Fundamentals of Microelectronics
... In forward bias, there are large diffusion currents of minority carriers through the junction. However, as we go deep into the P and N regions, recombination currents from the majority carriers dominate. These two currents add up to a constant value. CH2 ...
... In forward bias, there are large diffusion currents of minority carriers through the junction. However, as we go deep into the P and N regions, recombination currents from the majority carriers dominate. These two currents add up to a constant value. CH2 ...
NX3P2902B 1. General description Logic controlled high-side power switch
... The NX3P2902B is a high-side load switch which features a low ON resistance P-channel MOSFET. The MOSFET supports more than 500 mA of continuous current and an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is us ...
... The NX3P2902B is a high-side load switch which features a low ON resistance P-channel MOSFET. The MOSFET supports more than 500 mA of continuous current and an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is us ...
BQ24030 数据资料 dataSheet 下载
... over junction temperature range (0°C ≤ TJ ≤ 125°C) and the recommended supply voltage range (unless otherwise noted) ...
... over junction temperature range (0°C ≤ TJ ≤ 125°C) and the recommended supply voltage range (unless otherwise noted) ...
MAX3738 155Mbps to 4.25Gbps SFF/SFP Laser Driver with Extinction Ratio Control General Description
... The output stage is composed of a high-speed differential pair and a programmable modulation current source. The MAX3738 is optimized for driving a 15Ω load. The minimum instantaneous voltage required at OUT- is 0.7V for modulation currents up to 60mA and 0.75V for currents from 60mA to 85mA. Operat ...
... The output stage is composed of a high-speed differential pair and a programmable modulation current source. The MAX3738 is optimized for driving a 15Ω load. The minimum instantaneous voltage required at OUT- is 0.7V for modulation currents up to 60mA and 0.75V for currents from 60mA to 85mA. Operat ...
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS
... These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in a degradation of the dev ...
... These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in a degradation of the dev ...
... really current-mode element whose input and output signals are currents. It should also be noted here that, the CDTA offers wider frequency bandwidth advantages as compared to its close relative, the CDBA [6]. In addition, it can also adjust the output current gain. However, from our investigations, ...
AAT3688 数据资料DataSheet下载
... Before the start of charging, the AAT3688 checks several conditions in order to assure a safe charging environment. The input supply must be above the minimum operating voltage, or under-voltage lockout threshold (VUVLO), for the charging sequence to begin. In addition, the cell temperature, as repo ...
... Before the start of charging, the AAT3688 checks several conditions in order to assure a safe charging environment. The input supply must be above the minimum operating voltage, or under-voltage lockout threshold (VUVLO), for the charging sequence to begin. In addition, the cell temperature, as repo ...
UM0620
... To respect the USB high power specifications, the total current taken from the USB connector can be a maximum of 500 mA. Designating 100 mA to the microcontroller and other circuitry (to comply with USB power specifications), 400 mA can be used for the ...
... To respect the USB high power specifications, the total current taken from the USB connector can be a maximum of 500 mA. Designating 100 mA to the microcontroller and other circuitry (to comply with USB power specifications), 400 mA can be used for the ...
HIGH-SPEED FULLY DIFFERENTIAL I/O AMPLIFIERS THS4120 THS4121 FEATURES
... Fully differential amplifiers can operate with a single supply. VOCM defaults to the midrail voltage, VDD/2. The differential output may be fed into a data converter. This method eliminates the use of a transformer in the circuit. If the ADC has a reference voltage output (Vref), then it is recommen ...
... Fully differential amplifiers can operate with a single supply. VOCM defaults to the midrail voltage, VDD/2. The differential output may be fed into a data converter. This method eliminates the use of a transformer in the circuit. If the ADC has a reference voltage output (Vref), then it is recommen ...
2.2.3 Astable Circuits Word Document
... The Schmitt NOT gate solution is a very simple, neat and reliable solution if a simple clock, or pulse generator is required. However if you want to have a different ‘on’ and ‘off’ time then this simple circuit cannot perform this action, and we need to consider a more complex solution. The second m ...
... The Schmitt NOT gate solution is a very simple, neat and reliable solution if a simple clock, or pulse generator is required. However if you want to have a different ‘on’ and ‘off’ time then this simple circuit cannot perform this action, and we need to consider a more complex solution. The second m ...
74LCX125 Low Voltage Quad Buffer with 5V Tolerant Inputs and Outputs
... Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditi ...
... Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditi ...
Chapter 12
... Energy is stored by the capacitor during a portion of the ac cycle and returned to the source during another portion of the cycle. Voltage and current are always 90o out of phase. For this reason, no true power is dissipated by a capacitor, because stored energy is returned to the circuit. The rate ...
... Energy is stored by the capacitor during a portion of the ac cycle and returned to the source during another portion of the cycle. Voltage and current are always 90o out of phase. For this reason, no true power is dissipated by a capacitor, because stored energy is returned to the circuit. The rate ...
A Low-Noise Self-Calibrating Dynamic Comparator for
... The proposed comparator uses the falling edge at the Di nodes for the latch timing of the second stage. M14 and M15 are used instead of M12’ and these gates are connected to the Di nodes. M14 and M15 behave not only pre-charge switches but also input transistors of the second latch stage. Therefore, ...
... The proposed comparator uses the falling edge at the Di nodes for the latch timing of the second stage. M14 and M15 are used instead of M12’ and these gates are connected to the Di nodes. M14 and M15 behave not only pre-charge switches but also input transistors of the second latch stage. Therefore, ...
Direct-Current Circuits
... connected across each other, they are said to be in parallel The potential difference across each resistor is the same because each is connected directly across the battery terminals The sum of the currents through the resistors is equal to the total current through the combination ...
... connected across each other, they are said to be in parallel The potential difference across each resistor is the same because each is connected directly across the battery terminals The sum of the currents through the resistors is equal to the total current through the combination ...
P84394
... Use care and proper techniques to position the field wires in the backbox so that they use minimum space and produce minimum stress on the product. This is especially important for stiff, heavy gauge wires and wires with thick insulation or sheathing. This RSS model has an integrated Strobe Mounting ...
... Use care and proper techniques to position the field wires in the backbox so that they use minimum space and produce minimum stress on the product. This is especially important for stiff, heavy gauge wires and wires with thick insulation or sheathing. This RSS model has an integrated Strobe Mounting ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.