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... Abstract—A high-driving class-AB buffer amplifier, which consists of a high-gain input stage and a pair of operational transconductance amplifier, is proposed. This paper presents a novel systematic offset minimization The high-driving capability is mainly provided by the folded amplifier class-AB C ...
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... • capacitive current, which flows only at the step onset and offset • resistive current (through leak channels), also given by Ohm’s law (I = V/R) • Under current clamp, the passive response to current injection is a function of the RC characteristics of the membrane • V = IR (Ohm’s law) gives the s ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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