AD5116 Data Sheet Single-Channel, 64-Position, Push Button, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer
... Push-Down Pin. Connect to the external push button. Active high. An internal 100 kΩ pull-down resistor is connected to GND. Push-Up Pin. Connect to the external push button. Active high. An internal 100 kΩ pull-down resistor is connected to GND. Automatic Save Enable. Automatic save enable is config ...
... Push-Down Pin. Connect to the external push button. Active high. An internal 100 kΩ pull-down resistor is connected to GND. Push-Up Pin. Connect to the external push button. Active high. An internal 100 kΩ pull-down resistor is connected to GND. Automatic Save Enable. Automatic save enable is config ...
DS2786B Stand-Alone OCV-Based Fuel Gauge General Description Features
... Additionally, the Temperature Register reports temperature with 0.125°C resolution and ±3°C accuracy from the on-chip sensor. The on-chip temperature measurement is optional and replaces auxiliary voltage channel AIN1. Figure 1 is the 2-wire bus timing diagram; Figure 2 is the DS2786B block diagram. ...
... Additionally, the Temperature Register reports temperature with 0.125°C resolution and ±3°C accuracy from the on-chip sensor. The on-chip temperature measurement is optional and replaces auxiliary voltage channel AIN1. Figure 1 is the 2-wire bus timing diagram; Figure 2 is the DS2786B block diagram. ...
74VCX162373 Low Voltage 16-Bit Transparent Latch with 3.6V Tolerant Inputs and Outputs
... appear to be transparent to the data when the Latch enable (LE) is HIGH. When LE is LOW, the data that meets the setup time is latched. Data appears on the bus when the Output Enable (OE) is LOW. When OE is HIGH, the outputs are in a high impedance state. The VCX162373 is also designed with 26: resi ...
... appear to be transparent to the data when the Latch enable (LE) is HIGH. When LE is LOW, the data that meets the setup time is latched. Data appears on the bus when the Output Enable (OE) is LOW. When OE is HIGH, the outputs are in a high impedance state. The VCX162373 is also designed with 26: resi ...
101101/Thomas Munther
... less exactly the same power delivered from V1 and V2, the DC supply for the OP-amp. Now let’s find out what is inside the model for OP-amp. Click inside the OP-amp. It changes colour and then use the right mouse button and choose: Edit Pspice Model See in Figure 25 what is displayed ! ...
... less exactly the same power delivered from V1 and V2, the DC supply for the OP-amp. Now let’s find out what is inside the model for OP-amp. Click inside the OP-amp. It changes colour and then use the right mouse button and choose: Edit Pspice Model See in Figure 25 what is displayed ! ...
MAX1692 Low-Noise, 5.5V-Input, PWM Step-Down Regulator General Description
... switching-noise harmonics do not interfere with sensitive IF and data-sampling frequencies. A minimum load is not required during forced PWM operation, since the synchronous rectifier passes reverse-inductor current as needed to allow constant-frequency operation with no load. Forced PWM operation u ...
... switching-noise harmonics do not interfere with sensitive IF and data-sampling frequencies. A minimum load is not required during forced PWM operation, since the synchronous rectifier passes reverse-inductor current as needed to allow constant-frequency operation with no load. Forced PWM operation u ...
DAC7811 数据资料 dataSheet 下载
... The DAC7811 has a 3-wire serial interface (SYNC, SCLK, and SDIN), which is compatible with SPI, QSPI, and MICROWIRE interface standards as well as most Digital Signal Processor (DSP) devices. See the Serial Write Operation timing diagram (Figure 28) for an example of a typical write sequence. The wr ...
... The DAC7811 has a 3-wire serial interface (SYNC, SCLK, and SDIN), which is compatible with SPI, QSPI, and MICROWIRE interface standards as well as most Digital Signal Processor (DSP) devices. See the Serial Write Operation timing diagram (Figure 28) for an example of a typical write sequence. The wr ...
Microfluidic Fiber Lasers
... device (G: Gate, D: Drain, S: Source) (A Bottom) Whole structure (A Top) Magnification of the device. The gate electrode is engineered to be the As40Se52Te8 solid-core of the fiber. Two parallel source and drain electrodes are in contact with a semiconducting As40Se52Te8 film, surrounding the gate b ...
... device (G: Gate, D: Drain, S: Source) (A Bottom) Whole structure (A Top) Magnification of the device. The gate electrode is engineered to be the As40Se52Te8 solid-core of the fiber. Two parallel source and drain electrodes are in contact with a semiconducting As40Se52Te8 film, surrounding the gate b ...
A New Topology for Multilevel Current Source Converters Ebrahim Babaei Seyed Hossein Hosseini
... usually the most useful configuration for a high power converter, as reducing conduction losses in both converter and machines will always favor increasing the voltage rating rather than the current rating of the converter. Also as power levels increase, the input and output voltage levels presented ...
... usually the most useful configuration for a high power converter, as reducing conduction losses in both converter and machines will always favor increasing the voltage rating rather than the current rating of the converter. Also as power levels increase, the input and output voltage levels presented ...
Double Tail Comparator Using FinFET
... modified for low-power and fast operation even in small supply voltages using FinFET .By replacing MOSFET with FinFET the power dissipation in the dynamic comparator can be reduced. Scalablity of the device occur by occupying less space . FinFET logic circuits have significantly improved voltage sca ...
... modified for low-power and fast operation even in small supply voltages using FinFET .By replacing MOSFET with FinFET the power dissipation in the dynamic comparator can be reduced. Scalablity of the device occur by occupying less space . FinFET logic circuits have significantly improved voltage sca ...
MAX3766 622Mbps LAN/WAN Laser Driver with Automatic Power Control and Safety Shutdown
... The MAX3766 AC output drives up to 60mA of laser current. Pulse-width distortion and overshoot are lowest between 30mA and 60mA. However, output edge speed increases at lower currents. When the output current is between 2mA and 60mA, the edge speed is suitable for communications up to 622Mbps. Edge ...
... The MAX3766 AC output drives up to 60mA of laser current. Pulse-width distortion and overshoot are lowest between 30mA and 60mA. However, output edge speed increases at lower currents. When the output current is between 2mA and 60mA, the edge speed is suitable for communications up to 622Mbps. Edge ...
MADR-008851-000100 PIN Diode Driver for Series / Shunt High Power Switches Features
... 10. R2 is calculated by (VDD - ∆Vf) / Ishunt, where Ishunt is the desired forward bias current for the shunt diode. The power rating is calculated by Ishunt x (VDD - ∆Vf). For 28V VDD and 20 mA of Ishunt, R2 should use a 1W, 1.3k ohm resistor. 11. C8 is already built-in for M/A-COM MASW-000834-13560 ...
... 10. R2 is calculated by (VDD - ∆Vf) / Ishunt, where Ishunt is the desired forward bias current for the shunt diode. The power rating is calculated by Ishunt x (VDD - ∆Vf). For 28V VDD and 20 mA of Ishunt, R2 should use a 1W, 1.3k ohm resistor. 11. C8 is already built-in for M/A-COM MASW-000834-13560 ...
IF3415111540
... The Power quality problem, and the means of keeping it under control, is a growing concern. This is due primarily to the increase in the number and application of nonlinear power electronic equipment used in the control of power apparatus and the presence of sensitive electronic equipment. The non-l ...
... The Power quality problem, and the means of keeping it under control, is a growing concern. This is due primarily to the increase in the number and application of nonlinear power electronic equipment used in the control of power apparatus and the presence of sensitive electronic equipment. The non-l ...
MAX3384E ±15kV ESD-Protected, 3.0V to 5.5V, Low-Power, ________________General Description
... transmitter outputs and receiver inputs are protected to ±15kV using IEC 1000-4-2 Air-Gap Discharge, ±8kV using IEC 1000-4-2 Contact Discharge, and ±15kV using the Human Body Model. The transceiver has a proprietary low-dropout transmitter output stage, delivering true RS-232 performance from a +3.0 ...
... transmitter outputs and receiver inputs are protected to ±15kV using IEC 1000-4-2 Air-Gap Discharge, ±8kV using IEC 1000-4-2 Contact Discharge, and ±15kV using the Human Body Model. The transceiver has a proprietary low-dropout transmitter output stage, delivering true RS-232 performance from a +3.0 ...
Chapter 21: Resonance
... • Reactive powers dissipated by inductor and capacitor are I2X • Reactive powers are equal and opposite at resonance ...
... • Reactive powers dissipated by inductor and capacitor are I2X • Reactive powers are equal and opposite at resonance ...
THS1215 数据资料 dataSheet 下载
... The THS1215 is a CMOS, low-power, 12-bit, 15 MSPS analog-to-digital converter (ADC) that operates with a 3.3-V supply. The THS1215 gives circuit developers complete flexibility. The analog input to the THS1215 is differential with a gain of 1.0 in Mode 1 and 0.5 in Mode 2. The THS1215 provides a wid ...
... The THS1215 is a CMOS, low-power, 12-bit, 15 MSPS analog-to-digital converter (ADC) that operates with a 3.3-V supply. The THS1215 gives circuit developers complete flexibility. The analog input to the THS1215 is differential with a gain of 1.0 in Mode 1 and 0.5 in Mode 2. The THS1215 provides a wid ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.