UM1078
... Compatibility with other power switches in DPAK packages (the STD5N52U, STGD6NC60HD, for example) ...
... Compatibility with other power switches in DPAK packages (the STD5N52U, STGD6NC60HD, for example) ...
MOC256M AC Input Phototransistor Small Outline Surface Mount Optocouplers
... The MOC256M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector. It is designed for applications requiring the detection or monitoring of AC signals. The device is constructed with a ...
... The MOC256M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector. It is designed for applications requiring the detection or monitoring of AC signals. The device is constructed with a ...
Resistor-Capacitor (RC) Circuits
... but do not attach them to the power supply. Make sure that both voltage probes are detected by Logger Pro; you will only see one graph, as before, but along the y-axis, you should see headers that say "Potential 1" & "Potential 2". • Set the data collection time to 60 seconds at a rate of 10 samples ...
... but do not attach them to the power supply. Make sure that both voltage probes are detected by Logger Pro; you will only see one graph, as before, but along the y-axis, you should see headers that say "Potential 1" & "Potential 2". • Set the data collection time to 60 seconds at a rate of 10 samples ...
ZRB500
... The ZRB500 design provides a stable voltage without an external capacitor and is stable with capacitive loads. The ZRB500 is recommended for operation between 50µA and 15mA and so is ideally suited to low power and battery powered applications. ...
... The ZRB500 design provides a stable voltage without an external capacitor and is stable with capacitive loads. The ZRB500 is recommended for operation between 50µA and 15mA and so is ideally suited to low power and battery powered applications. ...
... potentials around the circuit. If there are "N" nodes in the circuit there will be "N-1" independent nodal equations and these alone are sufficient to describe and hence solve the circuit. At each node point write down Kirchoff's first law equation, that is: "the currents entering a node are exactly ...
Diode Biasing.pdf
... at each iteration, and if you're looking for headroom pick the one that places Vp at B+/2 (or just pick the one you think sounds best). try swapping a few different tubes in the socket, and see how much the plate voltage changes. you may need to pick a middle of the road value to compensate for tube ...
... at each iteration, and if you're looking for headroom pick the one that places Vp at B+/2 (or just pick the one you think sounds best). try swapping a few different tubes in the socket, and see how much the plate voltage changes. you may need to pick a middle of the road value to compensate for tube ...
2-Channel ESD Solution for High-Speed
... 9 Power Supply Recommendations The TPD2E009 device is a passive ESD-protection device, and therefore, does not require a power supply. Care must be taken to avoid violating the maximum-voltage specification to ensure that the device functions properly. The D+ and D– lines share a TVS diode that can ...
... 9 Power Supply Recommendations The TPD2E009 device is a passive ESD-protection device, and therefore, does not require a power supply. Care must be taken to avoid violating the maximum-voltage specification to ensure that the device functions properly. The D+ and D– lines share a TVS diode that can ...
Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage
... (8 ppm/°C, max) and initial accuracy (0.05%) on both the VREF and VBIAS outputs while operating at a quiescent current less than 430 µA. In addition, the VREF and VBIAS outputs track each other with a precision of 6 ppm/°C (max) across the temperature range of –40°C to 85°C. All these features incre ...
... (8 ppm/°C, max) and initial accuracy (0.05%) on both the VREF and VBIAS outputs while operating at a quiescent current less than 430 µA. In addition, the VREF and VBIAS outputs track each other with a precision of 6 ppm/°C (max) across the temperature range of –40°C to 85°C. All these features incre ...
MAX256 3W Primary-Side Transformer H-Bridge Driver for Isolated Supplies General Description
... the output of the MAX256 to +5V. The Halo TGMH281NF provides a center-tapped 1:2.6 turns ratio, and the secondary circuit implements a 4-diode bridge rectifier (Figure 1C). For a minimum input voltage of +3.0V, the output voltage of the bridge rectifier is approximately +5.5V at a current of 200mA. ...
... the output of the MAX256 to +5V. The Halo TGMH281NF provides a center-tapped 1:2.6 turns ratio, and the secondary circuit implements a 4-diode bridge rectifier (Figure 1C). For a minimum input voltage of +3.0V, the output voltage of the bridge rectifier is approximately +5.5V at a current of 200mA. ...
Built-In Proactive Tuning System for Circuit Aging Resilience
... (Negative Bias Temperature Instability) and HCI (Hot Carrier Injection) [10] become prominent. NBTI manifests itself by degradation of PMOS threshold voltage [6, 10] whereas HCI results in threshold voltage increase in mostly NMOS transistors. When technology scales from 180nm to 65nm, the MTTF (Mea ...
... (Negative Bias Temperature Instability) and HCI (Hot Carrier Injection) [10] become prominent. NBTI manifests itself by degradation of PMOS threshold voltage [6, 10] whereas HCI results in threshold voltage increase in mostly NMOS transistors. When technology scales from 180nm to 65nm, the MTTF (Mea ...
BD95831MUV
... BD95831MUV ●Description BD95831MUV is a 1ch synchronous buck converter that can generate output voltage (0.8V to 5.5V) at the input voltage range (7.5V to 15V). Space-saving and high efficient switching regulator can be achieved due to built-in N-MOSFET power transistors. The IC also ...
... BD95831MUV ●Description BD95831MUV is a 1ch synchronous buck converter that can generate output voltage (0.8V to 5.5V) at the input voltage range (7.5V to 15V). Space-saving and high efficient switching regulator can be achieved due to built-in N-MOSFET power transistors. The IC also ...
FJN3305R NPN Epitaxial Silicon Transistor — NPN Epit axial
... system whose failure to perform can be reasonably expected to intended for surgical implant into the body or (b) support or sustain cause the failure of the life support device or system, or to affect its life, and (c) whose failure to perform when properly used in safety or effectiveness. accordanc ...
... system whose failure to perform can be reasonably expected to intended for surgical implant into the body or (b) support or sustain cause the failure of the life support device or system, or to affect its life, and (c) whose failure to perform when properly used in safety or effectiveness. accordanc ...
TLP7920(F) - Toshiba America Electronic Components
... • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid sit ...
... • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid sit ...
RAD-TOLERANT CLASS V, WIDEBAND OPERATIONAL AMPLIFIER THS4304-SP FEATURES DESCRIPTION/ORDERING INFORMATION
... Input Bias Current Drift Input Offset Current Input Offset Current Drift ...
... Input Bias Current Drift Input Offset Current Input Offset Current Drift ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.