1 - s3.amazonaws.com
... which is the element gjj of G matrix, is the sum of all the conductances connected to node j. The coefficient of any other node voltage, say i (ij), is the negative of the sum of the conductances connected directly between node j and node i. The right hand side of the equation is equal to the sum o ...
... which is the element gjj of G matrix, is the sum of all the conductances connected to node j. The coefficient of any other node voltage, say i (ij), is the negative of the sum of the conductances connected directly between node j and node i. The right hand side of the equation is equal to the sum o ...
bq24707/25/26 Input Voltage DPM
... As discussed in the previous section, the proper voltage at ILIM is between VILIM_FALL (0.75 mV) or VILIM_RISE (105 mV) and 1.6 V. The relationship between VILIM and the charging current is given in Equation 1. In this design example, a 0.96-A charging current is chosen with which to charge the batt ...
... As discussed in the previous section, the proper voltage at ILIM is between VILIM_FALL (0.75 mV) or VILIM_RISE (105 mV) and 1.6 V. The relationship between VILIM and the charging current is given in Equation 1. In this design example, a 0.96-A charging current is chosen with which to charge the batt ...
Y04408126132
... leading current with respect to voltage by controlling the field current. In the same manner, we can vary the DC link voltage and control it. If the magnitude of voltage developed by DSTATCOM is larger than the three phase voltage, then the current shall flow from the DSTATCOM to the system. In this ...
... leading current with respect to voltage by controlling the field current. In the same manner, we can vary the DC link voltage and control it. If the magnitude of voltage developed by DSTATCOM is larger than the three phase voltage, then the current shall flow from the DSTATCOM to the system. In this ...
功率变换
... 1. Maximum power output with DSS 2. “A” Versions Have a 50% Max Duty Cycle for Forward Topologies 3. Only Available on “A” Versions 4. Overvoltage Protection 5. Transient Load Detection * NCP1562 has 100 V startup FET ...
... 1. Maximum power output with DSS 2. “A” Versions Have a 50% Max Duty Cycle for Forward Topologies 3. Only Available on “A” Versions 4. Overvoltage Protection 5. Transient Load Detection * NCP1562 has 100 V startup FET ...
DS13 SSR for loads up to 2A @ 60Vdc Product Facts
... 1.2 terminal input configuration is compatible with CMOS or open collector TTL (with pull-up resistor). For Vcc levels above 6Vdc, a series limiting resistor is required. See Fig. 2 for resistor value. Use standard resistor value equal to or less than value form the curve. 2.Vcc = 5Vdc for all tests ...
... 1.2 terminal input configuration is compatible with CMOS or open collector TTL (with pull-up resistor). For Vcc levels above 6Vdc, a series limiting resistor is required. See Fig. 2 for resistor value. Use standard resistor value equal to or less than value form the curve. 2.Vcc = 5Vdc for all tests ...
STK402-040
... characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an inde ...
... characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an inde ...
H49054650
... voltage quality. PIs controllers were also used as the control technique, while the design method of these PIs is the same as that used in the dc-dc step-up converter. Since the closed-loop cutoff frequency of the PI current controller was chosen one decade below the switching frequency, the PI of t ...
... voltage quality. PIs controllers were also used as the control technique, while the design method of these PIs is the same as that used in the dc-dc step-up converter. Since the closed-loop cutoff frequency of the PI current controller was chosen one decade below the switching frequency, the PI of t ...
A High-Voltage Bidirectional Current Source
... TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguar ...
... TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguar ...
LH0004 LH0004C High Voltage Operational
... Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable f ...
... Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable f ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.