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Control and Optimization of the Corona Effects and Breakdown of
Control and Optimization of the Corona Effects and Breakdown of

Dual-Channel Digital Isolator ADuM1210  FEATURES
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... The ADuM1210 1 is a dual-channel, digital isolator based on Analog Devices, Inc. iCoupler® technology. Combining high speed CMOS and monolithic transformer technology, this isolation component provides outstanding performance characteristics superior to alternatives such as optocoupler devices. By a ...
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DRV103: PMW Low-Side Driver for Solenoids, Coils, Valves

... set a longer delay time. A resistor, analog voltage, or a voltage from a D/A converter can be used to control the duty cycle of the PWM output. The D/A converter must be able to sink a current 2.75 • IREF (IREF = 1.3V/RFREQ). Figure 2 illustrates a typical timing diagram with the Delay Adjust pin co ...
Parameter extraction methodology for the mextram bipolar
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... The substrate voltage is normally set to ,1 Volt with respect to the common in the di erent measurement setups.  The maximum collector voltage Vcbmax is obtained from the Early forward measurement and is the voltage where the base current becomes negative. This collector voltage is about the BVCEO ...
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A Power Efficient 2:1 Multiplexer Design for Low Power VLSI

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Comparison of PI and ANN Control Techniques for Nine

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... The regulator enters the pulse-skip mode when the output current is lower than the LinSkip current threshold of 7 mA. In the pulse-skip mode, the error amplifier disables switching of the power stages when it detects an output voltage higher than 3.3 V. The controller skips switching cycles until th ...
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Active inductor-based tunable impedance matching network for RF

... circuit including the finite DC-feed inductance (Ldc), shunt capacitance (Cp), input and output matching networks (L2–C2–Lg and LP–CS), and a series resonance network (L1–C1) tuned at the fundamental harmonic of input signal, leading that only a sinusoidal signal will be passed to the load. The induc ...
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... Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy ...
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... Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to a ...
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... more power than the boost converter consumes from the cell. This can be guaranteed as long as the capacitor across the TEG is large enough to boost CHG above the BATT pin. Note that it is important to use a high-speed Schottky diode between LX and CHG to guarantee LX does not exceed its absolute max ...
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... is used to increase the magnitude of either the current or the voltage. An amplifier usually works over a restricted range and can either be inverting or non-inverting. An amplifier usually works over a restricted range. The circuit is provided with an external supply of emf. The fraction of this ex ...
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... Briefly press the button to freeze the display. Press again to unfreeze the display. Press and hold the button over 2 seconds to illuminate the backlight. Press the button and hold the button again to extinguish the backlight. • POWER: Instrument power, on or off. • RS232: This button enables data l ...
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... Multilevel and multiphase converters and drives are a subject of increasing interest in the last years due to some advantages compared with conventional three-phase systems. Cascaded (dual) two-level converters which utilize two standard three-phase voltage source inverters are now perspective topol ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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