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... low ESR multilayer ceramic chip capacitors to its portfolio of products. With ESR as low as 0.30 ohm for capacitance values of between 22pF and 47pF at 500MHz, the NMC-L series is ideally suited to high speed, high frequency applications such as those found in Bluetooth products. Manufactured using ...
... low ESR multilayer ceramic chip capacitors to its portfolio of products. With ESR as low as 0.30 ohm for capacitance values of between 22pF and 47pF at 500MHz, the NMC-L series is ideally suited to high speed, high frequency applications such as those found in Bluetooth products. Manufactured using ...
q2c wiring solution - Crompton Instruments
... TE Connectivity and the TE connectivity (logo) are trademarks of the TE Connectivity Ltd. family of companies. Other logos, product and Company names mentioned herein may be trademarks of their respective owners. While TE has made every reasonable effort to ensure the accuracy of the information in ...
... TE Connectivity and the TE connectivity (logo) are trademarks of the TE Connectivity Ltd. family of companies. Other logos, product and Company names mentioned herein may be trademarks of their respective owners. While TE has made every reasonable effort to ensure the accuracy of the information in ...
BD433/435/437 NPN Epitaxial Silicon Transistor BD433/435/437 — NPN Epit Features
... are intended for surgical implant into the body or (b) support or system whose failure to perform can be reasonably expected to sustain life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions f ...
... are intended for surgical implant into the body or (b) support or system whose failure to perform can be reasonably expected to sustain life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions f ...
Dynamic Wireless Power Transfer System for
... simplified. The estimation equation is based on the equivalent circuit of a WPT system and expressed as a function of vehicle-side voltage and current. The reference value and the equilibrium point of the DC-DC converter can be obtained by the estimated road-side voltage. Therefore, the power contro ...
... simplified. The estimation equation is based on the equivalent circuit of a WPT system and expressed as a function of vehicle-side voltage and current. The reference value and the equilibrium point of the DC-DC converter can be obtained by the estimated road-side voltage. Therefore, the power contro ...
74F189 64-Bit Random Access Memory with 3
... are 3-STATE and are in the high impedance state whenever the Chip Select (CS) input is HIGH. The outputs are active only in the Read mode and the output data is the complement of the stored data. ...
... are 3-STATE and are in the high impedance state whenever the Chip Select (CS) input is HIGH. The outputs are active only in the Read mode and the output data is the complement of the stored data. ...
96KB - NZQA
... inductor supplied via resistance from constant voltage; current and voltage at any instant of time; time constant determined by graphical means. ...
... inductor supplied via resistance from constant voltage; current and voltage at any instant of time; time constant determined by graphical means. ...
Instruction Manual for MAS830LH MAS830H Series Digital Multimeter
... Insert the black probe into the COM socket and the red one into the V.Ω.mA, then the red probe will be of positive polarity. Turn the switch to the range, and connect the red probe to the positive pole of the diode being measured and the black one to the negative pole, read the approximate forward v ...
... Insert the black probe into the COM socket and the red one into the V.Ω.mA, then the red probe will be of positive polarity. Turn the switch to the range, and connect the red probe to the positive pole of the diode being measured and the black one to the negative pole, read the approximate forward v ...
Development of Sensor Board for 802.11 DPAC
... +12V charge controller. It derives its 5V and 3.3V supplies using onboard regulators The 5 V power supply is based on an LM2673S-5.0 switching regulator. The 3.3 V power supply is derived from the 5 V supply using a Series LDO (LP3962ES-3.3) regulator. These two power supplies are used for D ...
... +12V charge controller. It derives its 5V and 3.3V supplies using onboard regulators The 5 V power supply is based on an LM2673S-5.0 switching regulator. The 3.3 V power supply is derived from the 5 V supply using a Series LDO (LP3962ES-3.3) regulator. These two power supplies are used for D ...
DATA SHEET PBSS5240T 40 V, 2 A
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
LCM-40(DA), LCM-60(DA) installation manual
... Use suitable mounting tools to do the wiring and mounting (see 5) Use a MCB (miniature circuit breaker) with an adequate current rating to protect the lighting system (see 6) ...
... Use suitable mounting tools to do the wiring and mounting (see 5) Use a MCB (miniature circuit breaker) with an adequate current rating to protect the lighting system (see 6) ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.