FT245BM Designers Guide
... A P-Channel Logic Level MOSFET is used as a power switch to control the power to the auxiliary devices – in this example we use a International Rectifier part number IRLML6402. R7 and C8 form a “soft start” circuit which limits the current surge when the MOSFET turns on. Without this, there is a dan ...
... A P-Channel Logic Level MOSFET is used as a power switch to control the power to the auxiliary devices – in this example we use a International Rectifier part number IRLML6402. R7 and C8 form a “soft start” circuit which limits the current surge when the MOSFET turns on. Without this, there is a dan ...
ZXT13P40DE6 Features Mechanical Data
... Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: ...
... Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: ...
Series and Parallel Circuits
... different runs down the hill available to them. The route down the hill is a complex circuit of series and parallel runs, taking skiers back to the bottom of the lift. Figure 13.15 ...
... different runs down the hill available to them. The route down the hill is a complex circuit of series and parallel runs, taking skiers back to the bottom of the lift. Figure 13.15 ...
FMMT591A Features Mechanical Data
... Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range ...
... Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range ...
BD00IA5MEFJ-M
... diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the ...
... diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the ...
Chapter 23 Text
... Three students are connecting two identical lamps to a battery, as illustrated in Figure 23-2. Before they make the final connection to the battery, their teacher asks them to predict the brightnesses of the two lamps. Each student knows that the brightness of a lamp depends on the current through i ...
... Three students are connecting two identical lamps to a battery, as illustrated in Figure 23-2. Before they make the final connection to the battery, their teacher asks them to predict the brightnesses of the two lamps. Each student knows that the brightness of a lamp depends on the current through i ...
TCA 305 TCA 355 Proximity Switch
... Operation at voltages less than 5 V (between approx. 2.5 and 5 V) is possible, if VREF is connected to VS. In this case VREF is no longer internally stabilized. Additionally, the pin "turn-on delay" is to be applied as follows: If no turn-on delay is needed, this pin has to be connected to VS. If, h ...
... Operation at voltages less than 5 V (between approx. 2.5 and 5 V) is possible, if VREF is connected to VS. In this case VREF is no longer internally stabilized. Additionally, the pin "turn-on delay" is to be applied as follows: If no turn-on delay is needed, this pin has to be connected to VS. If, h ...
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... † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to ...
... † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to ...
An Si–SiGe BiCMOS Direct-Conversion Mixer With Second-Order and Third-Order Nonlinearity
... choice of source harmonic termination. In Section II, we directly compute the nonlinear response of a differential CE circuit. The direct nonlinear response is solved, then a relatively straightforward expression for third-order nonlinearity cancellation is given. The use of direct-conversion techni ...
... choice of source harmonic termination. In Section II, we directly compute the nonlinear response of a differential CE circuit. The direct nonlinear response is solved, then a relatively straightforward expression for third-order nonlinearity cancellation is given. The use of direct-conversion techni ...
HMC727LC3C 数据资料DataSheet下载
... All differential inputs to the HMC727LC3C are CML and terminated on-chip with 50 Ohms to the positive supply, GND, and may be DC or AC coupled. The differential CMl outputs are source terminated to to 50 Ohms and may also be AC or DC coupled. Outputs can be connected directly to a 50 Ohm ground-term ...
... All differential inputs to the HMC727LC3C are CML and terminated on-chip with 50 Ohms to the positive supply, GND, and may be DC or AC coupled. The differential CMl outputs are source terminated to to 50 Ohms and may also be AC or DC coupled. Outputs can be connected directly to a 50 Ohm ground-term ...
CHAPTER 3 Sensors
... The industry-standard AD598 LVDT signal conditioner shown in Figure 3.4 (simplified form) performs all required LVDT signal processing. The on-chip excitation frequency oscillator can be set from 20 Hz to 20 kHz with a single external capacitor. Two absolute value circuits followed by two filters ar ...
... The industry-standard AD598 LVDT signal conditioner shown in Figure 3.4 (simplified form) performs all required LVDT signal processing. The on-chip excitation frequency oscillator can be set from 20 Hz to 20 kHz with a single external capacitor. Two absolute value circuits followed by two filters ar ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.