AD588 数据手册DataSheet 下载
... + Input to Amplifier 3. Connect to VHIGH, Pin 6. Reference Gain Adjustment for Calibration. See the Calibration section. Unbuffered Reference High Output. Noise Filtering Pin. Connect external 1 μF capacitor to ground to reduce the output noise (see the Noise Performance and Reduction section). Can ...
... + Input to Amplifier 3. Connect to VHIGH, Pin 6. Reference Gain Adjustment for Calibration. See the Calibration section. Unbuffered Reference High Output. Noise Filtering Pin. Connect external 1 μF capacitor to ground to reduce the output noise (see the Noise Performance and Reduction section). Can ...
IQS17 / IQS117 Family IQ Switch - ProxSense™ Series
... as well as domestic appliances. The integrated design minimises external components while taking care of a number of essential and comfort features. The IC is a stand-alone device, capable of controlling a triac or transistor to power the load. The device can be powered from high voltages using mini ...
... as well as domestic appliances. The integrated design minimises external components while taking care of a number of essential and comfort features. The IC is a stand-alone device, capable of controlling a triac or transistor to power the load. The device can be powered from high voltages using mini ...
Physics 2121 Lab Manual
... 9. The slope, which is a representation of the average velocity, has been calculated as 1.02 m/s. The best-fit data for this graph using a least-squares algorithm is printed at the top of the graph. Its value for the slope is slightly less than the calculated value, but is the more accurate value. T ...
... 9. The slope, which is a representation of the average velocity, has been calculated as 1.02 m/s. The best-fit data for this graph using a least-squares algorithm is printed at the top of the graph. Its value for the slope is slightly less than the calculated value, but is the more accurate value. T ...
BAT54S Datasheet
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
HDE Short Form Product Catalog
... mobile demonstrators allow live testing and demonstrations to groups and take only minutes to setup. All of our mobile demonstrators are ideal venues for product training sessions, tool shows and rodeos. • Display and demonstrate all the latest HD Electric products ...
... mobile demonstrators allow live testing and demonstrations to groups and take only minutes to setup. All of our mobile demonstrators are ideal venues for product training sessions, tool shows and rodeos. • Display and demonstrate all the latest HD Electric products ...
UniGear 500R 17.5 kV, arc-proof, air insulated
... replaced, this can be carried out by trained technician in less than 90 minutes without the need of special tools. In this case a readily- available manual earthing device must be used in order to guarantee the earthing connection on cables. UniGear 500R in IEC version has the same overall dimension ...
... replaced, this can be carried out by trained technician in less than 90 minutes without the need of special tools. In this case a readily- available manual earthing device must be used in order to guarantee the earthing connection on cables. UniGear 500R in IEC version has the same overall dimension ...
OPA336 OPA2336 OPA4336 SINGLE-SUPPLY,
... Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only. Functional operation of the device at these conditions, or beyond the specified operating conditions, is not implied. (2) Input terminals are diode-clamped to the power supply ...
... Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only. Functional operation of the device at these conditions, or beyond the specified operating conditions, is not implied. (2) Input terminals are diode-clamped to the power supply ...
Catalogue BIORiphaso MV
... ICAR available capacitor range which can be equipped with internal fuses is shown in Table 2 (blue zone). It is clear that small power capacitors and those of high voltage are excluded. The reason of this choice are strictly related to the criterion of good design of these type of capacitors and the ...
... ICAR available capacitor range which can be equipped with internal fuses is shown in Table 2 (blue zone). It is clear that small power capacitors and those of high voltage are excluded. The reason of this choice are strictly related to the criterion of good design of these type of capacitors and the ...
minimum correct thermo-electric model for transient behaviour of
... of that heat is lost by convection to the gas inserted in the bulb to slow down evaporation of the filament. Depending on the needed accuracy, heat transfer by lead in wires can be described by lumped element model or distributed element model. For transient analysis, the lumped element model of hea ...
... of that heat is lost by convection to the gas inserted in the bulb to slow down evaporation of the filament. Depending on the needed accuracy, heat transfer by lead in wires can be described by lumped element model or distributed element model. For transient analysis, the lumped element model of hea ...
PDF: 1.73MB
... 1.1 Features of Mini DIPIPM with BSD Mini DIPIPM with BSD is an ultra-small compact intelligent power module with transfer mold package favorable for larger mass production. Power chips, drive and protection circuits are integrated in the module, which make it easy for AC100-240V class low power mot ...
... 1.1 Features of Mini DIPIPM with BSD Mini DIPIPM with BSD is an ultra-small compact intelligent power module with transfer mold package favorable for larger mass production. Power chips, drive and protection circuits are integrated in the module, which make it easy for AC100-240V class low power mot ...
OPA2822 Dual, Wideband, Low-Noise Operational Amplifier FEATURES
... Differential Input Voltage .................................................................. ±1.2V Input Voltage Range ............................................................................ ±VS Storage Temperature Range ......................................... –65°C to +125°C Lead Temperatur ...
... Differential Input Voltage .................................................................. ±1.2V Input Voltage Range ............................................................................ ±VS Storage Temperature Range ......................................... –65°C to +125°C Lead Temperatur ...
Manual for AM/FM Radio Kit
... The purpose of Section 1, the Audio Amplifier Stage, is to increase the power of the audio signal received from either detector to a power level capable of driving the speaker. Section 2 includes the AM detector circuit and the AGC (automatic gain control) stage. The AM detector converts the amplitu ...
... The purpose of Section 1, the Audio Amplifier Stage, is to increase the power of the audio signal received from either detector to a power level capable of driving the speaker. Section 2 includes the AM detector circuit and the AGC (automatic gain control) stage. The AM detector converts the amplitu ...
74VCX245 Low Voltage Bidirectional Transceiver with 3.6V Tolerant Inputs and Outputs 7
... The VCX245 contains eight non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus oriented applications. The T/R input determines the direction of data flow. The OE input disables both the A and B ports by placing them in a high impedance state. ...
... The VCX245 contains eight non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus oriented applications. The T/R input determines the direction of data flow. The OE input disables both the A and B ports by placing them in a high impedance state. ...
Supplementary Information for
... where τ is the time for Vn to change from 10 % to 90 % of V0. For the calculation of the diameterdependent bandwidth (Fig. 2f), the SiO2 thickness was fixed at the nanotube inner diameter, and the nanotube length was a constant 1.5 m. The high bandwidth determined for the BIT-FET devices results in ...
... where τ is the time for Vn to change from 10 % to 90 % of V0. For the calculation of the diameterdependent bandwidth (Fig. 2f), the SiO2 thickness was fixed at the nanotube inner diameter, and the nanotube length was a constant 1.5 m. The high bandwidth determined for the BIT-FET devices results in ...
PAM8803
... frequencies without severe attenu ation. But in many cases the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to 150Hz. Thus, using a large input capacitor may not increase actual system performance. In this case, input capacitor ...
... frequencies without severe attenu ation. But in many cases the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to 150Hz. Thus, using a large input capacitor may not increase actual system performance. In this case, input capacitor ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.