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SN74LVC1G126-EP (Rev. A)
SN74LVC1G126-EP (Rev. A)

... temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this ...
Techo notes – Capacitors – fixed value
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... circuits where the polarity of any DC voltage present may be likely to change or there are only AC signals present, for example in cross over networks in speaker enclosures. Oil filled Capacitors: are often used in high-voltage electronic equipment. An oil-filled capacitor is nothing more than a pap ...
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... (HS-FET) turns on whenever the ramp voltage (VRamp) is lower than the error amplifier output voltage (VEAO), which indicates an insufficient output voltage. The on period is determined by both the output voltage and input voltage to make the switching frequency fairly constant over the input voltage ...
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Noise Source Impedance Measurement in SMPS

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... *AC Parameters are guaranteed by DC correlated testing. Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of ‘‘Recommended Operating Conditions’ ...
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... additional power conservation, the MAX9911/MAX9913 feature a low-power shutdown mode that reduces supply current to 1nA, and puts the amplifiers’ outputs in a high-impedance state. These devices are unity-gain stable with a 200kHz GBW product. The MAX9910 is available in a 5-pin SC70 package. The MA ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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