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chapter 14
chapter 14

... If the source has a non-zero series impedance, loading (reduction in voltage) will occur when the load is connected directly to the source. On the other hand, the input impedance of the voltage follower is very high (ideally infinite) and loading does not occur. If the source impedance is very high ...
Series 9180/ 9270 Power Amplifier
Series 9180/ 9270 Power Amplifier

... unlike conventional bipolar transistors, have a negativetemperature coefficient, which means that they do not exhibit “thermal runaway”. Thermal runaway is a phenomenon whereby a transistor heats up as it conducts more current, which causes it to get hotter, and conduct more current, and so on, unti ...
AP2141D/ AP2151D Description Pin Assignments
AP2141D/ AP2151D Description Pin Assignments

... Thermal protection prevents the IC from damage when the die temperature exceeds safe margins. This mainly occurs when heavy-overload or shortcircuit faults are present for extended periods of time. The AP2141D/AP2151D implements thermal sensing to monitor the operating junction temperature of the po ...
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MAX4780/MAX4784 0.7 Multiplexers Ω

... When powered from a +2.7V supply, the MAX4780/ MAX4784 feature low 0.7Ω on-resistance (RON), and 0.1Ω R ON flatness. The digital logic input is +1.8V CMOS-logic compatible when using a single +3V supply. The MAX4780/MAX4784 are available in 16-pin TSSOP and 3mm x 3mm thin QFN packages. ...
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... Each linear regulator provides up to 100mA output current with automatic linear regulator bootstrapping to the main SMPS outputs. The MAX1777/MAX1977/MAX1999 include on-board power-up sequencing, a power-good (PGOOD) output, digital soft-start, and internal soft-stop output discharge that prevents n ...
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MAX17410 Dual-Phase, Quick-PWM Controller for IMVP6+ CPU Core Power Supplies General Description

... notebook IMVP6+ CPUs. True out-of-phase operation reduces input ripple current requirements and output voltage ripple while easing component selection and layout difficulties. The Quick-PWM control scheme provides instantaneous response to fast load current steps. Active voltage positioning reduces ...
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lab 13 - building an ammeter and voltmeter

... indicating the direction. Basically, there is just a coil of wire connected between the two ports on the galvanometer. The coil is in a magnetic field, so it will tilt when there is a current through it, or thus a voltage across it. ...
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... voltage margin in the devices and power circuit topology. TMEIC has used the highest motor voltage possible consistent with adequate device voltage margin. c. The TMdrive-XL55, XL75, and XL85 drives have 36-pulse diode rectifier source converters. The likelihood of beat frequencies and inter-harmoni ...
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TL1431 Precision Programmable Reference

... Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to a ...
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MAX15021 Dual, 4A/2A, 4MHz, Step-Down DC-DC Regulator with Tracking/Sequencing Capability General Description
MAX15021 Dual, 4A/2A, 4MHz, Step-Down DC-DC Regulator with Tracking/Sequencing Capability General Description

... Note 1: LX_ has internal diodes to PGND_ and PVIN_. Applications that forward bias these diodes should take care not to exceed the IC’s package power dissipation. Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. Fo ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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