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MAX703/MAX704 Low-Cost Microprocessor Supervisory Circuits with Battery Backup General Description
MAX703/MAX704 Low-Cost Microprocessor Supervisory Circuits with Battery Backup General Description

... Lithium batteries work well as backup batteries because they have very low self-discharge rates and high-energy density. Single lithium batteries with opencircuit voltages of 3.0V to 3.6V are ideal for use with the MAX703/MAX704. Batteries with an open-circuit voltage less than the minimum reset thr ...
Aalborg Universitet DC Networks
Aalborg Universitet DC Networks

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ADM709 数据手册DataSheet 下载

... permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods of time may affect devic ...
Everything You Need to Know About CY7B991/2  Introduction
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Battery Energy Storage System Client Remote

... The first step to start up a lineup is to meet all the required permissive conditions for that lineup. Once this is done, a lineup ready feedback will become true. When the lineup ready feedback is true, it is expected that the client will provide a latched enable command. When this command is recei ...
100% stator ground fault protection
100% stator ground fault protection

TLC1514 数据资料 dataSheet 下载
TLC1514 数据资料 dataSheet 下载

... digital inputs and a 3-state output [chip select (CS), serial input-output clock (SCLK), serial data input (SDI), and serial data output (SDO)] that provide a direct 4-wire interface to the serial port of most popular host microprocessors (SPI interface). When interfaced with a DSP, a frame sync (FS ...
eTEC Series HV14,18,F0,0102,GG
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... converts it to usable output DC power. Due to its size, output power generation and heat conversion to power ratio this device is suitable for use in applications to power wireless sensors and wireless sensor networks. One eTEG PG24 can produce 90 milliWatts of output power and 1.7 volts in an open ...
AN3137 - STMicroelectronics
AN3137 - STMicroelectronics

Busbar Design: How to Spare Nanohenries ? JM.Guichon , J.Aimé , JL.Schanen
Busbar Design: How to Spare Nanohenries ? JM.Guichon , J.Aimé , JL.Schanen

... measuring across V2. This is illustrated in Fig. 9. The current source is a rising current, and voltage drop measurement allows the determination of the element of the impedance matrix. Table 4 shows the impedance matrix of the electrical engineers busbar, EEBB (Fig. 8). To be noticed that all terms ...
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SLB 9670 VQ1.2 FW6.40 Data Sheet
SLB 9670 VQ1.2 FW6.40 Data Sheet

... Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to ...
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Lessons in AC Circuits

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... In a synthesizer low N-divider ratios are important, as high division ratios would amplify in-band phase noise. The design methods deployed as part of this research achieve low division ratios (4 ≤ N ≤ 33) and a high phase comparison frequency (>100 MHz). The synthesizer IC employs a first-order fra ...
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... Figure 2.2 illustrates the connections between the LPT-11 transceiver and its four power supply-related components on one layer of a two-layer PC board. The other layer (generally the solder side of the board) should contain as much ground plane as possible. The switching power supply circuit in th ...
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... Lightning Strikes - Large scale impact, high current and voltage, but least common occurrence. ...
FAN5365 1A / 0.8A, 6MHz Digitally Programmable Regulator  
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... minimize input current and output overshoot at the end of soft-start. The IC maintains a consistent soft-start ramp, regardless of output load during startup. The FAN5365 is available in a 1.27 x 1.29mm, 9-bump ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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