Technical application guide
... for certification in accordance with VDE 0710-14 and DIN VDE 0100-559. The devices carry the MM mark. ...
... for certification in accordance with VDE 0710-14 and DIN VDE 0100-559. The devices carry the MM mark. ...
Silicon-on-insulator
... Solution: In fully depleted SOI substrates the silicon film thickness determines the threshold voltage. FD SOI allows significantly lower supply voltages and/or significantly higher Clk–speeds at a given supply voltage. ...
... Solution: In fully depleted SOI substrates the silicon film thickness determines the threshold voltage. FD SOI allows significantly lower supply voltages and/or significantly higher Clk–speeds at a given supply voltage. ...
Lampiran A Rangkaian Modem PSK 1200 Bps
... 1. This input current will only exist when the voltage at any of the input leads is driven negative. This current is due to the collector base junction of the input p-n-p transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lat ...
... 1. This input current will only exist when the voltage at any of the input leads is driven negative. This current is due to the collector base junction of the input p-n-p transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lat ...
LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier
... the MS package to about 130°C/W by connecting the used leads to a larger metal area. A substantial reduction in thermal resistance down to about 50°C/W can be achieved by connecting the Exposed Pad on the bottom of the DD package to a large PC board metal area which is either open-circuited or conne ...
... the MS package to about 130°C/W by connecting the used leads to a larger metal area. A substantial reduction in thermal resistance down to about 50°C/W can be achieved by connecting the Exposed Pad on the bottom of the DD package to a large PC board metal area which is either open-circuited or conne ...
74AVCH1T45 1. General description Dual-supply voltage level translator/transceiver; 3-state
... translation. It features two 1-bit input-output ports (A and B), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0. ...
... translation. It features two 1-bit input-output ports (A and B), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0. ...
ADVAC Model 03 Medium Voltage Vacuum Power Circuit
... ADVAC™ circuit breakers are equipped with high energy/high speed mechanisms. The design includes several interlocks and safety features which help ensure safe and proper operating sequences. To ensure safety of personnel associated with installation, operation and maintenance of these breakers, the ...
... ADVAC™ circuit breakers are equipped with high energy/high speed mechanisms. The design includes several interlocks and safety features which help ensure safe and proper operating sequences. To ensure safety of personnel associated with installation, operation and maintenance of these breakers, the ...
ADM8616 数据手册DataSheet 下载
... effective coding scheme for detecting this error involves using a slightly longer watchdog timeout. In the program that calls the subroutine, WDI is set high. The subroutine sets WDI low when it is called. If the program executes without error, WDI is toggled high and low with every loop of the prog ...
... effective coding scheme for detecting this error involves using a slightly longer watchdog timeout. In the program that calls the subroutine, WDI is set high. The subroutine sets WDI low when it is called. If the program executes without error, WDI is toggled high and low with every loop of the prog ...
COMe-cBTi6R
... the COM Express® specification. This standardization allows designers to create a single-system baseboard that can accept present and future COM Express® modules. The baseboard designer can optimize exactly how each of these functions implements physically. Designers can place connectors precisely w ...
... the COM Express® specification. This standardization allows designers to create a single-system baseboard that can accept present and future COM Express® modules. The baseboard designer can optimize exactly how each of these functions implements physically. Designers can place connectors precisely w ...
NC7SP57 • NC7SP58 TinyLogic ULP Universal Configurable 2-Input Logic Gates
... Device functionality is selected by how the device is wired at the board level. Figure 1 through Figure 10 illustrate how to connect the NC7SP57 and NC7SP58 respectively for the desired logic function. All inputs have been implemented with hysteresis. The internal circuit is composed of a minimum of ...
... Device functionality is selected by how the device is wired at the board level. Figure 1 through Figure 10 illustrate how to connect the NC7SP57 and NC7SP58 respectively for the desired logic function. All inputs have been implemented with hysteresis. The internal circuit is composed of a minimum of ...
UJA1079A 1. General description LIN core system basis chip
... Delivers up to 250 mA and can be combined with an external PNP transistor for better heat distribution over the PCB Selectable current threshold at which the external PNP transistor starts to deliver current Undervoltage warning at 90 % of nominal output voltage and undervoltage reset at 90 % ...
... Delivers up to 250 mA and can be combined with an external PNP transistor for better heat distribution over the PCB Selectable current threshold at which the external PNP transistor starts to deliver current Undervoltage warning at 90 % of nominal output voltage and undervoltage reset at 90 % ...
Process Variation Aware DRAM (Dynamic Random Access Memory
... Access Memory) caches has received significant attention in the research community [2–7], very little work exists in DRAM variation. This is due to the fact that DRAMs were traditionally placed off-chip and their latency changes due to process variation did not have a significant impact on the overa ...
... Access Memory) caches has received significant attention in the research community [2–7], very little work exists in DRAM variation. This is due to the fact that DRAMs were traditionally placed off-chip and their latency changes due to process variation did not have a significant impact on the overa ...
3.3- Modeling the Diode Forward Characteristic
... Make sure you analyze the resulting circuit precisely as we did in section 3.1. You assume the same IDEAL diode modes, you enforce the same IDEAL diode values, and you check the same IDEAL diode results, precisely as before. Once we replace the junction diodes with the CVD model, we have an IDEAL di ...
... Make sure you analyze the resulting circuit precisely as we did in section 3.1. You assume the same IDEAL diode modes, you enforce the same IDEAL diode values, and you check the same IDEAL diode results, precisely as before. Once we replace the junction diodes with the CVD model, we have an IDEAL di ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.