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(szvdom | horvath | ) Budapest University of Technology and Economics
(szvdom | horvath | ) Budapest University of Technology and Economics

... process is also the task of the microcontroller. A fully discharged Ni-MH cell’s output voltage is typically around 1.5V, when a 500mA current is flowing into it (under charging). During the charging cycle, the cell’s voltage slowly increases, and when approaching the fully charged state voltage inc ...
AD8200 数据手册DataSheet 下载
AD8200 数据手册DataSheet 下载

... the imbalance in source resistances at the input to the buffer. In many cases this can be ignored, but if desired, can be nulled by inserting a resistor equal to 100 kΩ minus the parallel sum of REXT and 100 kΩ, in series with Pin 4. For example, with REXT = 100 kΩ (yielding a composite gain of ⫻10) ...
Install Guide
Install Guide

... inputs with the addition of three 32-input interface boards. The programmable switch inputs can accept maintained contacts or momentary contacts up to 24 VDC. This requires sinking capability to pull the input below 1 VDC to counteract the pull up of 1 mADC. Typically, dry contacts (0 V) are used to ...
2.4-GHz Band Ultra-Low-Voltage LC-VCO IC in 130-nm CMOS Xin Yang Kangyang Xu
2.4-GHz Band Ultra-Low-Voltage LC-VCO IC in 130-nm CMOS Xin Yang Kangyang Xu

... increases. In microwave analog circuits design, high ...
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... Recommended Component Values The MAX4173 senses a wide variety of currents with different sense resistor values. Table 1 lists common resistor values for typical operation of the MAX4173. Choosing RSENSE To measure lower currents more accurately, use a high value for RSENSE . The high value develops ...
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LS4148/LS4448

introduction to spice source files
introduction to spice source files

KGA – AC Interference
KGA – AC Interference

... AC – Three Phase, each conductor has the same amount of current and are 120 degrees out of phase ...
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P.I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, and J.C. Sturm, "Thin-Film Transistor Circuits on Large-Area Spherical Surfaces," Appl. Phys. Lett. 81, pp. 1723-1725 (2002).
P.I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, and J.C. Sturm, "Thin-Film Transistor Circuits on Large-Area Spherical Surfaces," Appl. Phys. Lett. 81, pp. 1723-1725 (2002).

... transistors on different islands were connected through this process to form an inverter circuit. The characteristics of an inverter made on a spherical dome are shown in Fig. 4. The transfer curve of the inverter begins to switch at input voltage of ⬃2 V, corresponding to the threshold voltage of t ...
IOSR Journal of Computer Engineering (IOSR-JCE)
IOSR Journal of Computer Engineering (IOSR-JCE)

Organic Electrochemical Transistors for Fast Scan Cyclic Voltammetry Suresh Babu Kollipara
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... discovery of conducting polymers and many different organic electronic devices have been designed and fabricated. The performance of organic conducting materials has benefited greatly from the optimization of chemical, optical and electrical properties of these materials. A lot of effort has gone in ...
Q1. A battery of negligible internal resistance is connected to lamp P
Q1. A battery of negligible internal resistance is connected to lamp P

... State and explain the effect on the brightness of the lamps in the circuit shown in Figure 1 if the battery has a significant internal resistance. ...
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Ohm`s law - Wikipedia, the free encyclopedia
Ohm`s law - Wikipedia, the free encyclopedia

... and how Ohm's Law is used Electrical circuits consist of electrical devices connected by wires (or other suitable conductors). (See the article electrical circuits for some basic combinations.) The above diagram shows one of the simplest electrical circuits that can be constructed. One electrical de ...
Lesson 1452, Optoelectronics - Cleveland Institute of Electronics
Lesson 1452, Optoelectronics - Cleveland Institute of Electronics

Thin-film transistor circuits on large-area spherical surfaces J. C. Sturm
Thin-film transistor circuits on large-area spherical surfaces J. C. Sturm

... transistors on different islands were connected through this process to form an inverter circuit. The characteristics of an inverter made on a spherical dome are shown in Fig. 4. The transfer curve of the inverter begins to switch at input voltage of ⬃2 V, corresponding to the threshold voltage of t ...
Q1. The graph below shows how a sinusoidal alternating voltage
Q1. The graph below shows how a sinusoidal alternating voltage

... The voltage output and frequency of the signal are now changed so that the peak voltage is 80 V and the frequency is 200 Hz. State which two controls on the oscilloscope have to be altered so that four full cycles again appear on the screen but the peak to peak distance occupies the full screen. Det ...
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Direct current voltage increment due to ac coupling in a high Tc
Direct current voltage increment due to ac coupling in a high Tc

... ~dotted line in Fig. 1! one can deduce that ^ DR & depends strongly on I dc ; it vanishes below I dc515 A and increases from approximately 0.04 mV at 16 A to 0.16 mV at 22 A. The parabolic dependence of DV dc on I ac ~Fig. 2! can be interpreted as resulting from the parabolic dependence of the ac ma ...
Lab 1 - Seattle Central College
Lab 1 - Seattle Central College

CIRCUIT FUNCTION AND BENEFITS
CIRCUIT FUNCTION AND BENEFITS

... use the "Circuits from the Lab" in the design of your product, no other license is granted by implication or otherwise under any patents or other intellectual property by application or use of the "Circuits from the Lab". Information furnished by Analog Devices is believed to be accurate and reliabl ...
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Amplifier Circuits Quiz - e-VET

AN1115 Single Stage Primary Side Regulation PFC Controller For
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SPEED REGULATOR FOR DC MOTORS
SPEED REGULATOR FOR DC MOTORS

... (*) An internal protection circuit reduces the current if the temperature of the junction increase: I(8) = 0.75A at Tj = +140 °C ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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