The MIC2860-2D architecture provides the highest possible efficiency by eliminating switching losses present in traditional charge pumps or inductive boost circuits. It features a typical dropout of 5 ...
Module 2_Network Theorems
... • Step-2: Determine the output (current or voltage) due to the single source acting alone using the techniques discussed in previous lecture. • Step-3: Repeat steps 1 and 2 for each of the other independent sources. • Step-4: Find the total contribution by adding algebraically all the contributions ...
... • Step-2: Determine the output (current or voltage) due to the single source acting alone using the techniques discussed in previous lecture. • Step-3: Repeat steps 1 and 2 for each of the other independent sources. • Step-4: Find the total contribution by adding algebraically all the contributions ...
T1000256-v2 - DCC
... The RF Distribution Amplifier comes with a number of different power supply boards so I will assume that we are using the latest which is the Low Noise Power Module (D0901846) with the RF Distribution Amplifier :Interface (D1000064). 1) Verify the proper current draw. Using a bench DC supply apply ± ...
... The RF Distribution Amplifier comes with a number of different power supply boards so I will assume that we are using the latest which is the Low Noise Power Module (D0901846) with the RF Distribution Amplifier :Interface (D1000064). 1) Verify the proper current draw. Using a bench DC supply apply ± ...
UCC3888 数据资料 dataSheet 下载
... Uses Low-Cost SMD Inductors Short Circuit Protected Optional Isolation Capability ...
... Uses Low-Cost SMD Inductors Short Circuit Protected Optional Isolation Capability ...
MAX1779 Low-Power Triple-Output TFT LCD DC-DC Converter General Description
... Main Boost Integrator Output. If used, connect 2200pF to analog ground (GND). To disable integrator, connect to REF. Supply Input. +2.7V to +5.5V input range. Bypass with a 0.1μF capacitor between IN and GND, as close to the pins as possible. ...
... Main Boost Integrator Output. If used, connect 2200pF to analog ground (GND). To disable integrator, connect to REF. Supply Input. +2.7V to +5.5V input range. Bypass with a 0.1μF capacitor between IN and GND, as close to the pins as possible. ...
Tips to Achieve balanced design for Automotive Off
... 4 -V to 40-V Wide Vin Input Voltage Range With up to 45-V Transient Maximum Output current 450mA ...
... 4 -V to 40-V Wide Vin Input Voltage Range With up to 45-V Transient Maximum Output current 450mA ...
Adapting the "Ultra-L= WHl - technicalaudio.com
... feedback phase characteristics and increase the stability margin of the amplificl'. Th e output stage is coupled to the driver t hrough a resistance capacity network which prov ides conventional RC coupling at s ig nal frequencies and an attenuated direct coupling at subsonic frequencies . This aga ...
... feedback phase characteristics and increase the stability margin of the amplificl'. Th e output stage is coupled to the driver t hrough a resistance capacity network which prov ides conventional RC coupling at s ig nal frequencies and an attenuated direct coupling at subsonic frequencies . This aga ...
2.2-MHz, 60-V OUTPUT STEP UP DC/DC CONVERTER (Rev. B)
... The device can be configured as a switch mode stepup power supply with voltage supervisor. Once the internal circuits have stabilized with a minimum input supply of 3.6 V, the system can then have an input voltage range from 1.5 V to 40 V, to maintain a fixed boost output voltage. For optimum perfor ...
... The device can be configured as a switch mode stepup power supply with voltage supervisor. Once the internal circuits have stabilized with a minimum input supply of 3.6 V, the system can then have an input voltage range from 1.5 V to 40 V, to maintain a fixed boost output voltage. For optimum perfor ...
Semicunductor by saradindu ghose for plus 2 physics
... Fig. (a) shows that the channel is made of p-type semiconductor material and the substrate is made of n-type semiconductor material. Fig. (b) shows the schematic symbol. ...
... Fig. (a) shows that the channel is made of p-type semiconductor material and the substrate is made of n-type semiconductor material. Fig. (b) shows the schematic symbol. ...
AD8553 数据手册DataSheet 下载
... performance. The continuous autocorrection provides great CMR and PSR performances over the entire operating temperature range (−40°C to +85°C). The parasitic resistance in series with R2 does not degrade CMR but causes a small gain error and a very small offset error. Therefore, an external buffer ...
... performance. The continuous autocorrection provides great CMR and PSR performances over the entire operating temperature range (−40°C to +85°C). The parasitic resistance in series with R2 does not degrade CMR but causes a small gain error and a very small offset error. Therefore, an external buffer ...
a 14-Bit, 125 MSPS TxDAC D/A Converter
... The AD9764’s flexible single-supply operating range of 2.7 V to 5.5 V and low power dissipation are well suited for portable and low power applications. Its power dissipation can be further reduced to a mere 45 mW with a slight degradation in performance by lowering the full-scale current output. Al ...
... The AD9764’s flexible single-supply operating range of 2.7 V to 5.5 V and low power dissipation are well suited for portable and low power applications. Its power dissipation can be further reduced to a mere 45 mW with a slight degradation in performance by lowering the full-scale current output. Al ...
Data Sheet DB EN IB IL 24/48 DOR 2/W (-PAC)
... on the proportion of the element, switching these loads results in a larger or smaller load on the switch contact. In practice, loads are generally used with a large inductive element, such as contacts, solenoid valves, motors, etc. Due to the energy stored in the coils, voltage peaks of up to sever ...
... on the proportion of the element, switching these loads results in a larger or smaller load on the switch contact. In practice, loads are generally used with a large inductive element, such as contacts, solenoid valves, motors, etc. Due to the energy stored in the coils, voltage peaks of up to sever ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.