MAX1705/MAX1706 1- to 3-Cell, High-Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator
... The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in battery-powered wireless applications. They use a synchronous rectifier pulse-width-modulation (PWM) boost topology to generate 2.5V to 5.5V ou ...
... The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in battery-powered wireless applications. They use a synchronous rectifier pulse-width-modulation (PWM) boost topology to generate 2.5V to 5.5V ou ...
Compact Ion-source Based on Superionic Rubidium Silver Iodide
... in which I have been involved. This thesis could not have been completed without his guidance and help. Professor Orlando for his constant interest, support and encouragement. Professor Moutinho, Nenad Bundaleski, João and all the members at the Surface Analysis Group, CEFITEC (Centre of Physics and ...
... in which I have been involved. This thesis could not have been completed without his guidance and help. Professor Orlando for his constant interest, support and encouragement. Professor Moutinho, Nenad Bundaleski, João and all the members at the Surface Analysis Group, CEFITEC (Centre of Physics and ...
LTM8008 - 72VIN, 6 Output DC/DC SEPIC uModule Regulator
... Applications Information In an actual application, most of the INTVCC supply current is used to drive the gate capacitance of the power MOSFET. The power dissipation can be a significant concern when the internal MOSFET is being driven at a high frequency and the VIN voltage is high. It is important ...
... Applications Information In an actual application, most of the INTVCC supply current is used to drive the gate capacitance of the power MOSFET. The power dissipation can be a significant concern when the internal MOSFET is being driven at a high frequency and the VIN voltage is high. It is important ...
Schottky Diode Working and Applications
... Schottky Diode Working and Applications V-I Characteristics Of Schottky Barrier Diode The forward voltage drop of the Schottky barrier diode is very low compared to a normal PN junction diode. The forward voltage drop ranges from 0.3 volts to 0.5 volts. The forward voltage drop of Schottky ba ...
... Schottky Diode Working and Applications V-I Characteristics Of Schottky Barrier Diode The forward voltage drop of the Schottky barrier diode is very low compared to a normal PN junction diode. The forward voltage drop ranges from 0.3 volts to 0.5 volts. The forward voltage drop of Schottky ba ...
Phosphates as Lithium-Ion Battery Cathodes: An Evaluation
... Duplicate crystal structures were identified and removed using an affine mapping technique. Two structures are considered equivalent if an affine mapping exists transforming one into another within reasonable tolerances.32 The algorithm used to perform this comparison was based on Hundt et al.33 This alg ...
... Duplicate crystal structures were identified and removed using an affine mapping technique. Two structures are considered equivalent if an affine mapping exists transforming one into another within reasonable tolerances.32 The algorithm used to perform this comparison was based on Hundt et al.33 This alg ...
MAX14781E Half-Duplex RS-485 Transceiver with Polarity Correction General Description
... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
www.rsc.org/nanoscale Volume 5 | Number 16 | 21 August 2013
... A large area and high density vertically aligned ZnO wire array can be obtained on phlogopite mica, as revealed from scanning electron microscopy (SEM) observations (Fig. 1a and b) on the sample synthesized in a glass reagent bottle. The top view SEM image (Fig. 1c) shows an in-plane alignment of th ...
... A large area and high density vertically aligned ZnO wire array can be obtained on phlogopite mica, as revealed from scanning electron microscopy (SEM) observations (Fig. 1a and b) on the sample synthesized in a glass reagent bottle. The top view SEM image (Fig. 1c) shows an in-plane alignment of th ...
datasheet - Texas Instruments
... board (PCB) layout without the need of external resistors or feed-forward capacitors, thus reducing overall component count. The TPS7A4701 output voltage can be configured with a user-programmable PCB layout (up to 20.5 V), or adjustable (up to 34 V) with external feedback resistors. The TPS7A47 is ...
... board (PCB) layout without the need of external resistors or feed-forward capacitors, thus reducing overall component count. The TPS7A4701 output voltage can be configured with a user-programmable PCB layout (up to 20.5 V), or adjustable (up to 34 V) with external feedback resistors. The TPS7A47 is ...
RT8205L/M
... DC ---------------------------------------------------------------------------------------------------------------< 20ns ----------------------------------------------------------------------------------------------------------z Power Dissipation, PD @ TA = 25°C WQFN-24L-4x4 ------------------------ ...
... DC ---------------------------------------------------------------------------------------------------------------< 20ns ----------------------------------------------------------------------------------------------------------z Power Dissipation, PD @ TA = 25°C WQFN-24L-4x4 ------------------------ ...
LT1764A - 3A, Fast Transient Response, Low Noise, LDO Regulators
... 2.42V. The external resistor divider will add a 300µA DC load on the output. Note 6: Dropout voltage is the minimum input to output voltage differential needed to maintain regulation at a specified output current. In dropout, the output voltage will be equal to: VIN – VDROPOUT. Note 7: GND pin curre ...
... 2.42V. The external resistor divider will add a 300µA DC load on the output. Note 6: Dropout voltage is the minimum input to output voltage differential needed to maintain regulation at a specified output current. In dropout, the output voltage will be equal to: VIN – VDROPOUT. Note 7: GND pin curre ...
Microstructured organic ferroelectric thin film capacitors by solution micromolding
... storage applications, i.e. non-volatile memory elements that retain their data when the power is turned off, and that furthermore can be read, programmed and erased electrically. The low processing temperature allows device fabrication on foils, thereby enabling flexible electronics. The most common ...
... storage applications, i.e. non-volatile memory elements that retain their data when the power is turned off, and that furthermore can be read, programmed and erased electrically. The low processing temperature allows device fabrication on foils, thereby enabling flexible electronics. The most common ...
LT1764A - 3A, Fast Transient Response, Low
... 2.42V. The external resistor divider will add a 300µA DC load on the output. Note 6: Dropout voltage is the minimum input to output voltage differential needed to maintain regulation at a specified output current. In dropout, the output voltage will be equal to: VIN – VDROPOUT. Note 7: GND pin curre ...
... 2.42V. The external resistor divider will add a 300µA DC load on the output. Note 6: Dropout voltage is the minimum input to output voltage differential needed to maintain regulation at a specified output current. In dropout, the output voltage will be equal to: VIN – VDROPOUT. Note 7: GND pin curre ...
The Electro-Thermal Properties of Integrated Circuit Microbolometers
... Thermal sensors based on CMOS technology became feasible when CMOS micromachining was established. Micromachining makes it possible to remove thermally conducting material for the thermal isolation of heated microstructures. While thermal effects are intuitively considered to be slow, the small size ...
... Thermal sensors based on CMOS technology became feasible when CMOS micromachining was established. Micromachining makes it possible to remove thermally conducting material for the thermal isolation of heated microstructures. While thermal effects are intuitively considered to be slow, the small size ...
TPS77033 数据资料 dataSheet 下载
... The TPS770xx uses a PMOS pass element to dramatically reduce both dropout voltage and supply current over more conventional PNP-pass-element LDO designs. The PMOS pass element is a voltage-controlled device and, unlike a PNP transistor, it does not require increased drive current as output current i ...
... The TPS770xx uses a PMOS pass element to dramatically reduce both dropout voltage and supply current over more conventional PNP-pass-element LDO designs. The PMOS pass element is a voltage-controlled device and, unlike a PNP transistor, it does not require increased drive current as output current i ...
MAX5902/MAX5903 +72V, SOT23/TDFN, Simple Swapper Hot-Swap Controllers General Description
... protection. During startup the circuit-breaker function is disabled and the MAX5902/MAX5903 limit the inrush current by gradually turning on the external MOSFET. Once the external MOSFET is fully enhanced, the circuit-breaker function is enabled and the MAX5902/MAX5903 provide overcurrent protection ...
... protection. During startup the circuit-breaker function is disabled and the MAX5902/MAX5903 limit the inrush current by gradually turning on the external MOSFET. Once the external MOSFET is fully enhanced, the circuit-breaker function is enabled and the MAX5902/MAX5903 provide overcurrent protection ...
Ferroelectric Ceramics - Universiti Sains Malaysia
... usually have very high dielectric constants. The fact that the internal electric dipoles can be forced to change their direction by the application of an external voltage gives rise to hysteresis in the "polarization vs voltage" property of the capacitor. Polarization is defined as the total charge ...
... usually have very high dielectric constants. The fact that the internal electric dipoles can be forced to change their direction by the application of an external voltage gives rise to hysteresis in the "polarization vs voltage" property of the capacitor. Polarization is defined as the total charge ...
chapter 3—electricity
... a. the opposition to the flow of electrons b. the opposition to the generation of electromotive force c. the location of storage of electrons d. measured in amperes ANS: A ...
... a. the opposition to the flow of electrons b. the opposition to the generation of electromotive force c. the location of storage of electrons d. measured in amperes ANS: A ...
Mehedi Hasan Tusher
... DC –DC converters are power electronic circuits that convert a dc voltage to a different voltage level. There are different types of conversion method such as electronic, linear, switched mode, magnetic, capacitive. The circuits described in this report are classified as switched mode DC-DC converte ...
... DC –DC converters are power electronic circuits that convert a dc voltage to a different voltage level. There are different types of conversion method such as electronic, linear, switched mode, magnetic, capacitive. The circuits described in this report are classified as switched mode DC-DC converte ...
Nanogenerator
Nanogenerator is a technology that converts mechanical/thermal energy as produced by small-scale physical change into electricity. Nanogenerator has three typical approaches: piezoelectric, triboelectric, and pyroelectric nanogenerators. Both the piezoelectric and triboelectric nanogenerators can convert the mechanical energy into electricity. However, the pyroelectric nanogenerators can be used to harvest thermal energy from a time-dependent temperature fluctuation.