NCP102MBGEVB NCP102 4 W Motherboard Evaluation Board User's Manual
... a TJ of 178°C is calculated. That is slightly higher than the maximum junction temperature of the device and exceeds the derating factor. As RqJA provided in the NTD40N03 datasheet is for a specific layout, we will evaluate the board at full load and use RqJC to calculate TJ. It will be shown that t ...
... a TJ of 178°C is calculated. That is slightly higher than the maximum junction temperature of the device and exceeds the derating factor. As RqJA provided in the NTD40N03 datasheet is for a specific layout, we will evaluate the board at full load and use RqJC to calculate TJ. It will be shown that t ...
BU92001KN
... Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended onl ...
... Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended onl ...
III. Obsrvations and Discussions
... or in respective amplifier circuits are suggested by researchers to conquer this problem [2]-[11]. These efforts include the use of devices different than BJTs or hybrid combination of devices (e.g. BJT-JFET or BJT-MOSFET etc.) in Darlington’s topology and, moreover, using some additional biasing co ...
... or in respective amplifier circuits are suggested by researchers to conquer this problem [2]-[11]. These efforts include the use of devices different than BJTs or hybrid combination of devices (e.g. BJT-JFET or BJT-MOSFET etc.) in Darlington’s topology and, moreover, using some additional biasing co ...
Section 2. The Full Wave Rectifier
... 3. Calculate the value of the series resistor R (R5 in Figure 4) for the shunt regulator with the equation Vin(min) is the minimum input voltage, Vin(min) = Vp – 2*0.7 – Vr, Vp is the peak input voltage or 10 volts in this lab, 0.7 volt is the voltage drop across one diode, Vr can be used as 2 vol ...
... 3. Calculate the value of the series resistor R (R5 in Figure 4) for the shunt regulator with the equation Vin(min) is the minimum input voltage, Vin(min) = Vp – 2*0.7 – Vr, Vp is the peak input voltage or 10 volts in this lab, 0.7 volt is the voltage drop across one diode, Vr can be used as 2 vol ...
SG6742ML/MR Highly Integrated Green-Mode PWM Controller SG6742M L/M
... When the SENSE voltage across sense resistor RS reaches the threshold voltage, around 0.9V, the output GATE drive is turned off after a small delay, tPD. This delay introduces an additional current proportional to tPD • VIN / LP. Since the delay is nearly constant regardless of the input voltage VIN ...
... When the SENSE voltage across sense resistor RS reaches the threshold voltage, around 0.9V, the output GATE drive is turned off after a small delay, tPD. This delay introduces an additional current proportional to tPD • VIN / LP. Since the delay is nearly constant regardless of the input voltage VIN ...
MAX8510/MAX8511/MAX8512 Ultra-Low-Noise, High PSRR, Low-Dropout, 120mA Linear Regulators General Description
... low-dropout, low-quiescent current linear regulators designed for space-restricted applications. The parts are available with preset output voltages ranging from 1.5V to 4.5V in 100mV increments. These devices can supply loads up to 120mA. As shown in the Functional Diagram, the MAX8510/MAX8511 cons ...
... low-dropout, low-quiescent current linear regulators designed for space-restricted applications. The parts are available with preset output voltages ranging from 1.5V to 4.5V in 100mV increments. These devices can supply loads up to 120mA. As shown in the Functional Diagram, the MAX8510/MAX8511 cons ...
UC2853 数据资料 dataSheet 下载
... vents excessive MOSFET gate-to-source voltage so that the UC3853 can be operated with VCC and high as 40V. A series gate resistor of at least 5 ohms should be used to minimize clamp voltage overshoot. In addition, a Schottky diode such as a 1N5818 connected between OUT and GND may be necessary to pr ...
... vents excessive MOSFET gate-to-source voltage so that the UC3853 can be operated with VCC and high as 40V. A series gate resistor of at least 5 ohms should be used to minimize clamp voltage overshoot. In addition, a Schottky diode such as a 1N5818 connected between OUT and GND may be necessary to pr ...
Driving Pockels Cells Using Avalanche Transistor Pulsers
... lowerhalf of the string (the portion closestto the trigger) must be close to the avalanchevoltageof the transistors. 3) The voltagedrop across the zenerdiodes must not exceed the avalanchevoltageof the transistors. Duringeach shot the voltagestored in C4 (See Figure 2 again) is applied to the Pockel ...
... lowerhalf of the string (the portion closestto the trigger) must be close to the avalanchevoltageof the transistors. 3) The voltagedrop across the zenerdiodes must not exceed the avalanchevoltageof the transistors. Duringeach shot the voltagestored in C4 (See Figure 2 again) is applied to the Pockel ...
3000 Series Operation Manual
... Refer to Input Voltage Selector in section 2.2. The tolerance is +10% of the indicated voltage at 50/60 Hz. ...
... Refer to Input Voltage Selector in section 2.2. The tolerance is +10% of the indicated voltage at 50/60 Hz. ...
- About - University of Toronto
... Capacitor-based charge recycling (CCR) has been used for power reduction in various digital circuits and energy harvesting systems [45]–[47]. CCR uses the superior energy density of capacitors and does not rely on additional inductors. CCR is therefore more cost-effective then RGD. In one CCR scheme ...
... Capacitor-based charge recycling (CCR) has been used for power reduction in various digital circuits and energy harvesting systems [45]–[47]. CCR uses the superior energy density of capacitors and does not rely on additional inductors. CCR is therefore more cost-effective then RGD. In one CCR scheme ...
Simulation and Hardware Implementation of DC
... where I and V are the PV array output current and voltage, respectively. The left-hand side of the equations represents the IncCond of the PV module, and the right-hand side represents the instantaneous conductance. From (1)–(3), it is obvious that when the ratio of change in the output conductance ...
... where I and V are the PV array output current and voltage, respectively. The left-hand side of the equations represents the IncCond of the PV module, and the right-hand side represents the instantaneous conductance. From (1)–(3), it is obvious that when the ratio of change in the output conductance ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.