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Emitter Characteristic - Cleveland Institute of Electronics
Emitter Characteristic - Cleveland Institute of Electronics

... the vertical axis includes various values of IC  Each line represents all possible ...
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Applications of Low Power Current and Voltage Sensors

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... controllers) • Given a continuous, linear time domain description of a process, it is possible to approximate the process with Difference Equations and implement in software • Time Step size (and/or Sampling Rate) is/are critical to the accuracy of the ...
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... A combination of parallel branches is often called a bank. Radio operators often use a device called a dummy load (we will go into detail about dummy loads later). A dummy load is typically just a resistance of 50 ohms which is connected to the antenna socket of a transmitter for tuning purposes. Th ...
AN3257
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... Pin 5 EOLP: is a 2 V reference and allows programming of the window comparator of pin6 (EOL) according to table 5 of the L6585DE datasheet. Working in CTR tracking configuration and choosing a window voltage amplitude ± 240 mV, R8=240 kΩ was inserted. Pin 6 EOL: is the input for the window comparato ...
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... Initially, this causes exponential growth of the current. After some length of time, electrons and holes accumulate at the n- and p-sides of the depletion region, respectively, creating an internal electric field in opposition to the applied bias (arresting the growth of the current). The device rem ...
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... Therefore, in order to achieve good input matching performances over the frequency range 88-108 MHz the unbalanced 50 Ω is to be transformed into an impedance with a value as close as possible to Rp of 5.38 Ω. From the circuit schematic given in Figure 6 , we can see that the input matching network ...
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< 1 ... 938 939 940 941 942 943 944 945 946 ... 1285 >

Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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