EXPERIMENT 11: Uni-junction transistor (UJT) CHARACTERISTICS
... The UJT is biased with a positive voltage between the two bases. This causes a potential drop along the length of the device. When the emitter voltage is driven approximately one diode voltage above the voltage at the point where the P diffusion (emitter) is, current will begin to flow from the emit ...
... The UJT is biased with a positive voltage between the two bases. This causes a potential drop along the length of the device. When the emitter voltage is driven approximately one diode voltage above the voltage at the point where the P diffusion (emitter) is, current will begin to flow from the emit ...
STK4050II AF Power Amplifier (Split Power Supply) (200W
... Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ...
... Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ...
Activity 6A
... gate signal. However, it can be turned off by a negative gate signal. A GTO is a latching device and can be built with current and voltage ratings similar to those of an SCR. A GTO is turned on by applying a short positive pulse and turned off by a short negative pulse to its gate. The GTOs have adv ...
... gate signal. However, it can be turned off by a negative gate signal. A GTO is a latching device and can be built with current and voltage ratings similar to those of an SCR. A GTO is turned on by applying a short positive pulse and turned off by a short negative pulse to its gate. The GTOs have adv ...
plans - Warren Mar
... To get the DC voltage to power the LM4780 chip, we need to convert the 120 VAC 60 Hz building supply into ±40 V by using a AC to DC converter composed of a center tapped transformer with some rectifying diodes and a voltage regulator. The transformer turns the 120 V to 40 V. The rectifying diodes, c ...
... To get the DC voltage to power the LM4780 chip, we need to convert the 120 VAC 60 Hz building supply into ±40 V by using a AC to DC converter composed of a center tapped transformer with some rectifying diodes and a voltage regulator. The transformer turns the 120 V to 40 V. The rectifying diodes, c ...
Physics Sample Paper for Engg Entrance Exam 1
... a) 110 C/S b) 50 C/S c) 60 C/S d) 120 C/S 14.A transformer works on a) DC only b) AC only c) both AC and DC d) high voltage only 15.Alternating voltage a) is independent of time b) varies directly with time c) varies inversely with time d) varies sinusoidaly with time 16.The law of electromagnetic i ...
... a) 110 C/S b) 50 C/S c) 60 C/S d) 120 C/S 14.A transformer works on a) DC only b) AC only c) both AC and DC d) high voltage only 15.Alternating voltage a) is independent of time b) varies directly with time c) varies inversely with time d) varies sinusoidaly with time 16.The law of electromagnetic i ...
Transformer Equivalent Circuit -- Lab Review Sheet
... The short circuit test gives R1, X1, R2 and X2. This test is performed by applying rated current to the high voltage side and shorting the low voltage side. The high voltage side corresponds to the low current side, applying the test current to the low current side is done for safety reasons. With t ...
... The short circuit test gives R1, X1, R2 and X2. This test is performed by applying rated current to the high voltage side and shorting the low voltage side. The high voltage side corresponds to the low current side, applying the test current to the low current side is done for safety reasons. With t ...
Internal Resistance and Resistivity in DC Circuits
... Resistivity All wires in a circuit also contribute to the overall resistance in a circuit. Even though the value is often small and negligible, it is often important to determine the value for the resistance of a wire if it is thick or long. This being said, the resistance is dependant on the geome ...
... Resistivity All wires in a circuit also contribute to the overall resistance in a circuit. Even though the value is often small and negligible, it is often important to determine the value for the resistance of a wire if it is thick or long. This being said, the resistance is dependant on the geome ...
CIRCUIT FUNCTION AND BENEFITS CIRCUIT DESCRIPTION
... source, and the AD7794 is a high resolution Σ-Δ ADC with two integrated current sources. For high currents, external MOSFETs or transistors will generally be required. ...
... source, and the AD7794 is a high resolution Σ-Δ ADC with two integrated current sources. For high currents, external MOSFETs or transistors will generally be required. ...
High current MOSFET driver
... special features are implemented): but in that case the output voltage is already at the same voltage (~10 V) and the load (CPU in most cases) already burnt. L6743D by-pass the PWM controller by latching on the low-side MOSFET in case the PHASE pin voltage overcome 2 V during the HiZ state. When the ...
... special features are implemented): but in that case the output voltage is already at the same voltage (~10 V) and the load (CPU in most cases) already burnt. L6743D by-pass the PWM controller by latching on the low-side MOSFET in case the PHASE pin voltage overcome 2 V during the HiZ state. When the ...
Test Procedure for the LV56801PGEVB Evaluation Board SANYO Semiconductors
... Refer to Fig1, In initial setting, “CTRL1”, “CTRL2” pins are shorted GND, and EXT, ANT, AUDIO, CD and ILM are low potential. ...
... Refer to Fig1, In initial setting, “CTRL1”, “CTRL2” pins are shorted GND, and EXT, ANT, AUDIO, CD and ILM are low potential. ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.