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A022e-External Current Limiting Circuit

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Chapter 3 Simple Resistive Circuits
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... The DC Operating Point Recall that the collector characteristic curves graphically show the relationship of collector current and VCE for different base currents. With the dc load line superimposed across the collector curves for this particular transistor we see that 30 mA of collector current is ...
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... Notes: 1) Only in refOUT mode or with external REF less than 2.525 V and greater than 2.475 V. For external REF out of these limits see leaflet. 2) VOUT is linked to VREF, by conception the difference between these two nodes for IP = 0 is maximum ± 25 mV, 2.475 V < VOUT < 2.525 V. 3) In Re ...
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... ability to move an electric charge from one point to another. ...
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< 1 ... 1174 1175 1176 1177 1178 1179 1180 1181 1182 ... 1285 >

Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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