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Diode characteristics
Diode characteristics

IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)

IR2175(S) - Infineon
IR2175(S) - Infineon

... VCC = VBS = 15V, and TA = 25o unless otherwise specified. ...
883B - Maxim Integrated
883B - Maxim Integrated

Experiment 1 - Electrical and Computer Engineering
Experiment 1 - Electrical and Computer Engineering

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Choosing the Best ADC Architecture for your
Choosing the Best ADC Architecture for your

... capacitor, CSH, and the switch resistance, RS1. From the time constant, τ = RS1×CSH, we can derive the settling time of this single pole system. The minimum acquisition time for the SAR converter is the time required for the sampling mechanism to capture the input voltage and settle. The required se ...
Design and Analysis of 4x1 MUX and 2x4 Decoder Circuits using
Design and Analysis of 4x1 MUX and 2x4 Decoder Circuits using

PHYS 196 Class Problem 1
PHYS 196 Class Problem 1

DS32KHz 32.768 KHz TCXO
DS32KHz 32.768 KHz TCXO

... * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. The Dallas ...
Amateur Radio Technician Class Element 2 Course Presentation
Amateur Radio Technician Class Element 2 Course Presentation

Name
Name

... from your body to the other thing.  Called static electricity. o “Static”- means unmoving. The electrons just hang out in your body for a while. Q: What’s a Coulomb?  A coulomb is a way to tell the amount of charge in an object. 1 Coulomb = 6.241506×1018 electrons  Coulomb's Law is one of the bas ...
Document
Document

... • To make an electronic device (like a radio) do something useful (like a receiver), we need to control and manipulate the flow of current. • There are a number of different electronic components that we use to do this. ...
Built-in Bypass FET Synchronous-Rectification-Type PFM
Built-in Bypass FET Synchronous-Rectification-Type PFM

Lab 2 – Stepper Motor
Lab 2 – Stepper Motor

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BDTIC TLF 4277 active antenna supply Product Brief

... The TLF 4277 is a monolithic integrated low drop out voltage regulator capable of supplying loads up to 200 mA. For an input voltage up to 40 V the TLF 4277 provides an adjustable output voltage in a range from 5 V up to 12 V. The integrated current monitor function is a unique feature that provides ...
AP Physics 2 Electrical Circuits 2015-16
AP Physics 2 Electrical Circuits 2015-16

impedance mismatches and relections
impedance mismatches and relections

... terminating a transmission line are incapable of absorbing power from a forward, or incident wave. Thus, all incident current and voltage are reflected back toward the source.” It’s sometimes difficult to understand why this happens. Intuition suggests that a short at the end of the line will short- ...
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Silicon Carbide Power Electronic Devices

LM2930 3-Terminal Positive Regulator (Rev. D)
LM2930 3-Terminal Positive Regulator (Rev. D)

... Dropout Voltage: The input-output voltage differential at which the circuit ceases to regulate against further reduction in input voltage. Measured when the output voltage has dropped 100 mV from the nominal value obtained at 14V input, dropout voltage is dependent upon load current and junction tem ...
Doble M4110 Equipment Specifications
Doble M4110 Equipment Specifications

... The leakage reactance within a transformer is sensitive to the geometrical changes in the leakage flux path. The leakage flux path is predominantly made up of space between the winding, space within the winding, and space between the winding and the tank wall. The short-circuit impedance of a transf ...
compensation for non-active current components at mains supply
compensation for non-active current components at mains supply

L1 THE GEIGER COUNTER
L1 THE GEIGER COUNTER

... reducing' the field around the wire to a value below that corresponding to the threshold voltage, and the discharge ceases. The positive ion sheath then moves outwards until the critical radius r is reached, when the field at the wire is restored to the threshold value. This marks the end of the tru ...
RPR-220UC30N
RPR-220UC30N

... COLLECTOR−EMITTER : VCE (V) ...
ElectronicsLab15.pdf
ElectronicsLab15.pdf

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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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