Self-Folding Miniature Elastic Electric Devices
... layer produced by heat. MPF maintains conductivity as well as resistivity given the non-harsh iterative foldings. The sheet can withstand a temperature range of −45◦ C to 148◦ C, making the material a poor candidate for soldered connections. Therefore, conductive connections in the circuit were made ...
... layer produced by heat. MPF maintains conductivity as well as resistivity given the non-harsh iterative foldings. The sheet can withstand a temperature range of −45◦ C to 148◦ C, making the material a poor candidate for soldered connections. Therefore, conductive connections in the circuit were made ...
TS3V330 数据资料 dataSheet 下载
... All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C. For I/O ports, IOZ includes the input leakage current. The IOS test is applicable to only one ON channel at a time. The duration of this test is less than one second. Measured by the voltage drop between the D and S terminals a ...
... All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C. For I/O ports, IOZ includes the input leakage current. The IOS test is applicable to only one ON channel at a time. The duration of this test is less than one second. Measured by the voltage drop between the D and S terminals a ...
8.2 Offsite Power System 8.2.1 Description
... The offsite power system provides power from the transmission system, via the station switchyard, to the plant Class 1E and non-Class 1E electrical distribution system. The offsite power system includes all transmission lines connected to the switchyard, the switchyard equipment (overhead buses, cir ...
... The offsite power system provides power from the transmission system, via the station switchyard, to the plant Class 1E and non-Class 1E electrical distribution system. The offsite power system includes all transmission lines connected to the switchyard, the switchyard equipment (overhead buses, cir ...
BZT52B15LP Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
ZLLS2000 Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
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... easy to realize in practice and can be tuned over a relatively large capacitive range. The variable-length adjustment is usually achieved by using a threaded post to enter the waveguide through a threaded hole (often with a lock-nut to Keywords: Waveguides, waveguide discontinuities, impedance match ...
... easy to realize in practice and can be tuned over a relatively large capacitive range. The variable-length adjustment is usually achieved by using a threaded post to enter the waveguide through a threaded hole (often with a lock-nut to Keywords: Waveguides, waveguide discontinuities, impedance match ...
SP3232EU 数据资料DataSheet下载
... 0.1µF capacitors in 3.3V operation. This charge pump allows the SP3222EU and the 3232EU to deliver true RS-232 performance from a single power supply ranging from +3.0V to +5.5V. The ESD tolerance of the SP3222EU/3232EU devices are over ±15kV for both Human Body Model and IEC1000-4-2 Air discharge t ...
... 0.1µF capacitors in 3.3V operation. This charge pump allows the SP3222EU and the 3232EU to deliver true RS-232 performance from a single power supply ranging from +3.0V to +5.5V. The ESD tolerance of the SP3222EU/3232EU devices are over ±15kV for both Human Body Model and IEC1000-4-2 Air discharge t ...
LM35 Precision Centigrade Temperature Sensors (Rev. D)
... case the V− terminal of the circuit will be grounded to that metal. Alternatively, mount the LM35 inside a sealedend metal tube, and then dip into a bath or screw into a threaded hole in a tank. As with any IC, the LM35 and accompanying wiring and circuits must be kept insulated and dry, to avoid le ...
... case the V− terminal of the circuit will be grounded to that metal. Alternatively, mount the LM35 inside a sealedend metal tube, and then dip into a bath or screw into a threaded hole in a tank. As with any IC, the LM35 and accompanying wiring and circuits must be kept insulated and dry, to avoid le ...
UM0723
... of serious personal injury and damage to property, if the kit or components are improperly used or installed incorrectly. The kit is not electrically isolated from the AC/DC input. The demonstration board is directly linked to the mains voltage. No insulation has been placed between the accessible p ...
... of serious personal injury and damage to property, if the kit or components are improperly used or installed incorrectly. The kit is not electrically isolated from the AC/DC input. The demonstration board is directly linked to the mains voltage. No insulation has been placed between the accessible p ...
LTC3619 - Linear Technology
... An important design consideration is that the RDS(ON) of the P-channel switch increases with decreasing input supply voltage (see Typical Performance Characteristics). Therefore, the user should calculate the worst-case power dissipation when the LTC3619 is used at 100% duty cycle with low input vol ...
... An important design consideration is that the RDS(ON) of the P-channel switch increases with decreasing input supply voltage (see Typical Performance Characteristics). Therefore, the user should calculate the worst-case power dissipation when the LTC3619 is used at 100% duty cycle with low input vol ...
Switching Power Supply Design_ EMI
... • VMAX is the allowed dBμV noise level for the particular EMI standard. • Method 2 – Estimation using the first harmonic of input current • Assume the input current is a square wave (small ripple approximation) ...
... • VMAX is the allowed dBμV noise level for the particular EMI standard. • Method 2 – Estimation using the first harmonic of input current • Assume the input current is a square wave (small ripple approximation) ...
3.3V-Powered, ±15kV ESD-Protected, 12Mbps and Slew-Rate-Limited True RS-485/RS-422 Transceivers MAX3483E/MAX3485E/MAX3486E/MAX3488E/MAX3490E/MAX3491E General Description
... 14-Pin Plastic DIP (derate 10mW/°C above +70°C) ......800mW Operating Temperature Ranges MAX34_ _ EC_ _ ...................................................0°C to +70°C MAX34_ _ EE_ _.................................................-40°C to +85°C Storage Temperature Range ............................ ...
... 14-Pin Plastic DIP (derate 10mW/°C above +70°C) ......800mW Operating Temperature Ranges MAX34_ _ EC_ _ ...................................................0°C to +70°C MAX34_ _ EE_ _.................................................-40°C to +85°C Storage Temperature Range ............................ ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.